Jouda Jemaa Khabthani, Khouloud Chika, Ghassen Jemaï, Didier Mayou, Guy Trambly de Laissardière
{"title":"功能化多层黑色磷烯的电子结构和电导率","authors":"Jouda Jemaa Khabthani, Khouloud Chika, Ghassen Jemaï, Didier Mayou, Guy Trambly de Laissardière","doi":"10.1103/physrevb.110.045150","DOIUrl":null,"url":null,"abstract":"Phosphorene and its components are highly reactive to oxygen when exposed to ambient conditions due to the presence of lone pairs of electrons on phosphorus atoms. Functionalization serves as a solution to prevent the chemical degradation of these materials. In this paper, we investigate the impact of relatively strong covalent or noncovalent functionalization on phosphorene [monolayer black phosphorus (BP)], few-layer BP, and bulk BP. We use an effective tight-binding Hamiltonian that corresponds to one orbital per site, wherein covalent functionalization is simulated by atomic vacancies, and noncovalent functionalization is simulated by Anderson disorder. We demonstrate that these two types of functionalization act differently on the electronic structure and quantum diffusion, particularly affecting the gap and mobility characteristics, especially with a high degree of functionalization. However, we also show that the mobility gap is not significantly modified by the two types of defects. We also analyze the electron-hole asymmetry that is more important for multilayer and bulk BP.","PeriodicalId":20082,"journal":{"name":"Physical Review B","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electronic structure and conductivity in functionalized multilayer black phosphorene\",\"authors\":\"Jouda Jemaa Khabthani, Khouloud Chika, Ghassen Jemaï, Didier Mayou, Guy Trambly de Laissardière\",\"doi\":\"10.1103/physrevb.110.045150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Phosphorene and its components are highly reactive to oxygen when exposed to ambient conditions due to the presence of lone pairs of electrons on phosphorus atoms. Functionalization serves as a solution to prevent the chemical degradation of these materials. In this paper, we investigate the impact of relatively strong covalent or noncovalent functionalization on phosphorene [monolayer black phosphorus (BP)], few-layer BP, and bulk BP. We use an effective tight-binding Hamiltonian that corresponds to one orbital per site, wherein covalent functionalization is simulated by atomic vacancies, and noncovalent functionalization is simulated by Anderson disorder. We demonstrate that these two types of functionalization act differently on the electronic structure and quantum diffusion, particularly affecting the gap and mobility characteristics, especially with a high degree of functionalization. However, we also show that the mobility gap is not significantly modified by the two types of defects. We also analyze the electron-hole asymmetry that is more important for multilayer and bulk BP.\",\"PeriodicalId\":20082,\"journal\":{\"name\":\"Physical Review B\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physical Review B\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1103/physrevb.110.045150\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Physics and Astronomy\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Review B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1103/physrevb.110.045150","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Physics and Astronomy","Score":null,"Total":0}
引用次数: 0
摘要
由于磷原子上存在孤对电子,磷化物及其成分在环境条件下对氧气具有高活性。官能化是防止这些材料化学降解的一种解决方案。在本文中,我们研究了相对较强的共价或非共价官能化对磷烯[单层黑磷 (BP)]、少层 BP 和块状 BP 的影响。我们使用了一个有效的紧密结合哈密顿,该哈密顿对应于每个位点的一个轨道,其中共价官能化是通过原子空位来模拟的,而非共价官能化是通过安德森无序来模拟的。我们证明了这两种官能化对电子结构和量子扩散的不同作用,尤其是对间隙和迁移率特性的影响,特别是在官能化程度较高的情况下。不过,我们也表明,这两种缺陷对迁移率间隙的影响并不明显。我们还分析了对多层和块体 BP 更为重要的电子-空穴不对称性。
Electronic structure and conductivity in functionalized multilayer black phosphorene
Phosphorene and its components are highly reactive to oxygen when exposed to ambient conditions due to the presence of lone pairs of electrons on phosphorus atoms. Functionalization serves as a solution to prevent the chemical degradation of these materials. In this paper, we investigate the impact of relatively strong covalent or noncovalent functionalization on phosphorene [monolayer black phosphorus (BP)], few-layer BP, and bulk BP. We use an effective tight-binding Hamiltonian that corresponds to one orbital per site, wherein covalent functionalization is simulated by atomic vacancies, and noncovalent functionalization is simulated by Anderson disorder. We demonstrate that these two types of functionalization act differently on the electronic structure and quantum diffusion, particularly affecting the gap and mobility characteristics, especially with a high degree of functionalization. However, we also show that the mobility gap is not significantly modified by the two types of defects. We also analyze the electron-hole asymmetry that is more important for multilayer and bulk BP.
期刊介绍:
Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide.
PRB covers the full range of condensed matter, materials physics, and related subfields, including:
-Structure and phase transitions
-Ferroelectrics and multiferroics
-Disordered systems and alloys
-Magnetism
-Superconductivity
-Electronic structure, photonics, and metamaterials
-Semiconductors and mesoscopic systems
-Surfaces, nanoscience, and two-dimensional materials
-Topological states of matter