Pub Date : 2024-09-19DOI: 10.1007/s43236-024-00907-0
Xiaowei Zhang, Jiqing Cui, Jinghua Zhou
The DC bus voltage in single-phase converters inherently exhibits a second harmonic ripple. To accurately track the current reference value, notch filters are typically incorporated into the software control loop for suppression. However, traditional notch filters suffer from slow response times and significant oscillations. This paper presents an enhanced DC bus voltage extraction algorithm that estimates the second harmonic component in the DC bus voltage using system parameters and variables, without modifying the basic circuit structure or adding additional notch filters to the bus voltage control loop. By redesigning the voltage outer loop, the algorithm aims to reduce the overshoot and oscillations during voltage adjustments, improving the response speed. When integrated with a quasi-PR regulator-based current inner loop, this dual-loop control strategy effectively minimizes the overshoot and oscillations during voltage adjustments, enhances the response speed, and improves system stability. The effectiveness and validity of the proposed control strategy are demonstrated through MATLAB simulations and prototype experiments.
{"title":"Design of DC bus voltage high dynamic performance control for single-phase converters","authors":"Xiaowei Zhang, Jiqing Cui, Jinghua Zhou","doi":"10.1007/s43236-024-00907-0","DOIUrl":"https://doi.org/10.1007/s43236-024-00907-0","url":null,"abstract":"<p>The DC bus voltage in single-phase converters inherently exhibits a second harmonic ripple. To accurately track the current reference value, notch filters are typically incorporated into the software control loop for suppression. However, traditional notch filters suffer from slow response times and significant oscillations. This paper presents an enhanced DC bus voltage extraction algorithm that estimates the second harmonic component in the DC bus voltage using system parameters and variables, without modifying the basic circuit structure or adding additional notch filters to the bus voltage control loop. By redesigning the voltage outer loop, the algorithm aims to reduce the overshoot and oscillations during voltage adjustments, improving the response speed. When integrated with a quasi-PR regulator-based current inner loop, this dual-loop control strategy effectively minimizes the overshoot and oscillations during voltage adjustments, enhances the response speed, and improves system stability. The effectiveness and validity of the proposed control strategy are demonstrated through MATLAB simulations and prototype experiments.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"10 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1007/s43236-024-00911-4
Zheng Gong, Libo Zang, Guanqi Wang, Zhenjia Shen
Insulated gate bipolar transistors (IGBTs) are widely used in grid-connected renewable energy generation. Junction temperature fluctuation is an important factor affecting the operating lifetime of IGBT modules. Many active thermal management methods for suppressing junction temperature fluctuation exist, but research on the implementation of thermal management in converters is limited. Junction temperature extraction is the basis of implementing thermal management. In this study, a thermal network model method and a temperature-sensitive electrical parameter (TSEP) method for junction temperature estimation are analyzed first. Aiming to limit the maximum junction temperature of IGBTs, a thermal management method is proposed by changing switching frequency. Then, for a three-phase two-level inverter, the effectiveness of the proposed thermal management method is analyzed by offline simulation based on the thermal network model method. Lastly, the IGBT junction temperature in the inverter is estimated online by using the TSEP method and the feasibility of the thermal management implementation method is verified on an experimental platform.
{"title":"Thermal management implementation method for IGBT modules of inverters based on junction temperature estimation","authors":"Zheng Gong, Libo Zang, Guanqi Wang, Zhenjia Shen","doi":"10.1007/s43236-024-00911-4","DOIUrl":"https://doi.org/10.1007/s43236-024-00911-4","url":null,"abstract":"<p>Insulated gate bipolar transistors (IGBTs) are widely used in grid-connected renewable energy generation. Junction temperature fluctuation is an important factor affecting the operating lifetime of IGBT modules. Many active thermal management methods for suppressing junction temperature fluctuation exist, but research on the implementation of thermal management in converters is limited. Junction temperature extraction is the basis of implementing thermal management. In this study, a thermal network model method and a temperature-sensitive electrical parameter (TSEP) method for junction temperature estimation are analyzed first. Aiming to limit the maximum junction temperature of IGBTs, a thermal management method is proposed by changing switching frequency. Then, for a three-phase two-level inverter, the effectiveness of the proposed thermal management method is analyzed by offline simulation based on the thermal network model method. Lastly, the IGBT junction temperature in the inverter is estimated online by using the TSEP method and the feasibility of the thermal management implementation method is verified on an experimental platform.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"31 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1007/s43236-024-00913-2
Shengwei Gao, Kaixin Zhao, Haobo Zhang
This study proposes a new type of quadratic high-gain boost converter to address the problems of high-voltage switching stress and poor dynamic response of the traditional quadratic high-gain boost converter. The proposed quadratic high-gain boost converter can be operated in inductive current continuous conduction mode and pseudo-continuous conduction mode according to different control modes. Results show that the voltage switching stress when the converter is operated in inductive current continuous conduction mode is reduced by 65% compared with the voltage switching stress when the traditional quadratic high-gain boost converter is used. The dynamic response speed when the converter is operated in pseudo-continuous conduction mode is improved by 35% compared with that when the traditional quadratic high-gain boost converter is used. Moreover, additional control freedom is obtained, thereby reducing the difficulty in the design of the compensator. Finally, the veracity of the proposed theory is verified by building an experimental prototype.
