Xinran Yang, He Zhu, Yi Zhao, Zubin Chen, Feng Sun, Xi Zhu
{"title":"在 45 纳米 SOI CMOS 技术中实现 1.6 分贝插入损耗和 47 分贝上顶带抑制的二阶带通滤波器","authors":"Xinran Yang, He Zhu, Yi Zhao, Zubin Chen, Feng Sun, Xi Zhu","doi":"10.1109/led.2024.3435697","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 2nd-order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology\",\"authors\":\"Xinran Yang, He Zhu, Yi Zhao, Zubin Chen, Feng Sun, Xi Zhu\",\"doi\":\"10.1109/led.2024.3435697\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-07-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/led.2024.3435697\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/led.2024.3435697","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.