Investigation of Optical and Electric Properties of Post-Annealed Graphene: In2O3:ZnO Thin Film

An investigation of the optical and electric properties of post-annealed In2O3:ZnO:Graphene thin films was performed using a thermionic vacuum arc thin film deposition technology. The post-annealed effects were defined by an investigation of the sample's optical and electric properties. The lowest band gap value of 3.22 eV for the deposited thin film was obtained. Deposited thin films were transparent. The sample AA2 can be used as a transparent conductive oxide material with a resistance of 95 /cm. Sample AA2 was annealed at 400°C for 30 min, and sample AA1 was annealed at 150°C for 15 min. The graphene peaks for the samples were detected using a Fourier transform infrared spectra. The indium and zinc atomic ratios of the sample were approximately 2% and 10%, respectively. As a result, the deposited sample AA2 is a good candidate for use as transparent conductive oxide. Deposited films have high transparency and relatively low resistance. Finally, graphene is a good doping material for semiconductors.