锂浓度对宽隙 ZnMgO 薄膜二次谐波产生的影响

Lei Meng, Xueyou Yuan, Junjie Gao, Wenkai Liu, Xiao-Guang Yang, T. Zhai, T. Yamada
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摘要

宽带隙氧化锌(ZnMgO)薄膜具有低光传播损耗和可逆偏振的特点,在通过频率转换产生高效深紫外激光方面具有巨大的应用潜力。在这项工作中,我们研究了锂浓度对光带隙约为 3.96 eV 的 a 轴取向 ZnMgO 薄膜二次谐波发生(SHG)的影响。掺入少量锂的 ZnMgO 薄膜的单位厚度 SHG 强度大约是未掺入锂的薄膜的 10.7 倍。锂的加入明显扩大了(11-20)面的平面间距,并将漏电流降低了 3 个数量级。X 射线光电子能谱测量结果表明,锂的加入通过增强电子极化来提高 SHG。这些发现揭示了氧八面体中基于锂间隙的缺陷配合物在光频电场下增强宽隙 ZnMgO 薄膜的非线性极化方面起着非常重要的作用。
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Effect of Li concentration on second harmonic generation from widegap ZnMgO thin films
Widegap ZnMgO thin films hold great potential for applications to high-efficiency generation of deep ultraviolet laser via frequency conversion, because of low light propagation loss and reversible polarization. In this work, we studied the effect of Li concentration on the second harmonic generation (SHG) of a-axis oriented ZnMgO thin films with an optical bandgap of about 3.96 eV. The SHG intensity per unit thickness from the ZnMgO thin film with a small Li concentration is approximately 10.7 times larger than the one without Li incorporation. The Li incorporation obviously enlarges interplanar spacing of (11-20) plane and reduces leakage current by 3 orders of magnitude. X-ray photoelectron spectroscopy measurements suggest the Li incorporation enhances SHG via enhancing electronic polarization. These findings uncover defect complexes based on Li interstitials in oxygen octahedron play a very important role in enhancing the nonlinear polarization of widegap ZnMgO thin films under optical frequency electric field.
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