Tomoki Hotta, Kengo Takase, Le Duc Anh, Masaaki Tanaka
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引用次数: 0
摘要
我们研究了重度铁掺杂的四元合金铁磁性半导体 (In0.84-x ,Ga x ,Fe0.16)Sb 薄膜（镓含量 x = 2-10%，铁含量固定为 16%）的外延生长和物理性质。(In0.84-x,Ga x ,Fe0.16)Sb薄膜具有锌混合物型晶体结构，没有任何其他第二相，所有样品都表现出高居里温度（> 300 K）的本征铁磁性。研究发现，(In0.84-x ,Ga x ,Fe0.16)Sb 薄膜的载流子类型会随着 x 的变化而改变，并给出了(In,Ga,Fe)Sb 的载流子类型相图。这些结果表明，(In,Ga,Fe)Sb 是一种很有前途的半导体自旋电子器件材料，如在室温下工作的铁磁 p-n 结。
We study epitaxial growth and physical properties of heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In0.84-x
,Ga
x
,Fe0.16)Sb thin films (Ga content x = 2–10%, Fe content fixed at 16%). The (In0.84-x
,Ga
x
,Fe0.16)Sb films have a zinc-blende-type crystal structure without any other second phase, and all the samples exhibit intrinsic ferromagnetism with high Curie temperature (> 300 K). The carrier type of the (In0.84-x
,Ga
x
,Fe0.16)Sb films is found to be changed by varying x, and a carrier-type phase diagram of (In,Ga,Fe)Sb is presented. These results suggest that (In,Ga,Fe)Sb is a promising material for semiconductor spintronic devices, such as ferromagnetic p-n junctions operating at room temperature.
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