Alessandro Brugnoni;Kyle Bottrill;Valerio Vitali;A. Emre Kaplan;Michele Re;Cosimo Lacava;Periklis Petropoulos;Ilaria Cristiani
{"title":"通过集成氮化硅频率锁定器灵活生成稳定的光学载波次 THz 跳变音符","authors":"Alessandro Brugnoni;Kyle Bottrill;Valerio Vitali;A. Emre Kaplan;Michele Re;Cosimo Lacava;Periklis Petropoulos;Ilaria Cristiani","doi":"10.1109/LPT.2024.3428867","DOIUrl":null,"url":null,"abstract":"A promising technique to generate on-chip THz signals relies on the synthesis of a tone out of heterodyne interference of two frequency-spaced semiconductor lasers. Still the thermal cross-talk deriving from the integration of multiple sub-THz signals may be detrimental on the long-term scale, strongly affecting the working frequencies of the circuit. In this letter, a flexible generation of a beat note at a multiple of 50 GHz and its stabilisation in the frequency domain through an integrated silicon nitride high Q resonator-based locker are reported. As a field-test, two generated beat note signals at 100 and 150 GHz, respectively, were launched into a 183.8 km long dark fibre network. To evaluate the frequency locker system robustness, an external frequency drift of -125 MHz/hour that mimicked a thermal drift (~2°C/hour) was applied to one laser. The integrated apparatus allows the stabilisation of the generated frequency tone, with a maximum variation of \n<inline-formula> <tex-math>$\\pm ~30$ </tex-math></inline-formula>\n MHz around the nominal value. In principle, the adopted free-dispersion design of the SiN waveguide makes possible to place two spectral lines far enough to generate thermally stable THz-waves.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible Generation of Optically-Carried Sub-THz Beat Notes Stabilized Through an Integrated SiN Frequency Locker\",\"authors\":\"Alessandro Brugnoni;Kyle Bottrill;Valerio Vitali;A. Emre Kaplan;Michele Re;Cosimo Lacava;Periklis Petropoulos;Ilaria Cristiani\",\"doi\":\"10.1109/LPT.2024.3428867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A promising technique to generate on-chip THz signals relies on the synthesis of a tone out of heterodyne interference of two frequency-spaced semiconductor lasers. Still the thermal cross-talk deriving from the integration of multiple sub-THz signals may be detrimental on the long-term scale, strongly affecting the working frequencies of the circuit. In this letter, a flexible generation of a beat note at a multiple of 50 GHz and its stabilisation in the frequency domain through an integrated silicon nitride high Q resonator-based locker are reported. As a field-test, two generated beat note signals at 100 and 150 GHz, respectively, were launched into a 183.8 km long dark fibre network. To evaluate the frequency locker system robustness, an external frequency drift of -125 MHz/hour that mimicked a thermal drift (~2°C/hour) was applied to one laser. The integrated apparatus allows the stabilisation of the generated frequency tone, with a maximum variation of \\n<inline-formula> <tex-math>$\\\\pm ~30$ </tex-math></inline-formula>\\n MHz around the nominal value. In principle, the adopted free-dispersion design of the SiN waveguide makes possible to place two spectral lines far enough to generate thermally stable THz-waves.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10599256/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10599256/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Flexible Generation of Optically-Carried Sub-THz Beat Notes Stabilized Through an Integrated SiN Frequency Locker
A promising technique to generate on-chip THz signals relies on the synthesis of a tone out of heterodyne interference of two frequency-spaced semiconductor lasers. Still the thermal cross-talk deriving from the integration of multiple sub-THz signals may be detrimental on the long-term scale, strongly affecting the working frequencies of the circuit. In this letter, a flexible generation of a beat note at a multiple of 50 GHz and its stabilisation in the frequency domain through an integrated silicon nitride high Q resonator-based locker are reported. As a field-test, two generated beat note signals at 100 and 150 GHz, respectively, were launched into a 183.8 km long dark fibre network. To evaluate the frequency locker system robustness, an external frequency drift of -125 MHz/hour that mimicked a thermal drift (~2°C/hour) was applied to one laser. The integrated apparatus allows the stabilisation of the generated frequency tone, with a maximum variation of
$\pm ~30$
MHz around the nominal value. In principle, the adopted free-dispersion design of the SiN waveguide makes possible to place two spectral lines far enough to generate thermally stable THz-waves.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.