In this work, we present the highly temperature-stable 850-nm oxide-aperture vertical cavity surface-emitting lasers with via-hole device structure. The temperature dependence of static and dynamic characteristics of devices are investigated. The output power of 7.13 mW saturating at high thermal rollover current of 12.5 mA at $29~^{circ }$ C and only 2.7 GHz 3-dB optical bandwidth drop over the temperature range from 29 to $85~^{circ }$ C is observed for the VCSEL with a $sim ~4.6~mu $ m oxide-aperture diameter. The thermal resistance of the VCSELs and the internal device temperature are analysed by using the measured optical spectra. The results clearly indicate that the high temperature stability of our devices can be attributed to both improved thermal conductivity benefited from via-hole device structure and optimized quantum well gain-to-etalon wavelength offset.
{"title":"High Temperature Stable 850-nm VCSELs With Improved Device Thermal Conductivity","authors":"Yun Sun;Wenjing Jiang;Meng Xun;Guanzhong Pan;Bingxin Yao;Runze Zhang;Weichao Wu;Dexin Wu","doi":"10.1109/LPT.2025.3637572","DOIUrl":"https://doi.org/10.1109/LPT.2025.3637572","url":null,"abstract":"In this work, we present the highly temperature-stable 850-nm oxide-aperture vertical cavity surface-emitting lasers with via-hole device structure. The temperature dependence of static and dynamic characteristics of devices are investigated. The output power of 7.13 mW saturating at high thermal rollover current of 12.5 mA at <inline-formula> <tex-math>$29~^{circ }$ </tex-math></inline-formula>C and only 2.7 GHz 3-dB optical bandwidth drop over the temperature range from 29 to <inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>C is observed for the VCSEL with a <inline-formula> <tex-math>$sim ~4.6~mu $ </tex-math></inline-formula> m oxide-aperture diameter. The thermal resistance of the VCSELs and the internal device temperature are analysed by using the measured optical spectra. The results clearly indicate that the high temperature stability of our devices can be attributed to both improved thermal conductivity benefited from via-hole device structure and optimized quantum well gain-to-etalon wavelength offset.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"309-312"},"PeriodicalIF":2.5,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/LPT.2025.3636731
Chaoyu Lin;Junwei Hu;Hua Yang;Xiaoyan Yi;Jinmin Li;Liancheng Wang
Micro-LEDs is regarded as the next-generation revolutionary display technology due to its advantages such as long life, high efficiency, high brightness and high contrast. Yet its inherent Lambertian radiation characteristics and relatively broader emission spectrum result in low optical coupling efficiency and diffraction dispersion-related “rainbow” phenomenon when combined with a waveguide combiner in AR application. We have reported resonant cavity (RC) Micro-LEDs with a reduced divergence angle and narrow spectrum. This work further develops an optimized RC Micro-LEDs with a ITO shoulder, thus significantly improves the yield. Then RC Micro-LEDs with different die shape and size was systematically analyzed. Our work should advance the application of Micro-LED, especially for AR application.
{"title":"Effect of Die Shape and Size on Performance of GaN-Based Resonator Micro-LEDs","authors":"Chaoyu Lin;Junwei Hu;Hua Yang;Xiaoyan Yi;Jinmin Li;Liancheng Wang","doi":"10.1109/LPT.2025.3636731","DOIUrl":"https://doi.org/10.1109/LPT.2025.3636731","url":null,"abstract":"Micro-LEDs is regarded as the next-generation revolutionary display technology due to its advantages such as long life, high efficiency, high brightness and high contrast. Yet its inherent Lambertian radiation characteristics and relatively broader emission spectrum result in low optical coupling efficiency and diffraction dispersion-related “rainbow” phenomenon when combined with a waveguide combiner in AR application. We have reported resonant cavity (RC) Micro-LEDs with a reduced divergence angle and narrow spectrum. This work further develops an optimized RC Micro-LEDs with a ITO shoulder, thus significantly improves the yield. Then RC Micro-LEDs with different die shape and size was systematically analyzed. Our work should advance the application of Micro-LED, especially for AR application.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"38 5","pages":"305-308"},"PeriodicalIF":2.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145712558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：