NbI4 中的准一维滑动铁电性

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2024-07-31 DOI:10.1103/physrevb.110.024115
Ning Ding, Haoshen Ye, Shuai Dong
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引用次数: 0

摘要

滑动铁电最初是为了阐明非极性范德华层的特定堆积排列所产生的面外极化而提出的。然而,滑动铁电的概念可以推广到更多几何形状。在此,我们从理论上证明了 NbI4 块体是一种准一维滑动铁电材料,其垂直于 Nb 链的极化为 0.11µC/cm2。研究发现,最可能的铁电转换途径是通过链间沿链方向的滑动,而其他途径,如 Nb 对的 Peierls 二聚化,也可能起作用。此外,在高达 10GPa 的静水压力下,NbI4 的极化可增强 82%,超过这一压力,NbI4 就会变成极性金属。此外,还可以预测负纵向压电性。
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Quasi-one-dimensional sliding ferroelectricity in NbI4
Sliding ferroelectricity was originally proposed to elucidate the out-of-plane polarization generated by a specific stacking arrangement of nonpolar van der Waals layers. However, the concept of sliding ferroelectricity can be generalized to more geometries. Here, the NbI4 bulk is theoretically demonstrated as a quasi-one-dimensional sliding ferroelectric material, which exhibits a polarization of 0.11µC/cm2 perpendicular to the Nb's chains. The most possible ferroelectric switching path is found to be via the interchain sliding along the chain direction, while other paths such as Peierls dimerization of Nb pairs may also work. Moreover, its polarization can be augmented for 82% by hydrostatic pressure up to 10GPa, beyond which NbI4 becomes a polar metal. In addition, negative longitudinal piezoelectricity is also predicted.
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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