Lianping Hou;Bocheng Yuan;Yizhe Fan;Xiao Sun;Yiming Sun;Simeng Zhu;Stephen J. Sweeney;John H. Marsh
{"title":"基于侧壁光栅的单片双波长 DFB 激光器,用于 THz/MMW 信号生成","authors":"Lianping Hou;Bocheng Yuan;Yizhe Fan;Xiao Sun;Yiming Sun;Simeng Zhu;Stephen J. Sweeney;John H. Marsh","doi":"10.1109/JSTQE.2024.3427770","DOIUrl":null,"url":null,"abstract":"We have developed a series of dual-wavelength DFB lasers (DWLs) based on different sidewall grating designs. These include DWLs utilizing uniform Bragg gratings (UBG), conventional sampled Bragg gratings (C-SBG), two-phase shifted sampled Bragg gratings (2PS-SBG), and four-phase shifted sampled Bragg gratings (4PS-SBG) for THz signal generation. Additionally, we have explored the use of 4PS-SBG combined with equivalent chirp technology, lateral modulation of the grating coupling coefficient κ, and four-phase-shifted sampled Moiré gratings (4PS-SMG) for millimeter-wave (MMW) signal generation. All the DWLs were fabricated in the AlGaInAs/InP system operating around 1550 nm. For DWLs using UBG, even employing e-beam lithography at its resolution limit of 0.5 nm, the smallest frequency separation is constrained to approximately 400 GHz. C-SBG designs allow precise control of the frequency separation, down to 1.1 GHz, but the effective grating coupling coefficient is only 1/π of that of UBG. Utilizing 2PS-SBG technology can automatically produce DWLs while maintaining the same sampling periods on both sides of the ridge waveguide. The 4PS-SBG demonstrates a higher effective κ (approximately 0.9x that of UBG) compared to the 2PS-SBG (approximately 0.64x that of UBG). To ensure single longitudinal mode operation and mitigate longitudinal mode competition, an equivalent π phase shift (EPS) is inserted at 1/3 of the DFB cavity length on one side, and another EPS is placed at 2/3 of the DFB cavity length on the opposite side. Using equivalent chirp methodology, the two peaks of the photon distributions of the two lasing modes are separated, significantly reducing the overlap region and ensuring stable dual-wavelength operation. Moreover, the wavelength separation can be adjusted by changing the chirp rate. Lateral modulation of the grating coefficient κ allows tuning of the dual-wavelength separation by adjusting the DWL cavity length and the κ value. We show that 4PS-SMG exhibits perfect apodization with a cosine profile and two π phase shifts in the cavity, eliminating the need for intentional insertion of two π phase shifts in the DWL cavity to achieve dual-wavelength operation. All the aforementioned DWLs serve as compact pumping sources for generating THz/MMW signals.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. 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Additionally, we have explored the use of 4PS-SBG combined with equivalent chirp technology, lateral modulation of the grating coupling coefficient κ, and four-phase-shifted sampled Moiré gratings (4PS-SMG) for millimeter-wave (MMW) signal generation. All the DWLs were fabricated in the AlGaInAs/InP system operating around 1550 nm. For DWLs using UBG, even employing e-beam lithography at its resolution limit of 0.5 nm, the smallest frequency separation is constrained to approximately 400 GHz. C-SBG designs allow precise control of the frequency separation, down to 1.1 GHz, but the effective grating coupling coefficient is only 1/π of that of UBG. Utilizing 2PS-SBG technology can automatically produce DWLs while maintaining the same sampling periods on both sides of the ridge waveguide. The 4PS-SBG demonstrates a higher effective κ (approximately 0.9x that of UBG) compared to the 2PS-SBG (approximately 0.64x that of UBG). To ensure single longitudinal mode operation and mitigate longitudinal mode competition, an equivalent π phase shift (EPS) is inserted at 1/3 of the DFB cavity length on one side, and another EPS is placed at 2/3 of the DFB cavity length on the opposite side. Using equivalent chirp methodology, the two peaks of the photon distributions of the two lasing modes are separated, significantly reducing the overlap region and ensuring stable dual-wavelength operation. Moreover, the wavelength separation can be adjusted by changing the chirp rate. Lateral modulation of the grating coefficient κ allows tuning of the dual-wavelength separation by adjusting the DWL cavity length and the κ value. We show that 4PS-SMG exhibits perfect apodization with a cosine profile and two π phase shifts in the cavity, eliminating the need for intentional insertion of two π phase shifts in the DWL cavity to achieve dual-wavelength operation. 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Monolithic Dual Wavelength DFB Lasers Based on Sidewall Gratings for THz/MMW Signal Generation
We have developed a series of dual-wavelength DFB lasers (DWLs) based on different sidewall grating designs. These include DWLs utilizing uniform Bragg gratings (UBG), conventional sampled Bragg gratings (C-SBG), two-phase shifted sampled Bragg gratings (2PS-SBG), and four-phase shifted sampled Bragg gratings (4PS-SBG) for THz signal generation. Additionally, we have explored the use of 4PS-SBG combined with equivalent chirp technology, lateral modulation of the grating coupling coefficient κ, and four-phase-shifted sampled Moiré gratings (4PS-SMG) for millimeter-wave (MMW) signal generation. All the DWLs were fabricated in the AlGaInAs/InP system operating around 1550 nm. For DWLs using UBG, even employing e-beam lithography at its resolution limit of 0.5 nm, the smallest frequency separation is constrained to approximately 400 GHz. C-SBG designs allow precise control of the frequency separation, down to 1.1 GHz, but the effective grating coupling coefficient is only 1/π of that of UBG. Utilizing 2PS-SBG technology can automatically produce DWLs while maintaining the same sampling periods on both sides of the ridge waveguide. The 4PS-SBG demonstrates a higher effective κ (approximately 0.9x that of UBG) compared to the 2PS-SBG (approximately 0.64x that of UBG). To ensure single longitudinal mode operation and mitigate longitudinal mode competition, an equivalent π phase shift (EPS) is inserted at 1/3 of the DFB cavity length on one side, and another EPS is placed at 2/3 of the DFB cavity length on the opposite side. Using equivalent chirp methodology, the two peaks of the photon distributions of the two lasing modes are separated, significantly reducing the overlap region and ensuring stable dual-wavelength operation. Moreover, the wavelength separation can be adjusted by changing the chirp rate. Lateral modulation of the grating coefficient κ allows tuning of the dual-wavelength separation by adjusting the DWL cavity length and the κ value. We show that 4PS-SMG exhibits perfect apodization with a cosine profile and two π phase shifts in the cavity, eliminating the need for intentional insertion of two π phase shifts in the DWL cavity to achieve dual-wavelength operation. All the aforementioned DWLs serve as compact pumping sources for generating THz/MMW signals.
期刊介绍:
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.