{"title":"Novel quadratic high-gain boost converter","authors":"Shengwei Gao, Kaixin Zhao, Haobo Zhang","doi":"10.1007/s43236-024-00913-2","DOIUrl":"https://doi.org/10.1007/s43236-024-00913-2","url":null,"abstract":"<p>This study proposes a new type of quadratic high-gain boost converter to address the problems of high-voltage switching stress and poor dynamic response of the traditional quadratic high-gain boost converter. The proposed quadratic high-gain boost converter can be operated in inductive current continuous conduction mode and pseudo-continuous conduction mode according to different control modes. Results show that the voltage switching stress when the converter is operated in inductive current continuous conduction mode is reduced by 65% compared with the voltage switching stress when the traditional quadratic high-gain boost converter is used. The dynamic response speed when the converter is operated in pseudo-continuous conduction mode is improved by 35% compared with that when the traditional quadratic high-gain boost converter is used. Moreover, additional control freedom is obtained, thereby reducing the difficulty in the design of the compensator. Finally, the veracity of the proposed theory is verified by building an experimental prototype.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"3 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An improved semi-physical model for a SiC MOSFET incorporated with relevant physical effects and temperature characteristics is proposed based on the EKV model. A simulation analysis of the Junction Field Effect Transistor (JFET) effect, Drain Induced Barrier Lowering (DIBL) effect, channel length modulation effect, velocity saturation effect, and interface trap charge effect in SiC MOSFET devices is performed using Sentaurus TCAD. Based on the influence of physical effects on the characteristics of SiC MOSFET devices, mathematical corrections r(Vgs) and r(Vds), which can describe the relevant physical effects, are introduced into the original EKV model. The capacitance is accurately modelled to achieve the required match between the transient characteristics of the devices. The accuracy of the model is verified by static tests and double-pulse experiments. Results show that the improved model can do a better job of simulating the actual operating conditions of the device. In addition, its accuracy and applicability are greatly improved, providing a semi-physical model with a wider range of applicability for the simulation of SiC MOSFETs in power electronic systems.
在 EKV 模型的基础上,提出了一个包含相关物理效应和温度特性的改进型 SiC MOSFET 半物理模型。使用 Sentaurus TCAD 对 SiC MOSFET 器件中的结场效应晶体管 (JFET) 效应、漏极诱导势垒降低 (DIBL) 效应、沟道长度调制效应、速度饱和效应和界面阱电荷效应进行了仿真分析。根据物理效应对 SiC MOSFET 器件特性的影响,在原始 EKV 模型中引入了能描述相关物理效应的数学修正 r(Vgs) 和 r(Vds)。对电容进行了精确建模,以实现器件瞬态特性之间所需的匹配。静态测试和双脉冲实验验证了模型的准确性。结果表明,改进后的模型能更好地模拟器件的实际工作条件。此外,该模型的准确性和适用性也得到了极大改善,为电力电子系统中 SiC MOSFET 的仿真提供了一个适用范围更广的半物理模型。
{"title":"Modelling of SiC MOSFET power devices incorporating physical effects","authors":"Yafei Ding, Weijing Liu, Wei Bai, Xiaodong Tang, Naiyun Tang, Tuanqing Yun, Yonglin Bai, Yueyang Wang, Yu Peng, Yingjie Ma, Wenlong Yang, Zirui Wang","doi":"10.1007/s43236-024-00912-3","DOIUrl":"https://doi.org/10.1007/s43236-024-00912-3","url":null,"abstract":"<p>An improved semi-physical model for a SiC MOSFET incorporated with relevant physical effects and temperature characteristics is proposed based on the EKV model. A simulation analysis of the Junction Field Effect Transistor (JFET) effect, Drain Induced Barrier Lowering (DIBL) effect, channel length modulation effect, velocity saturation effect, and interface trap charge effect in SiC MOSFET devices is performed using Sentaurus TCAD. Based on the influence of physical effects on the characteristics of SiC MOSFET devices, mathematical corrections r(<i>V</i><sub>gs</sub>) and r(<i>V</i><sub>ds</sub>), which can describe the relevant physical effects, are introduced into the original EKV model. The capacitance is accurately modelled to achieve the required match between the transient characteristics of the devices. The accuracy of the model is verified by static tests and double-pulse experiments. Results show that the improved model can do a better job of simulating the actual operating conditions of the device. In addition, its accuracy and applicability are greatly improved, providing a semi-physical model with a wider range of applicability for the simulation of SiC MOSFETs in power electronic systems.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"14 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1007/s43236-024-00916-z
