Yanzhao Liu , Huiping Xi , Yuanyuan Li , Fei Jiang , Wenwen Zhang
{"title":"用于高效光电器件的可重构带对齐 WTe2/WSi2As4 范德瓦耳斯异质结构","authors":"Yanzhao Liu , Huiping Xi , Yuanyuan Li , Fei Jiang , Wenwen Zhang","doi":"10.1016/j.physe.2024.116052","DOIUrl":null,"url":null,"abstract":"<div><p>Integration of two-dimensional materials into van der Waals heterostructures (vdWHs) provides advantages in terms of structural flexibility, interfacial modulation capabilities, and diverse device designs. We constructed the WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> vdWHs and explored the electronic and optical properties in detail, revealing the modulation behavior for electronic structure of WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> by applied electric field and biaxial strain. The intrinsic heterostructures exhibits a type I band alignment with a direct band gap of 0.701 eV, covering the optical absorption properties from the infrared to the ultraviolet range with absorption coefficients up to 10<sup>5</sup>. In particular, the WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> vdWHs can transition from a type I to type II band alignment in the presence of an external electric field. The present work provides directions for tunable multi-band alignment in WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> vdWHs, contributing to high-efficiency photodetectors and multipurpose optoelectronic device applications.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"164 ","pages":"Article 116052"},"PeriodicalIF":2.9000,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reconfigurable band alignment WTe2/WSi2As4 van der Waals heterostructures for efficient optoelectronic devices\",\"authors\":\"Yanzhao Liu , Huiping Xi , Yuanyuan Li , Fei Jiang , Wenwen Zhang\",\"doi\":\"10.1016/j.physe.2024.116052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Integration of two-dimensional materials into van der Waals heterostructures (vdWHs) provides advantages in terms of structural flexibility, interfacial modulation capabilities, and diverse device designs. We constructed the WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> vdWHs and explored the electronic and optical properties in detail, revealing the modulation behavior for electronic structure of WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> by applied electric field and biaxial strain. The intrinsic heterostructures exhibits a type I band alignment with a direct band gap of 0.701 eV, covering the optical absorption properties from the infrared to the ultraviolet range with absorption coefficients up to 10<sup>5</sup>. In particular, the WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> vdWHs can transition from a type I to type II band alignment in the presence of an external electric field. The present work provides directions for tunable multi-band alignment in WTe<sub>2</sub>/WSi<sub>2</sub>As<sub>4</sub> vdWHs, contributing to high-efficiency photodetectors and multipurpose optoelectronic device applications.</p></div>\",\"PeriodicalId\":20181,\"journal\":{\"name\":\"Physica E-low-dimensional Systems & Nanostructures\",\"volume\":\"164 \",\"pages\":\"Article 116052\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica E-low-dimensional Systems & Nanostructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1386947724001565\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947724001565","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0
摘要
将二维材料集成到范德华异质结构（vdWHs）中具有结构灵活、界面调制能力强和器件设计多样化等优势。我们构建了 WTe2/WSi2As4 vdWHs，并详细探讨了其电子和光学特性，揭示了外加电场和双轴应变对 WTe2/WSi2As4 电子结构的调制行为。本征异质结构呈现出 I 型带排列，直接带隙为 0.701 eV，具有从红外到紫外范围的光吸收特性，吸收系数高达 105。特别是，在外部电场的作用下，WTe2/WSi2As4 vdWHs 可以从 I 型带排列过渡到 II 型带排列。本研究为 WTe2/WSi2As4 vdWHs 的可调多波段排列提供了方向，有助于高效光电探测器和多用途光电器件的应用。
Reconfigurable band alignment WTe2/WSi2As4 van der Waals heterostructures for efficient optoelectronic devices
Integration of two-dimensional materials into van der Waals heterostructures (vdWHs) provides advantages in terms of structural flexibility, interfacial modulation capabilities, and diverse device designs. We constructed the WTe2/WSi2As4 vdWHs and explored the electronic and optical properties in detail, revealing the modulation behavior for electronic structure of WTe2/WSi2As4 by applied electric field and biaxial strain. The intrinsic heterostructures exhibits a type I band alignment with a direct band gap of 0.701 eV, covering the optical absorption properties from the infrared to the ultraviolet range with absorption coefficients up to 105. In particular, the WTe2/WSi2As4 vdWHs can transition from a type I to type II band alignment in the presence of an external electric field. The present work provides directions for tunable multi-band alignment in WTe2/WSi2As4 vdWHs, contributing to high-efficiency photodetectors and multipurpose optoelectronic device applications.
期刊介绍：
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures
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