最新碲化镉太阳能电池的性能：发生了什么变化？

IF 2.5 3区工程技术 Q3 ENERGY & FUELS IEEE Journal of Photovoltaics Pub Date : 2024-07-15 DOI:10.1109/JPHOTOV.2024.3422651

Ishwor Khatri;Camden Kasik;James R. Sites

{"title":"最新碲化镉太阳能电池的性能：发生了什么变化？","authors":"Ishwor Khatri;Camden Kasik;James R. Sites","doi":"10.1109/JPHOTOV.2024.3422651","DOIUrl":null,"url":null,"abstract":"The open-circuit voltage (\n<italic>V\nOC\n) of polycrystalline state-of-the-art, arsenic-doped CdSeTe/CdTe solar cells has reached 917 mV, and the record cell efficiency has been gradually increasing. However, there is a significant difference in performance between the current CdTe-based solar cells and single-crystal GaAs cells that have a comparable band gap. The largest contribution to this difference in performance is the voltage. Between 1993 and 2023, \n<italic>V\nOC\n of CdTe-based solar cells improved by ∼143 mV when an appropriate adjustment was made for the band gap. This value is still about ∼180 mV below the best GaAs cells. The potential for even higher CdTe efficiencies will likely require a combination of incorporation of front-contact improvements, optimization of thickness, selenium profile, doping, and grain-boundary passivation of the absorber, better passivation of the rear interface, and assurance of back-contact conductivity and band alignment.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 5","pages":"745-751"},"PeriodicalIF":2.5000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance of State-of-the-Art CdTe-Based Solar Cells: What Has Changed?\",\"authors\":\"Ishwor Khatri;Camden Kasik;James R. Sites\",\"doi\":\"10.1109/JPHOTOV.2024.3422651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The open-circuit voltage (\\n<italic>V\\nOC\\n) of polycrystalline state-of-the-art, arsenic-doped CdSeTe/CdTe solar cells has reached 917 mV, and the record cell efficiency has been gradually increasing. However, there is a significant difference in performance between the current CdTe-based solar cells and single-crystal GaAs cells that have a comparable band gap. The largest contribution to this difference in performance is the voltage. Between 1993 and 2023, \\n<italic>V\\nOC\\n of CdTe-based solar cells improved by ∼143 mV when an appropriate adjustment was made for the band gap. This value is still about ∼180 mV below the best GaAs cells. The potential for even higher CdTe efficiencies will likely require a combination of incorporation of front-contact improvements, optimization of thickness, selenium profile, doping, and grain-boundary passivation of the absorber, better passivation of the rear interface, and assurance of back-contact conductivity and band alignment.\",\"PeriodicalId\":445,\"journal\":{\"name\":\"IEEE Journal of Photovoltaics\",\"volume\":\"14 5\",\"pages\":\"745-751\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Photovoltaics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10599357/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10599357/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}

引用次数: 0

摘要

最先进的掺砷多晶碲化镉/碲化镉太阳能电池的开路电压（VOC）已达到 917 mV，电池效率也在逐步提高。然而，目前基于碲化镉的太阳能电池与具有可比带隙的单晶砷化镓电池在性能上存在显著差异。造成这种性能差异的最大原因是电压。从 1993 年到 2023 年，如果对带隙进行适当调整，碲化镉太阳能电池的 VOC 将提高 143 mV。这一数值仍比最好的砷化镓电池低约 180 mV。要想实现更高的碲化镉效率，可能需要结合以下措施：改进前接触；优化吸收体的厚度、硒剖面、掺杂和晶界钝化；更好地钝化后界面；以及确保后接触的导电性和带对齐。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Performance of State-of-the-Art CdTe-Based Solar Cells: What Has Changed?

The open-circuit voltage ( V _OC ) of polycrystalline state-of-the-art, arsenic-doped CdSeTe/CdTe solar cells has reached 917 mV, and the record cell efficiency has been gradually increasing. However, there is a significant difference in performance between the current CdTe-based solar cells and single-crystal GaAs cells that have a comparable band gap. The largest contribution to this difference in performance is the voltage. Between 1993 and 2023, V _OC of CdTe-based solar cells improved by ∼143 mV when an appropriate adjustment was made for the band gap. This value is still about ∼180 mV below the best GaAs cells. The potential for even higher CdTe efficiencies will likely require a combination of incorporation of front-contact improvements, optimization of thickness, selenium profile, doping, and grain-boundary passivation of the absorber, better passivation of the rear interface, and assurance of back-contact conductivity and band alignment.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

7.00

自引率

10.00%

发文量

206

期刊介绍： The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.

期刊最新文献

2024 Index IEEE Journal of Photovoltaics Vol. 14 Design and Development of a New Smart Portable I-V Tracer Table of Contents Front Cover TechRxiv: Share Your Preprint Research with the World!