Yunjun Yu, Yunquan Song, Hongwei Tao
The reliability of rectifiers is regarded as one of the most important factors in traction systems. Unexpected faults occurring in sensors can degrade the performance and lead to secondary faults. Accordingly, a sensor fault diagnosis method is proposed in this paper. It can locate faults and identify fault types. Three high-incidence fault types in current and voltage sensors have been taken into consideration. Only the current residual is needed in the process of fault diagnosis. No additional sensors are required in this method. First, a traction rectifier model is developed. Then, a grid current estimator is constructed, the residual is acquired and applied to fault detection. Next, the residual is analyzed under different kinds of sensor faults. Fault diagnosis functions are constructed and the faults can be diagnosed. Finally, an experiment test is processed to demonstrate the effectiveness of the proposed method.
{"title":"Fault location and type identification method for current and voltage sensors in traction rectifiers","authors":"Yunjun Yu, Yunquan Song, Hongwei Tao","doi":"10.1007/s43236-024-00916-z","DOIUrl":"https://doi.org/10.1007/s43236-024-00916-z","url":null,"abstract":"<p>The reliability of rectifiers is regarded as one of the most important factors in traction systems. Unexpected faults occurring in sensors can degrade the performance and lead to secondary faults. Accordingly, a sensor fault diagnosis method is proposed in this paper. It can locate faults and identify fault types. Three high-incidence fault types in current and voltage sensors have been taken into consideration. Only the current residual is needed in the process of fault diagnosis. No additional sensors are required in this method. First, a traction rectifier model is developed. Then, a grid current estimator is constructed, the residual is acquired and applied to fault detection. Next, the residual is analyzed under different kinds of sensor faults. Fault diagnosis functions are constructed and the faults can be diagnosed. Finally, an experiment test is processed to demonstrate the effectiveness of the proposed method.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"2 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1007/s43236-024-00909-y
Wang Tian, Maochi Yu, Zhizong Su, Yunyu Hong, Zhanghai Shi
Dual active bridge (DAB) converters have two control variables when they work with dual phase shift (DPS) modulation. These control variables are the inner phase-shift ratio and the outer phase-shift ratio. They can be optimized to achieve minimum current stress during the operation of DAB converters. Conventional optimization methods cannot ensure soft-switching of the power semiconductor devices, which limits the efficiency and reliability of DAB converters. To balance the current stress and switching loss of DAB converters with DPS modulation, a novel optimal DPS strategy is proposed for DAB converters. The proposed strategy can ensure ZVS and avoid voltage spikes of the power semiconductor devices in DAB converters over the full load range. Meanwhile, it can achieve the minimum current stress under heavy loads and near-minimum current stress under middle and light loads for the components in DAB converters. The experimental results reveal that the proposed strategy achieves higher efficiency than conventional optimization methods under heavy and light loads. For middle loads, it is predicted that the proposed strategy can achieve higher efficiency when the switching loss is dominant. Moreover, the experimental results show that the voltage spikes of the MOSFETs are eliminated by the proposed strategy, which indicates a higher reliability than conventional strategies.
