{"title":"用于 pH 传感器应用的对称/非对称垂直电解质绝缘半导体隧道场效应晶体管对比分析","authors":"Aditya Kumar Singh Pundir, Girish Wadhwa, Pawandeep Kaur, Prashant Mani, Sheetal Bhandari","doi":"10.1002/pssa.202400093","DOIUrl":null,"url":null,"abstract":"This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH biosensors are evaluated. A vertical electrolyte Bio‐TFET with overlapping electrodes is presented in this study. The pH response is measured by observing the change in drain current and potential when the pH of the injected solution transitions from a lower to a higher level. As an intrinsic semiconductor material, electrons and holes in the electrolyte represent mobile ions in the solution. The region of the electrolyte has an electron affinity of 1.32 eV, a bandgap of 1.12 eV, and a dielectric constant of 78. Double gate structures raise concerns about correctly aligning the right and left gates because of their sensitivity impact. An analysis of the effect of gate misalignment on biosensor surface potentials, drain currents, and transconductance is presented. Furthermore, pH value ranges of 1–14 are considered for various sensitivity parameters. Simulations are performed using Silvaco TCAD for the SV‐EIS‐TFET and ASV‐EIS‐TFET biosensors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"15 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application\",\"authors\":\"Aditya Kumar Singh Pundir, Girish Wadhwa, Pawandeep Kaur, Prashant Mani, Sheetal Bhandari\",\"doi\":\"10.1002/pssa.202400093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH biosensors are evaluated. A vertical electrolyte Bio‐TFET with overlapping electrodes is presented in this study. The pH response is measured by observing the change in drain current and potential when the pH of the injected solution transitions from a lower to a higher level. As an intrinsic semiconductor material, electrons and holes in the electrolyte represent mobile ions in the solution. The region of the electrolyte has an electron affinity of 1.32 eV, a bandgap of 1.12 eV, and a dielectric constant of 78. Double gate structures raise concerns about correctly aligning the right and left gates because of their sensitivity impact. An analysis of the effect of gate misalignment on biosensor surface potentials, drain currents, and transconductance is presented. Furthermore, pH value ranges of 1–14 are considered for various sensitivity parameters. Simulations are performed using Silvaco TCAD for the SV‐EIS‐TFET and ASV‐EIS‐TFET biosensors.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":\"15 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400093\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400093","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application
This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH biosensors are evaluated. A vertical electrolyte Bio‐TFET with overlapping electrodes is presented in this study. The pH response is measured by observing the change in drain current and potential when the pH of the injected solution transitions from a lower to a higher level. As an intrinsic semiconductor material, electrons and holes in the electrolyte represent mobile ions in the solution. The region of the electrolyte has an electron affinity of 1.32 eV, a bandgap of 1.12 eV, and a dielectric constant of 78. Double gate structures raise concerns about correctly aligning the right and left gates because of their sensitivity impact. An analysis of the effect of gate misalignment on biosensor surface potentials, drain currents, and transconductance is presented. Furthermore, pH value ranges of 1–14 are considered for various sensitivity parameters. Simulations are performed using Silvaco TCAD for the SV‐EIS‐TFET and ASV‐EIS‐TFET biosensors.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.