相互作用石墨烯的剪切粘度

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2024-07-29 DOI:10.1103/physrevb.110.045443
Kitinan Pongsangangan, Pedro Cosme, Emanuele Di Salvo, Lars Fritz
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引用次数: 0

摘要

流体的标志性特性之一是其剪切粘度,除其他外,剪切粘度是抛物线流动曲线通过狭窄通道的原因。近年来,在各种材料系统(尤其是石墨烯)的电子传输测量中,对上述流动曲线的观察越来越多。在本文中,我们从理论角度研究了相互作用石墨烯的剪切粘度。我们同时研究了现象学模型和微观模型,发现二者之间非常吻合。我们的主要发现是集体模式对粘度的贡献相当大,可以等于甚至超过通常认为占主导地位的电子贡献。我们对这一发现如何应用于石墨烯和相关狄拉克材料以外的系统进行了评论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Shear viscosity of interacting graphene
One of the hallmark properties of fluids is their shear viscosity which is, among other things, responsible for parabolic flow profiles through narrow channels. In recent years, there has been a growing number of observations of said flow profiles in electronic transport measurements in a variety of material systems, most notably in graphene. In this paper, we investigate the shear viscosity of interacting graphene from a theoretical point of view. We study both a phenomenological as well as a microscopic model and find excellent agreement between the two. Our main finding is collective modes make a sizable contribution to the viscosity that can equal or even outweigh the electronic contribution that is usually assumed dominant. We comment on how this finding carries over to systems beyond graphene and related Dirac materials.
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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