{"title":"用于彩色感光器的光控阈值开关记忆神经元器件","authors":"Xuanyu Shan;Zhiyong Liu;Ye Tao;Yongjun Dong;Zhongqiang Wang;Jingyao Bian;Xiaoning Zhao;Ya Lin;Haiyang Xu;Yichun Liu","doi":"10.1109/LED.2024.3435437","DOIUrl":null,"url":null,"abstract":"Neuromorphic photoreceptors have been extremely beneficial in developing high energy-efficient intelligent systems. There is a strong need for electron devices to mimic the photoreceptors that could recognize the coloring information. Herein, we propose a wavelength dependent light tunable threshold switching memristive neuron devices based on Ta\n<sub>2</sub>\nO\n<sub>5</sub>\n:Ag nanocomposites. The threshold voltage of the device can be accurately controlled by light stimulation of different wavelength. The physical mechanism could be attributed to the effects of localized surface plasmon resonance (LSPR) effect. Moreover, the artificial leaky integrate and fire (LIF) neurons based on the memristive devices can directly convert light signal into spike sequence according to the light wavelength. Then, the color photoreceptor is finally realized based on the wavelength dependence of the neuronal spike rates.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Light-Controlled Threshold Switching Memristive Neuron Devices for Color Photoreceptor\",\"authors\":\"Xuanyu Shan;Zhiyong Liu;Ye Tao;Yongjun Dong;Zhongqiang Wang;Jingyao Bian;Xiaoning Zhao;Ya Lin;Haiyang Xu;Yichun Liu\",\"doi\":\"10.1109/LED.2024.3435437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Neuromorphic photoreceptors have been extremely beneficial in developing high energy-efficient intelligent systems. There is a strong need for electron devices to mimic the photoreceptors that could recognize the coloring information. Herein, we propose a wavelength dependent light tunable threshold switching memristive neuron devices based on Ta\\n<sub>2</sub>\\nO\\n<sub>5</sub>\\n:Ag nanocomposites. The threshold voltage of the device can be accurately controlled by light stimulation of different wavelength. The physical mechanism could be attributed to the effects of localized surface plasmon resonance (LSPR) effect. Moreover, the artificial leaky integrate and fire (LIF) neurons based on the memristive devices can directly convert light signal into spike sequence according to the light wavelength. Then, the color photoreceptor is finally realized based on the wavelength dependence of the neuronal spike rates.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10614232/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614232/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Light-Controlled Threshold Switching Memristive Neuron Devices for Color Photoreceptor
Neuromorphic photoreceptors have been extremely beneficial in developing high energy-efficient intelligent systems. There is a strong need for electron devices to mimic the photoreceptors that could recognize the coloring information. Herein, we propose a wavelength dependent light tunable threshold switching memristive neuron devices based on Ta
2
O
5
:Ag nanocomposites. The threshold voltage of the device can be accurately controlled by light stimulation of different wavelength. The physical mechanism could be attributed to the effects of localized surface plasmon resonance (LSPR) effect. Moreover, the artificial leaky integrate and fire (LIF) neurons based on the memristive devices can directly convert light signal into spike sequence according to the light wavelength. Then, the color photoreceptor is finally realized based on the wavelength dependence of the neuronal spike rates.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.