Tae Young Yoon, Dong Gyu Park, Seong Yun Kim, Garam Kim, Sangwan Kim, Jang Hyun Kim
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引用次数: 0
摘要
本研究为反向导电绝缘栅双极晶体管(RC-IGBT)提出了两种新结构,通过重新定位 N 集电极和在每个器件的集电极区域使用硅锗,有效防止了快返现象。由于改变了 N 集电极的位置以防止电子萃取,因此拟议结构的正向模式显示出 IC- VC 特性,而不会出现卡回现象。在反向模式中,硅锗通过隧道作用产生电流,并影响电离机制。重要的是,即使在离子注入过程中 N 集电极的长度出现误差,所提出的结构也能产生稳定的电流值,从而提高了器件的可靠性。此外,与传统的 RC-IGBT 相比,所提出的结构在 700 V 左右的击穿电压以及导通和关断损耗方面表现出相似的值。因此,本文在保持 RC-IGBT 独特电气特性的同时,还减轻了快返效应,从而提高了 RC-IGBT 的可靠性。
RC-IGBT snapback suppression using silicon germanium collector regions
In this study, two new structures are proposed for reverse-conducting insulated gate bipolar transistors (RC-IGBT) that effectively prevent snapback by relocating the N-collectors and utilizing silicon–germanium in the collector region of each device. The forward mode of the proposed structures shows IC− VC characteristics without snapback, since the position of the N-collector is changed to prevent electron extraction. In the reverse mode, the silicon–germanium induces currents through tunneling and impacts the ionization mechanisms. Importantly, the proposed structures generate a stable current value even if there are errors in the length of the N-collector during ion implantation, which enhances the reliability of the device. In addition, the proposed structures exhibit similar values for the breakdown voltage at around 700 V and the turn-on and turn-off losses when compared to the conventional RC-IGBT. Thus, this paper improves the reliability of RC-IGBTs by mitigating the snapback effect while maintaining their unique electrical properties.
期刊介绍:
The scope of Journal of Power Electronics includes all issues in the field of Power Electronics. Included are techniques for power converters, adjustable speed drives, renewable energy, power quality and utility applications, analysis, modeling and control, power devices and components, power electronics education, and other application.