用于未来 XFEL 高帧率和高动态 X 射线成像的 11 位 SAR ADC

Z. Ji, X. Ju, S. Lu, S. Liu, T. Sun, S. Zhang, Z. Sheng, F. Gan, Z. Liu, T. Wang
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引用次数: 0

摘要

本文介绍了适合在像素读出芯片中大规模片上集成的 11 位逐次逼近寄存器 (SAR) ADC 的设计和测试结果。其目的是为未来 X 射线自由电子激光(XFEL)设施的 X 射线像素探测器建立新的数字读出架构,同时实现高帧速率和高动态范围。原型芯片采用 130 纳米 CMOS 工艺设计和制造,核心电路占地约 0.034 平方毫米。测得的差分非线性(DNL)和积分非线性(INL)分别为 +0.78/-0.78 LSB 和 +0.58/-0.52 LSB。在 2 MS/s 时,信噪失真比 (SINAD) 为 61.6 dB,有效比特数 (ENOB) 为 ~ 9.94-bit。在 1.2 V 电源电压下,2 MS/s 时的核心电路功耗为 47 μW。
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An 11-bit SAR ADC for high frame rate and high-dynamic X-ray imaging at future XFELs
The paper presents the design and test results of an 11-bit successive approximation register (SAR) ADC, suitable for massive on-chip integration in a pixel readout chip. The objective is to establish new digital readout architectures for X-ray pixel detectors at future X-ray free electron laser (XFEL) facilities, enabling high frame rates and a high dynamic range simultaneously. The prototype chip has been designed and fabricated in a 130 nm CMOS process, with the core circuit occupying an area of ~ 0.034 mm2. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are +0.78/-0.78 LSB and +0.58/-0.52 LSB, respectively. The signal-to-noise-and-distortion ratio (SINAD) is 61.6 dB at 2 MS/s, achieving an effective number of bit (ENOB) of ~ 9.94-bit. The core circuit power consumption is 47 μW at 2 MS/s with a 1.2 V supply.
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