{"title":"D03 型 Heusler 化合物 Fe3Si 中节点线诱导的大横向热电响应","authors":"Susumu Minami, Sota Hogaki, Takahiro Shimada","doi":"10.1103/physrevmaterials.8.075403","DOIUrl":null,"url":null,"abstract":"Giant magnetic transverse thermoelectric effect, anomalous Nernst effect (ANE), was theoretically and experimentally observed in <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>3</mn><mi>d</mi></mrow></math>-transition metal compounds. The intrinsic components of ANE can be described from the electronic structure based on the Berry phase concept. The topological electronic structure, such as the Weyl node and nodal lines, induces large Berry curvature, one origin of giant ANE. We investigated transverse thermoelectric properties on ferromagnetic <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mi mathvariant=\"normal\">D</mi><msub><mn>0</mn><mn>3</mn></msub></mrow></math>-type Heusler compounds <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>Fe</mi><mn>3</mn></msub><mi>Si</mi></mrow></math> based on first-principles calculations. We found large transverse thermoelectric conductivity <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><msub><mi>α</mi><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>∼</mo><mn>5</mn><mspace width=\"4pt\"></mspace><msup><mrow><mi>AK</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup><msup><mrow><mi mathvariant=\"normal\">m</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math> is realized with hole carrier doping at room temperature. We also clarified that the nodal line and its stationary point enhance transverse thermoelectric conductivity. These results give us a clue to design high-performance ANE-based magnetic thermoelectric materials.","PeriodicalId":20545,"journal":{"name":"Physical Review Materials","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nodal line induced large transverse thermoelectric response in the D03-type Heusler compound Fe3Si\",\"authors\":\"Susumu Minami, Sota Hogaki, Takahiro Shimada\",\"doi\":\"10.1103/physrevmaterials.8.075403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Giant magnetic transverse thermoelectric effect, anomalous Nernst effect (ANE), was theoretically and experimentally observed in <math xmlns=\\\"http://www.w3.org/1998/Math/MathML\\\"><mrow><mn>3</mn><mi>d</mi></mrow></math>-transition metal compounds. The intrinsic components of ANE can be described from the electronic structure based on the Berry phase concept. The topological electronic structure, such as the Weyl node and nodal lines, induces large Berry curvature, one origin of giant ANE. We investigated transverse thermoelectric properties on ferromagnetic <math xmlns=\\\"http://www.w3.org/1998/Math/MathML\\\"><mrow><mi mathvariant=\\\"normal\\\">D</mi><msub><mn>0</mn><mn>3</mn></msub></mrow></math>-type Heusler compounds <math xmlns=\\\"http://www.w3.org/1998/Math/MathML\\\"><mrow><msub><mi>Fe</mi><mn>3</mn></msub><mi>Si</mi></mrow></math> based on first-principles calculations. We found large transverse thermoelectric conductivity <math xmlns=\\\"http://www.w3.org/1998/Math/MathML\\\"><mrow><msub><mi>α</mi><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>∼</mo><mn>5</mn><mspace width=\\\"4pt\\\"></mspace><msup><mrow><mi>AK</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup><msup><mrow><mi mathvariant=\\\"normal\\\">m</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math> is realized with hole carrier doping at room temperature. We also clarified that the nodal line and its stationary point enhance transverse thermoelectric conductivity. These results give us a clue to design high-performance ANE-based magnetic thermoelectric materials.\",\"PeriodicalId\":20545,\"journal\":{\"name\":\"Physical Review Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2024-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physical Review Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1103/physrevmaterials.8.075403\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Review Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1103/physrevmaterials.8.075403","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Nodal line induced large transverse thermoelectric response in the D03-type Heusler compound Fe3Si
Giant magnetic transverse thermoelectric effect, anomalous Nernst effect (ANE), was theoretically and experimentally observed in -transition metal compounds. The intrinsic components of ANE can be described from the electronic structure based on the Berry phase concept. The topological electronic structure, such as the Weyl node and nodal lines, induces large Berry curvature, one origin of giant ANE. We investigated transverse thermoelectric properties on ferromagnetic -type Heusler compounds based on first-principles calculations. We found large transverse thermoelectric conductivity is realized with hole carrier doping at room temperature. We also clarified that the nodal line and its stationary point enhance transverse thermoelectric conductivity. These results give us a clue to design high-performance ANE-based magnetic thermoelectric materials.
期刊介绍:
Physical Review Materials is a new broad-scope international journal for the multidisciplinary community engaged in research on materials. It is intended to fill a gap in the family of existing Physical Review journals that publish materials research. This field has grown rapidly in recent years and is increasingly being carried out in a way that transcends conventional subject boundaries. The journal was created to provide a common publication and reference source to the expanding community of physicists, materials scientists, chemists, engineers, and researchers in related disciplines that carry out high-quality original research in materials. It will share the same commitment to the high quality expected of all APS publications.