Au/AlCu/SiO2/p-Si/Al 新型结构的阻抗光谱和电学特性

A. Ashery, Samia Gad
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引用次数: 0

摘要

Au/AlCu/SiO2/p-Si/Al 是通过液相外延(LPE)技术合成的新型组件。利用阻抗光谱法,这些结构的电特性和介电特性被表征为电压、频率和温度的函数。在不同温度、电压和频率下,阻抗曲线的所有实部在较高频率下形成小峰值。在低频和中频,阻抗 Z' 的实部与频率无关。在 Z՝՝ 的所有曲线中,不同电压、频率和温度下的阻抗虚部在低频时都是正值。在 lnf = 5 时,Z''为负值并产生峰值。Z'' 值的增长与温度的下降一致,在高频率下,Z''形成正值和负值的峰值。研究了不同温度和电压下的 Col-Col 图。采用传统的 Cheung 和 Nord 方法研究了串联电阻 Rs、势垒高度和意向系数 n 等电学因素。
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Impedance Spectroscopy and Electrical Properties of Novel Structure of Au/AlCu/SiO2/p-Si/Al
Au/AlCu/SiO2/p-Si/Al is a novel assembly synthesized by the technology of liquid phase epitaxy (LPE). Using impedance spectroscopy the electric and dielectric properties of these structures have been characterized as a function of voltage, frequency, and temperature. All real parts of the impedance curve at different temperatures, voltages, and frequencies formed small peaks at higher frequencies. At low and mid frequencies, the real part of impedance Z' is independent of frequencies. For all curves of Z՝՝, the imaginary parts of the impedance at dissimilar voltages, frequencies, and temperatures have positive values at low frequencies. At lnf = 5 the Z'' have negative values and create peaks. The growth of Z'' value was consistent with decline temperatures, at high frequencies, the Z'' formed peaks with positive and negative values. The Col-Col diagram, at different temperatures and voltages, was investigated. The conventional Cheung and Nord methods were applied to study the electric factors such as series resistance Rs, barrier height and ideality factor n.
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