{"title":"基于氧化镓的场效应晶体管","authors":"Pharyanshu Kachhawa, Sk. Masiul Islam, Nidhi Chaturvedi","doi":"10.1002/pssa.202400400","DOIUrl":null,"url":null,"abstract":"The growing interest for power electronics devices demands suitable materials which can perform in harsh conditions. Gallium oxide () has shown tremendous potential in high voltage, high temperature, and gassensing applications due to its unique material properties. is considered to be the next‐generation material for power electronics owing to ultrawide bandgap of 4.5–4.9 eV and high electric field of 8 MV cm<jats:sup>−1</jats:sup>. These material properties coupled with high‐power figure of merits make a superior material compared to GaN and SiC. Herein, state‐of‐the‐art development and recent breakthroughs in ‐based field‐effect‐ transistors (FETs) highlighting major ongoing research are reviewed. The review describes the material property, band structure, and ‐based field‐effect transistors in detail. Some promising applications capitalizing the epitaxial growth techniques along with the characteristics and performance of ‐based devices are also explained. The prime objective of this review is to provide an up‐to‐date scientific framework pertaining to this niche emerging research area followed by device processing. This survey reveals the potential of ‐based FETs for high‐ voltage and high‐power applications while several critical challenges have to be still overcome. Finally, insights are represented and future perspectives of ‐based transistors along with their hetero‐structures are discussed.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"12 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gallium Oxide‐Based Field Effect Transistors\",\"authors\":\"Pharyanshu Kachhawa, Sk. Masiul Islam, Nidhi Chaturvedi\",\"doi\":\"10.1002/pssa.202400400\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growing interest for power electronics devices demands suitable materials which can perform in harsh conditions. Gallium oxide () has shown tremendous potential in high voltage, high temperature, and gassensing applications due to its unique material properties. is considered to be the next‐generation material for power electronics owing to ultrawide bandgap of 4.5–4.9 eV and high electric field of 8 MV cm<jats:sup>−1</jats:sup>. These material properties coupled with high‐power figure of merits make a superior material compared to GaN and SiC. Herein, state‐of‐the‐art development and recent breakthroughs in ‐based field‐effect‐ transistors (FETs) highlighting major ongoing research are reviewed. The review describes the material property, band structure, and ‐based field‐effect transistors in detail. Some promising applications capitalizing the epitaxial growth techniques along with the characteristics and performance of ‐based devices are also explained. The prime objective of this review is to provide an up‐to‐date scientific framework pertaining to this niche emerging research area followed by device processing. This survey reveals the potential of ‐based FETs for high‐ voltage and high‐power applications while several critical challenges have to be still overcome. Finally, insights are represented and future perspectives of ‐based transistors along with their hetero‐structures are discussed.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400400\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400400","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
人们对电力电子器件的兴趣与日俱增,这就需要能在苛刻条件下工作的合适材料。由于具有 4.5-4.9 eV 的超宽带隙和 8 MV cm-1 的高电场,氧化镓()被认为是下一代电力电子器件材料。与氮化镓和碳化硅相比,这些材料特性加上高功率特性使其成为一种更优越的材料。本文回顾了场效应晶体管(FET)的最新发展和突破,重点介绍了正在进行的主要研究。综述详细介绍了材料特性、带状结构和-基场效应晶体管。此外,还介绍了利用外延生长技术的一些有前途的应用,以及基于 - 的器件的特性和性能。本综述的主要目的是为这一利基新兴研究领域提供一个最新的科学框架,然后再进行器件加工。这项调查揭示了-基场效应晶体管在高压和大功率应用方面的潜力,同时也揭示了仍需克服的几个关键挑战。最后,还讨论了对-基晶体管及其异质结构的见解和未来展望。
The growing interest for power electronics devices demands suitable materials which can perform in harsh conditions. Gallium oxide () has shown tremendous potential in high voltage, high temperature, and gassensing applications due to its unique material properties. is considered to be the next‐generation material for power electronics owing to ultrawide bandgap of 4.5–4.9 eV and high electric field of 8 MV cm−1. These material properties coupled with high‐power figure of merits make a superior material compared to GaN and SiC. Herein, state‐of‐the‐art development and recent breakthroughs in ‐based field‐effect‐ transistors (FETs) highlighting major ongoing research are reviewed. The review describes the material property, band structure, and ‐based field‐effect transistors in detail. Some promising applications capitalizing the epitaxial growth techniques along with the characteristics and performance of ‐based devices are also explained. The prime objective of this review is to provide an up‐to‐date scientific framework pertaining to this niche emerging research area followed by device processing. This survey reveals the potential of ‐based FETs for high‐ voltage and high‐power applications while several critical challenges have to be still overcome. Finally, insights are represented and future perspectives of ‐based transistors along with their hetero‐structures are discussed.
期刊介绍:
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.