卤化物气相沉积 (001) β-Ga2O3 中具有低指数刻面的微凹槽：通过高灵敏发射显微镜和同步辐射 X 射线形貌图观察肖特基势垒二极管中反向漏电流的起源

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED Applied Physics Express Pub Date : 2024-07-16 DOI:10.35848/1882-0786/ad5bbe

Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi

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引用次数: 0

摘要

我们发现，在肖特基势垒二极管中通过卤化物气相外延沉积的 (001) β-Ga2O3 外延层上的微凹槽是反向漏电流流[-64 V 时为 -10.0 μA]点的杀手级缺陷。微槽倾向于沿[010]方向排列，每个微槽由(100)、(001)和( 02)低指数微面组成。微槽的[00]侧存在多晶缺陷。微槽底部的电场在 50 V 时达到 5.27 × 105 V cm-1，大约是平面电场的两倍。

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Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography

We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at 50 V, which is approximately twice that of the flat surface.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).