用于精确无损内存读取的内存光电导传输方法

IF 20.6 Q1 OPTICS Light-Science & Applications Pub Date : 2024-07-23 DOI:10.1038/s41377-024-01519-w
Zhe Zhou, Yueyue Wu, Keyuan Pan, Duoyi Zhu, Zifan Li, Shiqi Yan, Qian Xin, Qiye Wang, Xinkai Qian, Fei Xiu, Wei Huang, Juqing Liu
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摘要

交叉条电阻式存储器架构可实现大容量存储和神经形态计算,在读取操作过程中,准确检索存储信息是前提条件。然而,传统的电读取通常过程复杂,由于潜行路径电流的串扰效应,读取不准确且具有破坏性。在此,我们报告了一种忆阻性光电导传输(MPT)方法,用于在忆阻性交叉棒阵列中进行精确和无损的读出。在电刺激下,单个器件呈现出用于电阻调制的动态灯丝形态/熔断,从而导致光生载流子传输,在随后的光脉冲刺激下产生可调光电导响应。这种相干信号转导可用于直接检测存储在每个单元中的记忆开/关状态,4*4 交叉条存储器的原型已经制作完成,并在调用过程中验证了无串扰读出的保真度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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A memristive-photoconductive transduction methodology for accurately nondestructive memory readout

Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing, accurate retrieval of the stored information is a prerequisite during read operation. However, conventional electrical readout normally suffer from complicated process, inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation, which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell, and a prototype 4 * 4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.

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来源期刊
Light-Science & Applications
Light-Science & Applications 数理科学, 物理学I, 光学, 凝聚态物性 II :电子结构、电学、磁学和光学性质, 无机非金属材料, 无机非金属类光电信息与功能材料, 工程与材料, 信息科学, 光学和光电子学, 光学和光电子材料, 非线性光学与量子光学
自引率
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发文量
803
审稿时长
2.1 months
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