双主动桥(DAB)转换器在使用双移相(DPS)调制时有两个控制变量。这两个控制变量是内相移比和外相移比。可以对它们进行优化,以在 DAB 转换器运行期间实现最小的电流应力。传统的优化方法无法确保功率半导体器件的软开关,从而限制了 DAB 转换器的效率和可靠性。为了平衡采用 DPS 调制的 DAB 转换器的电流应力和开关损耗,我们为 DAB 转换器提出了一种新的最佳 DPS 策略。所提出的策略能在全负载范围内确保 ZVS 并避免 DAB 转换器中功率半导体器件的电压尖峰。同时,它还能使 DAB 转换器中的元件在重负载下达到最小电流应力,在中负载和轻负载下接近最小电流应力。实验结果表明,在重负载和轻负载情况下,所提出的策略比传统优化方法实现了更高的效率。对于中等负载,预计当开关损耗占主导地位时,建议的策略可以实现更高的效率。此外,实验结果表明,提议的策略消除了 MOSFET 的电压尖峰,这表明它比传统策略具有更高的可靠性。
{"title":"Optimized current stress strategy for dual-phase-shift modulated dual active bridge converters to ensure full-load-range ZVS","authors":"Wang Tian, Maochi Yu, Zhizong Su, Yunyu Hong, Zhanghai Shi","doi":"10.1007/s43236-024-00909-y","DOIUrl":"https://doi.org/10.1007/s43236-024-00909-y","url":null,"abstract":"<p>Dual active bridge (DAB) converters have two control variables when they work with dual phase shift (DPS) modulation. These control variables are the inner phase-shift ratio and the outer phase-shift ratio. They can be optimized to achieve minimum current stress during the operation of DAB converters. Conventional optimization methods cannot ensure soft-switching of the power semiconductor devices, which limits the efficiency and reliability of DAB converters. To balance the current stress and switching loss of DAB converters with DPS modulation, a novel optimal DPS strategy is proposed for DAB converters. The proposed strategy can ensure ZVS and avoid voltage spikes of the power semiconductor devices in DAB converters over the full load range. Meanwhile, it can achieve the minimum current stress under heavy loads and near-minimum current stress under middle and light loads for the components in DAB converters. The experimental results reveal that the proposed strategy achieves higher efficiency than conventional optimization methods under heavy and light loads. For middle loads, it is predicted that the proposed strategy can achieve higher efficiency when the switching loss is dominant. Moreover, the experimental results show that the voltage spikes of the MOSFETs are eliminated by the proposed strategy, which indicates a higher reliability than conventional strategies.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"195 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1007/s43236-024-00899-x
Seunghoon Lee, Honnyong Cha, Kisu Kim, Van-Dai Bui
Bipolar dc distribution system is an attractive alternative to replace the conventional ac distribution system; however, it suffers from voltage and current unbalances. In parallel-connected triple-active-bridge (TAB) converters that form a bipolar dc distribution system, the current unbalance between each TAB module and the voltage unbalance between each load are the main issues that make controlling the system difficult. These unbalances occur due to the inevitable mismatch of gate signals and circuit parameters, despite having the same circuit components. A four-winding coupled inductor is proposed in this paper to handle these issues. The coupled inductor is formed by the magnetic integration of the inductors, which are present in TAB converters. Inductors in the same TAB module are directly coupled and the two directly coupled inductors are integrated again in the inverse direction. The proposed coupled inductor automatically balances the currents in each module and the voltages of each load under unbalanced conditions. Moreover, the proposed balancing scheme does not require additional control method or balancer circuit. The performance of the proposed coupled inductor was verified with a 10-kW prototype.
