Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan
{"title":"开发具有宽调谐范围的 GHz 频率 BEOL 负电容铁电振荡器","authors":"Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan","doi":"10.1109/TNANO.2024.3430221","DOIUrl":null,"url":null,"abstract":"The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area \n<inline-formula><tex-math>$(\\sim\\!\\! 50\\,{\\bm{\\mu}}{{\\mathbf{m}}^2}\\,\\text{vs}{\\rm{.}}\\,\\sim 40000\\,{\\bm{\\mu}}{{\\mathbf{m}}^2})$</tex-math></inline-formula>\n, while achieving a similar figure of merit \n<inline-formula><tex-math>$\\mathbf{FO}{{\\mathbf{M}}_2}$</tex-math></inline-formula>\n (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"591-599"},"PeriodicalIF":2.1000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range\",\"authors\":\"Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan\",\"doi\":\"10.1109/TNANO.2024.3430221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area \\n<inline-formula><tex-math>$(\\\\sim\\\\!\\\\! 50\\\\,{\\\\bm{\\\\mu}}{{\\\\mathbf{m}}^2}\\\\,\\\\text{vs}{\\\\rm{.}}\\\\,\\\\sim 40000\\\\,{\\\\bm{\\\\mu}}{{\\\\mathbf{m}}^2})$</tex-math></inline-formula>\\n, while achieving a similar figure of merit \\n<inline-formula><tex-math>$\\\\mathbf{FO}{{\\\\mathbf{M}}_2}$</tex-math></inline-formula>\\n (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.\",\"PeriodicalId\":449,\"journal\":{\"name\":\"IEEE Transactions on Nanotechnology\",\"volume\":\"23 \",\"pages\":\"591-599\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nanotechnology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10603433/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10603433/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range
The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area
$(\sim\!\! 50\,{\bm{\mu}}{{\mathbf{m}}^2}\,\text{vs}{\rm{.}}\,\sim 40000\,{\bm{\mu}}{{\mathbf{m}}^2})$
, while achieving a similar figure of merit
$\mathbf{FO}{{\mathbf{M}}_2}$
(reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.
期刊介绍:
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.