{"title":"缺陷工程 4H-SiC(0001) 上石墨烯霍尔效应传感器的高温热稳定性","authors":"Tymoteusz Ciuk;Corinne Nouvellon;Fabien Monteverde;Beata Stańczyk;Krystyna Przyborowska;Dariusz Czołak;Semir El-Ahmar","doi":"10.1109/LED.2024.3436050","DOIUrl":null,"url":null,"abstract":"In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al\n<sub>2</sub>\nO\n<sub>3</sub>\n-passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity on-axis 4H-SiC(0001), pre-epitaxially modified with 5-keV hydrogen (H\n<sup>+</sup>\n) ions. The sensor operates between 305 K and 770 K, with a current-mode sensitivity of ~75 V/AT and thermal stability below 0.15 %/K (\n<inline-formula> <tex-math>$\\leqslant ~0.03$ </tex-math></inline-formula>\n %/K in a narrower range between 305 K and 700 K). It is a promising two-dimensional platform for high-temperature magnetic diagnostics and plasma control systems for modern tokamak fusion reactors.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10616005","citationCount":"0","resultStr":"{\"title\":\"High-Temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-Engineered 4H-SiC(0001)\",\"authors\":\"Tymoteusz Ciuk;Corinne Nouvellon;Fabien Monteverde;Beata Stańczyk;Krystyna Przyborowska;Dariusz Czołak;Semir El-Ahmar\",\"doi\":\"10.1109/LED.2024.3436050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al\\n<sub>2</sub>\\nO\\n<sub>3</sub>\\n-passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity on-axis 4H-SiC(0001), pre-epitaxially modified with 5-keV hydrogen (H\\n<sup>+</sup>\\n) ions. The sensor operates between 305 K and 770 K, with a current-mode sensitivity of ~75 V/AT and thermal stability below 0.15 %/K (\\n<inline-formula> <tex-math>$\\\\leqslant ~0.03$ </tex-math></inline-formula>\\n %/K in a narrower range between 305 K and 700 K). It is a promising two-dimensional platform for high-temperature magnetic diagnostics and plasma control systems for modern tokamak fusion reactors.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10616005\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10616005/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10616005/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
在这封信中，我们展示了一种霍尔效应传感器，该传感器采用了非晶-Al2O3-钝化无转移 p 型氢掺杂准独立外延化学气相沉积石墨烯技术，该石墨烯位于半绝缘高纯度 4H-SiC(0001) 轴上，并用 5-keV 氢 (H+) 离子进行了预外延修饰。该传感器的工作温度范围为 305 K 至 770 K，电流模式灵敏度为 ~75 V/AT，热稳定性低于 0.15 %/K（在 305 K 至 700 K 的较窄范围内为 ~0.03$ %/K）。它是现代托卡马克聚变反应堆高温磁诊断和等离子体控制系统的一个很有前途的二维平台。
High-Temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-Engineered 4H-SiC(0001)
In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al
2
O
3
-passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity on-axis 4H-SiC(0001), pre-epitaxially modified with 5-keV hydrogen (H
+
) ions. The sensor operates between 305 K and 770 K, with a current-mode sensitivity of ~75 V/AT and thermal stability below 0.15 %/K (
$\leqslant ~0.03$
%/K in a narrower range between 305 K and 700 K). It is a promising two-dimensional platform for high-temperature magnetic diagnostics and plasma control systems for modern tokamak fusion reactors.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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