{"title":"Parallel connected triple-active-bridge converters with current and voltage balancing coupled inductor for bipolar DC distribution","authors":"Seunghoon Lee, Honnyong Cha, Kisu Kim, Van-Dai Bui","doi":"10.1007/s43236-024-00899-x","DOIUrl":"https://doi.org/10.1007/s43236-024-00899-x","url":null,"abstract":"<p>Bipolar dc distribution system is an attractive alternative to replace the conventional ac distribution system; however, it suffers from voltage and current unbalances. In parallel-connected triple-active-bridge (TAB) converters that form a bipolar dc distribution system, the current unbalance between each TAB module and the voltage unbalance between each load are the main issues that make controlling the system difficult. These unbalances occur due to the inevitable mismatch of gate signals and circuit parameters, despite having the same circuit components. A four-winding coupled inductor is proposed in this paper to handle these issues. The coupled inductor is formed by the magnetic integration of the inductors, which are present in TAB converters. Inductors in the same TAB module are directly coupled and the two directly coupled inductors are integrated again in the inverse direction. The proposed coupled inductor automatically balances the currents in each module and the voltages of each load under unbalanced conditions. Moreover, the proposed balancing scheme does not require additional control method or balancer circuit. The performance of the proposed coupled inductor was verified with a 10-kW prototype.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"5 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes a rotating wireless power transfer system with dual-coupled LCC-LCC topology based on a self-decoupled rotary coupler for addressing the issues of wear and short lifespan associated with traditional electric brush slip rings. In comparison to the conventional single-coupled LCC-LCC topology, the proposed system results in a significant increase in output power and a more compact structure. First, the dual-coupled LCC-LCC topology circuit system is analyzed. A self-decoupled rotary coupler incorporating two pairs of coupled coils is proposed. Second, through the utilization of simulation software, the effects of coil dimension, turns, and magnetic shielding on the self-inductance and coupling coefficients are analyzed, optimizing the coupler for compactness and miniaturization. Third, an experimental setup is established to validate the self-decoupled performance and power enhancement capabilities of the designed coupler. Experimental results demonstrate that, under positive conditions, the proposed self-decoupled coupler achieves a system transmission power of 62.54 W, which is 240% higher than that of single-coupled systems, albeit with an 11.2% efficiency decrease. This system is suitable for rapid charging in rotary applications.
{"title":"Self-decoupled coupler based dual-coupled LCC-LCC rotating wireless power transfer system with enhanced output power","authors":"Zheyuan Guo, Jiangui Li, Longyang Wang, Yinchong Peng, Qinghe Si, Guangbin Luo","doi":"10.1007/s43236-024-00905-2","DOIUrl":"https://doi.org/10.1007/s43236-024-00905-2","url":null,"abstract":"<p>This paper proposes a rotating wireless power transfer system with dual-coupled LCC-LCC topology based on a self-decoupled rotary coupler for addressing the issues of wear and short lifespan associated with traditional electric brush slip rings. In comparison to the conventional single-coupled LCC-LCC topology, the proposed system results in a significant increase in output power and a more compact structure. First, the dual-coupled LCC-LCC topology circuit system is analyzed. A self-decoupled rotary coupler incorporating two pairs of coupled coils is proposed. Second, through the utilization of simulation software, the effects of coil dimension, turns, and magnetic shielding on the self-inductance and coupling coefficients are analyzed, optimizing the coupler for compactness and miniaturization. Third, an experimental setup is established to validate the self-decoupled performance and power enhancement capabilities of the designed coupler. Experimental results demonstrate that, under positive conditions, the proposed self-decoupled coupler achieves a system transmission power of 62.54 W, which is 240% higher than that of single-coupled systems, albeit with an 11.2% efficiency decrease. This system is suitable for rapid charging in rotary applications.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"65 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142249439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1007/s43236-024-00904-3
Maurizio Di Nella, Francesco de Paulis, Carlo Olivieri, Antonio Orlandi
Nowadays, almost all electronic systems on printed circuit boards (PCB) adopt a vital element known as the power delivery network (PDN). However, the performance of the PDN is susceptible to variables such as the temperature and aging of its key constituents: the decoupling capacitors (decaps). Consequently, the long-term reliability of the PDN demands meticulous consideration to foresee how its performance can deviate from the initial design specifications. A realistic high-current server system is considered. It involves hundreds of decaps to achieve the required target impedance as optimally selected and laid out by the Power Integrity (PI) designer. The degradation of decap performance is analyzed by collecting experimental data from tens of decaps for each type used in the design while applying an accelerated aging process at different temperatures. The impact of aging in terms of the capacitance, parasitic inductance, and resistance of the decaps is considered to illustrate an innovative methodological design approach based on statistical analysis. Such a design approach can prevent the detrimental impact of a larger noise level due to the gradual performance degradation of the PDN over the intended life cycle of the system.
