通过微合金化调节机制实现锡铋基焊点的力学性能和微观结构演变

Xuefeng Wu, Zhuangzhuang Hou, Xiaochen Xie, Pengrong Lin, Yongjun Huo, Yong Wang, Xiuchen Zhao
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摘要

锡铋基焊料用于电子封装中的互连工艺。然而,对焊料综合性能的研究速度难以与集成电路先进制造技术的快速发展相匹配,导致无法为电子设备获得具有优异可靠性的互连结构。为了寻求更有效的改性方法,我们选择在 Sn58Bi-1Sb 合金中掺入 1.0 wt % 的 In 元素。在固溶强化和弥散分布的第二相强化的共同作用下,焊料的强度、微机械性能和抗蠕变性都得到了改善。此外,由于生成了 BiIn 金属间化合物(88.9 °C),In 元素的添加极大地改善了热性能和润湿性,焊料润湿反应的活化能降低到 247.36 J/mol。值得注意的是,In 元素的加入增加了 β-Sn 相的偏离量,降低了 β-Sn 相的 Schmid 因子值,从而显著提高了强度和微区抗蠕变性。在电流作用下,Sn58Bi-1Sb1In 焊料基体的 β-Sn 相中持续存在大量均匀的 Bi 粒子偏差和亚晶结构。在 Cu/Sn58Bi-1Sb1In/Cu 焊点中,许多 Bi 粒子在 β-Sn 相中交错分布。由于 β-Sn 相的电阻率小于 Bi 相的电阻率,通电过程可能会导致 β-Sn 相中某些位置的局部电流进一步增加,从而降低 β-Sn 相的电迁移电阻。通电后,具有优异电迁移电阻的双相孪晶结构开始退化。结果表明,In 元素的掺杂全面提高了 Sn58Bi-1Sb 焊料的性能。这为锡铋基焊料的合金改性设计开辟了新思路。
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Mechanical properties and microstructure evolution of Sn–Bi-based solder joints by microalloying regulation mechanism
Sn–Bi based solders are used in electronic packaging for interconnection processes. However, the rate of research on the comprehensive performance of solders is difficult to match the rapid development of advanced manufacturing of integrated circuits, resulting in the inability to obtain interconnect structures with excellent reliability for electronic devices. To demand a more effective modification method, we chose to dope 1.0 wt % In element in Sn58Bi–1Sb alloy. The strength, micromechanical properties and creep resistance of the solder were improved due to the combined effect of solid solution strengthening and diffusely distributed second phase strengthening. Furthermore, the addition of In element dramatically improved the thermal properties and wettability due to the generation of BiIn intermetallic compounds (88.9 °C) and the activation energy of the solder wettability reaction was reduced to 247.36 J/mol. Notably, the addition of In element increased the amount of β-Sn phase deviation and decreased the Schmid factor value of β-Sn phase, resulting in a significant increase in the strength and micro-zone creep resistance. Under the action of current, a large amount of uniform Bi particle deviations and sub-crystalline structures persist in the β-Sn phase of the Sn58Bi–1Sb1In solder matrix. In the Cu/Sn58Bi–1Sb1In/Cu joints, many Bi particles are staggered in the β-Sn phase. Since the resistivity of the β-Sn phase is smaller than that of the Bi phase, the energization process leads to a possible further increase of the local currents at certain locations in the β-Sn phase, which reduces the electromigration resistance of the β-Sn phase. After energization, the biphasic twin structure with excellent electromigration resistance starts to degrade. The results show that the doping of In element comprehensively improves the performance of Sn58Bi–1Sb solder. It opens up a new idea for the design of alloying modification of tin-bismuth based solder.
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