用于基于 DBD 的 222 纳米准分子源的短脉冲宽度高电压双极脉冲发生器

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, FLUIDS & PLASMAS IEEE Transactions on Plasma Science Pub Date : 2024-07-31 DOI:10.1109/TPS.2024.3432192
Subhash Kumar Ram;Brijendra Kumar Verma;Vivek Kumar Saini;Ram Prakash Lamba;Pankaj Kumar Das;Sukumar Mishra;Sachin Devassy;Udit Narayan Pal
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引用次数: 0

摘要

本文为基于介质阻挡放电(DBD)的同轴 222 纳米准分子辐射源设计和开发了一种快速上升时间高压双极脉冲发生器(HV-BIG)系统,以实现有效的等离子体生成。为开发 HV-BIG 系统,利用碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)和升压变压器实现了全桥拓扑结构。为实现高压变压器的初级和次级绕组,设计了分段式绕组。制造出的高压变压器具有初级和次级绕组均匀分布的特点,从而最大限度地减少了漏感。控制算法可产生 180° 相移门控脉冲,其脉冲重复频率和脉宽适合全桥转换器。开发的 HV-BIG 系统实验室原型通过基于 DBD 的氪/氯(Kr/Cl2)激光灯进行了实验验证,以产生输出脉冲电压范围为 ±2.85 至 ±8.25 kV 的 222 nm 辐射。经实验测试,HV-BIG 系统可产生脉冲重复频率为 31.5 kHz 的可变高压双极脉冲输出电压,并可在 1.0 和 1.2~\mu $ s 两种不同的脉宽下进行调谐。
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Short-Pulse Width High-Voltage Bipolar Impulse Generator for DBD-Based 222 nm Excimer Source
In this article, the design and development of a fast rise time high-voltage bipolar impulse generator (HV-BIG) system for a dielectric barrier discharge (DBD)-based coaxial 222 nm excimer radiation source has been carried out for effective plasma generation. Full bridge topology utilizing silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) along with a step-up transformer has been realized for the development of the HV-BIG system. Sectionalized windings were designed to realize the primary and secondary winding of high-voltage transformers. The fabricated high-voltage transformer features a uniform distribution of the primary and secondary windings to minimize leakage inductance. A control algorithm has been implemented to generate 180° phase-shifted gating pulses with suitable pulse repetition frequency and pulsewidth for the full bridge converter. The developed laboratory prototype of the HV-BIG system was experimentally verified with the DBD-based Krypton/Chlorine (Kr/Cl2) excilamp to generate 222 nm radiation with output pulse voltage ranging from ±2.85 to ±8.25 kV. The HV-BIG system has been experimentally tested to generate variable high-voltage bipolar pulse output voltage with a pulse repetition frequency of 31.5 kHz and tunable at two distinct pulsewidth of 1.0 and $1.2~\mu $ s.
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来源期刊
IEEE Transactions on Plasma Science
IEEE Transactions on Plasma Science 物理-物理:流体与等离子体
CiteScore
3.00
自引率
20.00%
发文量
538
审稿时长
3.8 months
期刊介绍: The scope covers all aspects of the theory and application of plasma science. It includes the following areas: magnetohydrodynamics; thermionics and plasma diodes; basic plasma phenomena; gaseous electronics; microwave/plasma interaction; electron, ion, and plasma sources; space plasmas; intense electron and ion beams; laser-plasma interactions; plasma diagnostics; plasma chemistry and processing; solid-state plasmas; plasma heating; plasma for controlled fusion research; high energy density plasmas; industrial/commercial applications of plasma physics; plasma waves and instabilities; and high power microwave and submillimeter wave generation.
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IEEE Transactions on Plasma Science information for authors Blank Page Special Issue on Selected Papers from APSPT-14 May 2027 Fabrication and Characterization of a 10 × 10 cm Cold Atmospheric Pressure Plasma Array. IEEE Transactions on Plasma Science information for authors
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