{"title":"不同关断占空比下具有宽带能力的反 E 类功率放大器","authors":"Akram Sheikhi, Hossein Hemesi, Andrei Grebennikov","doi":"10.1002/cta.4184","DOIUrl":null,"url":null,"abstract":"The paper explores the investigation of an inverse Class‐E amplifier featuring a series output filter across various switch‐off duty ratios <jats:italic>D</jats:italic>. Analysis of different duty ratios as a design parameter reveals their impact on peak switch voltage, output power capability, and maximum operating frequency. Notably, it is demonstrated that adjusting the <jats:italic>D</jats:italic> ratio affects these parameters, with specific emphasis on achieving a maximum normalized switch voltage lower than 2 and an output power capability exceeding 0.1 for <jats:italic>D</jats:italic> = 0.7. Furthermore, the paper considers both parasitic shunt capacitance and series inductor in the load network, a departure from previous works that solely focused on the series inductor. The proposed circuit is highlighted for its ease of implementation compared with conventional reactance compensation circuits employing parallel resonant circuits, which are challenging to form directly. An innovative approach is introduced to showcase the broadband performance of the inverse Class‐E amplifier. The measured drain efficiency and output power versus input power at 430 MHz are 82% and 45.3 dBm, respectively. A similar performance can be achieved within the frequency range of 380–600 MHz by proper tuning at saturated power. The measurement results demonstrate a maximum high power‐added efficiency (PAE) of 79% and drain efficiency of 82% within this frequency range, accompanied by a gain exceeding 12.0 dB and output power surpassing 44 dBm.","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inverse Class‐E power amplifier with broadband capability at different switch‐off duty ratio\",\"authors\":\"Akram Sheikhi, Hossein Hemesi, Andrei Grebennikov\",\"doi\":\"10.1002/cta.4184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper explores the investigation of an inverse Class‐E amplifier featuring a series output filter across various switch‐off duty ratios <jats:italic>D</jats:italic>. Analysis of different duty ratios as a design parameter reveals their impact on peak switch voltage, output power capability, and maximum operating frequency. Notably, it is demonstrated that adjusting the <jats:italic>D</jats:italic> ratio affects these parameters, with specific emphasis on achieving a maximum normalized switch voltage lower than 2 and an output power capability exceeding 0.1 for <jats:italic>D</jats:italic> = 0.7. Furthermore, the paper considers both parasitic shunt capacitance and series inductor in the load network, a departure from previous works that solely focused on the series inductor. The proposed circuit is highlighted for its ease of implementation compared with conventional reactance compensation circuits employing parallel resonant circuits, which are challenging to form directly. An innovative approach is introduced to showcase the broadband performance of the inverse Class‐E amplifier. The measured drain efficiency and output power versus input power at 430 MHz are 82% and 45.3 dBm, respectively. A similar performance can be achieved within the frequency range of 380–600 MHz by proper tuning at saturated power. 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引用次数: 0
摘要
本文探讨了对具有串联输出滤波器的反向 E 类放大器在不同关断占空比 D 下的研究。将不同占空比作为设计参数进行分析,可以发现其对峰值开关电压、输出功率能力和最大工作频率的影响。值得注意的是,本文证明了调整 D 比对这些参数的影响,特别强调了在 D = 0.7 时实现低于 2 的最大归一化开关电压和超过 0.1 的输出功率能力。此外,本文还考虑了负载网络中的寄生并联电容和串联电感,这与之前仅关注串联电感的研究有所不同。与采用并联谐振电路的传统电抗补偿电路相比,本文提出的电路更易于实现,因为直接形成并联谐振电路具有挑战性。为展示反向 E 类放大器的宽带性能,介绍了一种创新方法。在 430 MHz 频率下,测得的漏极效率和输出功率与输入功率之比分别为 82% 和 45.3 dBm。通过在饱和功率下进行适当调谐,在 380-600 MHz 频率范围内也能实现类似的性能。测量结果表明,在这一频率范围内,功率附加效率(PAE)最高可达 79%,漏极效率最高可达 82%,增益超过 12.0 dB,输出功率超过 44 dBm。
Inverse Class‐E power amplifier with broadband capability at different switch‐off duty ratio
The paper explores the investigation of an inverse Class‐E amplifier featuring a series output filter across various switch‐off duty ratios D. Analysis of different duty ratios as a design parameter reveals their impact on peak switch voltage, output power capability, and maximum operating frequency. Notably, it is demonstrated that adjusting the D ratio affects these parameters, with specific emphasis on achieving a maximum normalized switch voltage lower than 2 and an output power capability exceeding 0.1 for D = 0.7. Furthermore, the paper considers both parasitic shunt capacitance and series inductor in the load network, a departure from previous works that solely focused on the series inductor. The proposed circuit is highlighted for its ease of implementation compared with conventional reactance compensation circuits employing parallel resonant circuits, which are challenging to form directly. An innovative approach is introduced to showcase the broadband performance of the inverse Class‐E amplifier. The measured drain efficiency and output power versus input power at 430 MHz are 82% and 45.3 dBm, respectively. A similar performance can be achieved within the frequency range of 380–600 MHz by proper tuning at saturated power. The measurement results demonstrate a maximum high power‐added efficiency (PAE) of 79% and drain efficiency of 82% within this frequency range, accompanied by a gain exceeding 12.0 dB and output power surpassing 44 dBm.
期刊介绍:
The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.