{"title":"通过宽温特性分析 Hf$_{text{0}.\\text{5}}$Zr$_{text{0}.\\text{5}}$O$_{text{2}}$ 铁电薄膜中的印记相关保持损耗","authors":"Xiaopeng Li;Lu Tai;Pengpeng Sang;Xiaoyu Dou;Xuepeng Zhan;Hao Xu;Xiaolei Wang;Jixuan Wu;Jiezhi Chen","doi":"10.1109/TED.2024.3433317","DOIUrl":null,"url":null,"abstract":"To address the concerns on the retention loss of HfO2-based ferroelectric (FE) devices in versatile applications, we conduct a comprehensive wide temperature range (250–400 K) characterization on a 9-nm Hf0.5Zr0.5O2 (HZO) film. It reveals that the retention will be damaged by the high temperature and incomplete polarization (fast speed and low amplitude operation). The dominant mechanism is believed to be the imprint effect, which occurs due to the migration of charged defects to the interface along the internal field caused by incomplete polarization. By addressing the intricacies of imprint behaviors and incomplete polarization, this work illuminates crucial aspects of retention loss in FE-HZO thin films.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations\",\"authors\":\"Xiaopeng Li;Lu Tai;Pengpeng Sang;Xiaoyu Dou;Xuepeng Zhan;Hao Xu;Xiaolei Wang;Jixuan Wu;Jiezhi Chen\",\"doi\":\"10.1109/TED.2024.3433317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To address the concerns on the retention loss of HfO2-based ferroelectric (FE) devices in versatile applications, we conduct a comprehensive wide temperature range (250–400 K) characterization on a 9-nm Hf0.5Zr0.5O2 (HZO) film. It reveals that the retention will be damaged by the high temperature and incomplete polarization (fast speed and low amplitude operation). The dominant mechanism is believed to be the imprint effect, which occurs due to the migration of charged defects to the interface along the internal field caused by incomplete polarization. By addressing the intricacies of imprint behaviors and incomplete polarization, this work illuminates crucial aspects of retention loss in FE-HZO thin films.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10616046/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10616046/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations
To address the concerns on the retention loss of HfO2-based ferroelectric (FE) devices in versatile applications, we conduct a comprehensive wide temperature range (250–400 K) characterization on a 9-nm Hf0.5Zr0.5O2 (HZO) film. It reveals that the retention will be damaged by the high temperature and incomplete polarization (fast speed and low amplitude operation). The dominant mechanism is believed to be the imprint effect, which occurs due to the migration of charged defects to the interface along the internal field caused by incomplete polarization. By addressing the intricacies of imprint behaviors and incomplete polarization, this work illuminates crucial aspects of retention loss in FE-HZO thin films.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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