Pub Date : 2026-03-04DOI: 10.1109/LPT.2026.3670303
Yong Zhao;Yuechun Shi;Yuxuan Chen;Jiaqiang Nie
Fano-resonant photonic molecules hold great promise for ultra-compact optical filtering and sensing, yet their performance is usually limited by the free-spectral-range (FSR) of the resonators. In this letter, we demonstrate an FSR-free Fano resonance realized in a silicon-on-insulator photonic molecule comprising a bus waveguide side-coupled to two bent, $pi $ -phase-shifted sidewall Bragg-grating (BG) cavities. Rigorous coupled-mode theory analysis reveals that the interference between the two gratings generates a single, sharp asymmetric line shape whose slope rate (SR) and extinction ratio (ER) are governed by the bus waveguide width. On the silicon-on-insulator (SOI) platform, we experimentally demonstrate a fabricated device exhibiting an extinction ratio (ER) of 37 dB, an average slope rate (SR) of 162 dB/nm, and an FSR-free response. The proposed structure is expected to find wide applications in optical filtering and sensing that demand single-resonance operation over a broad spectral window.
{"title":"FSR-Free Fano Resonance in a Photonic Molecule With Dual Side-Coupled Phase-Shifted Bragg Gratings","authors":"Yong Zhao;Yuechun Shi;Yuxuan Chen;Jiaqiang Nie","doi":"10.1109/LPT.2026.3670303","DOIUrl":"https://doi.org/10.1109/LPT.2026.3670303","url":null,"abstract":"Fano-resonant photonic molecules hold great promise for ultra-compact optical filtering and sensing, yet their performance is usually limited by the free-spectral-range (FSR) of the resonators. In this letter, we demonstrate an FSR-free Fano resonance realized in a silicon-on-insulator photonic molecule comprising a bus waveguide side-coupled to two bent, <inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-phase-shifted sidewall Bragg-grating (BG) cavities. Rigorous coupled-mode theory analysis reveals that the interference between the two gratings generates a single, sharp asymmetric line shape whose slope rate (SR) and extinction ratio (ER) are governed by the bus waveguide width. On the silicon-on-insulator (SOI) platform, we experimentally demonstrate a fabricated device exhibiting an extinction ratio (ER) of 37 dB, an average slope rate (SR) of 162 dB/nm, and an FSR-free response. The proposed structure is expected to find wide applications in optical filtering and sensing that demand single-resonance operation over a broad spectral window.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 11","pages":"779-782"},"PeriodicalIF":2.5,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}