{"title":"Impact of decoupling capacitor aging and temperature for the long-term reliability of power delivery networks","authors":"Maurizio Di Nella, Francesco de Paulis, Carlo Olivieri, Antonio Orlandi","doi":"10.1007/s43236-024-00904-3","DOIUrl":"https://doi.org/10.1007/s43236-024-00904-3","url":null,"abstract":"<p>Nowadays, almost all electronic systems on printed circuit boards (PCB) adopt a vital element known as the power delivery network (PDN). However, the performance of the PDN is susceptible to variables such as the temperature and aging of its key constituents: the decoupling capacitors (decaps). Consequently, the long-term reliability of the PDN demands meticulous consideration to foresee how its performance can deviate from the initial design specifications. A realistic high-current server system is considered. It involves hundreds of decaps to achieve the required target impedance as optimally selected and laid out by the Power Integrity (PI) designer. The degradation of decap performance is analyzed by collecting experimental data from tens of decaps for each type used in the design while applying an accelerated aging process at different temperatures. The impact of aging in terms of the capacitance, parasitic inductance, and resistance of the decaps is considered to illustrate an innovative methodological design approach based on statistical analysis. Such a design approach can prevent the detrimental impact of a larger noise level due to the gradual performance degradation of the PDN over the intended life cycle of the system.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"161 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1007/s43236-024-00906-1
Weiman Yang, Jianfeng Gu, Xingfeng Xie, Xianglin Wei, Hao Ye
Aiming at the problems of high similarity and difficulty in extracting the fault features of power-switching tubes, as well as the high complexity of fault diagnosis models, the large number of parameters, and the long fault diagnosis time of the multilevel cascaded H-bridge inverter in medium-voltage and high-voltage applications, this study proposes a fault diagnosis method based on a lightweight shuffle–SimAM network. First, the proposed method establishes a lightweight parallel ShuffleNet network model and utilizes multi-sensor data as the input of each parallel network for the initial extraction of similar fault features. Second, a feature fusion module is constructed inside the network to weight and fuse the features extracted at each level of the parallel network. Then the fused features are successively advanced to further enhance the extraction of similar fault features. Finally, to maintain the network with high diagnostic accuracy while improving the level of lightweighting, deep separable convolution and SimAM parameter-free attention mechanisms are introduced into the diagnostic network. Experimental results show that the proposed method effectively reduced the complexity of the model and the diagnosis time while maintaining a high diagnosis accuracy.
针对多电平级联 H 桥逆变器在中压和高压应用中存在的功率开关管故障特征相似度高、提取困难,以及故障诊断模型复杂度高、参数数量多、故障诊断时间长等问题,本研究提出了一种基于轻量级 Shuffle-SimAM 网络的故障诊断方法。首先,该方法建立了轻量级并行 ShuffleNet 网络模型,利用多传感器数据作为每个并行网络的输入,初步提取相似故障特征。其次,在网络内部构建一个特征融合模块,对并行网络各层提取的特征进行加权和融合。然后,将融合后的特征依次向前推进,以进一步加强相似故障特征的提取。最后,为了在提高轻量化水平的同时保持网络的高诊断精度,在诊断网络中引入了深度可分离卷积和 SimAM 无参数注意机制。实验结果表明,所提出的方法有效降低了模型的复杂度,缩短了诊断时间,同时保持了较高的诊断精度。
{"title":"Lightweight shuffle–SimAM network-based open-circuit fault diagnosis of grid-connected cascaded H-bridge inverters","authors":"Weiman Yang, Jianfeng Gu, Xingfeng Xie, Xianglin Wei, Hao Ye","doi":"10.1007/s43236-024-00906-1","DOIUrl":"https://doi.org/10.1007/s43236-024-00906-1","url":null,"abstract":"<p>Aiming at the problems of high similarity and difficulty in extracting the fault features of power-switching tubes, as well as the high complexity of fault diagnosis models, the large number of parameters, and the long fault diagnosis time of the multilevel cascaded H-bridge inverter in medium-voltage and high-voltage applications, this study proposes a fault diagnosis method based on a lightweight shuffle–SimAM network. First, the proposed method establishes a lightweight parallel ShuffleNet network model and utilizes multi-sensor data as the input of each parallel network for the initial extraction of similar fault features. Second, a feature fusion module is constructed inside the network to weight and fuse the features extracted at each level of the parallel network. Then the fused features are successively advanced to further enhance the extraction of similar fault features. Finally, to maintain the network with high diagnostic accuracy while improving the level of lightweighting, deep separable convolution and SimAM parameter-free attention mechanisms are introduced into the diagnostic network. Experimental results show that the proposed method effectively reduced the complexity of the model and the diagnosis time while maintaining a high diagnosis accuracy.</p>","PeriodicalId":50081,"journal":{"name":"Journal of Power Electronics","volume":"22 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142200489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}