{"title":"纳米结构对(111)取向纳米铜直接键合的键合机理和机械响应影响的原子模拟","authors":"Cheng-Da Wu, Chien-Fu Liao","doi":"10.1063/5.0217053","DOIUrl":null,"url":null,"abstract":"Low-temperature, low-pressure Cu-to-Cu direct bonding technology is a promising solution for next-generation high-density interconnects. Previous studies have shown that many properties of nanomaterials are determined by their structural characteristics. Therefore, the effect of the nanostructure (i.e., twin crystal and twin boundary, TB, sizes) on the bonding mechanism and mechanical response of the direct bonding of (111)-oriented nanotwinned Cu (NT-Cu) is studied using molecular dynamics simulations, where TB size means the TB layer thickness in terms of the number of atoms. The simulation results show that NT-Cu with extremely small twin crystals (e.g., 0.625 nm) have poor diffusivity. The number of dislocations induced by plastic deformation increases with increasing twin crystal size during stretching processes, degrading mechanical strength. The strain hardening of bonded NT-Cu with extremely small twin crystals (e.g., 0.625 nm) is dominated by the strong barrier created by a high density of TBs, whereas that with twin crystal sizes of 2.5–10 nm is dominated by dislocation–TB and dislocation–grain boundary interactions. Bonded NT-Cu with 2–6 atoms per TB layer exhibits softening at initial plastic deformation due to the onset of partial collapse of TBs; however, the strength then significantly increases with a further increase in strain due to strain hardening.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomistic simulations of effects of nanostructure on bonding mechanism and mechanical response of direct bonding of (111)-oriented nanotwinned Cu\",\"authors\":\"Cheng-Da Wu, Chien-Fu Liao\",\"doi\":\"10.1063/5.0217053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-temperature, low-pressure Cu-to-Cu direct bonding technology is a promising solution for next-generation high-density interconnects. Previous studies have shown that many properties of nanomaterials are determined by their structural characteristics. Therefore, the effect of the nanostructure (i.e., twin crystal and twin boundary, TB, sizes) on the bonding mechanism and mechanical response of the direct bonding of (111)-oriented nanotwinned Cu (NT-Cu) is studied using molecular dynamics simulations, where TB size means the TB layer thickness in terms of the number of atoms. The simulation results show that NT-Cu with extremely small twin crystals (e.g., 0.625 nm) have poor diffusivity. The number of dislocations induced by plastic deformation increases with increasing twin crystal size during stretching processes, degrading mechanical strength. The strain hardening of bonded NT-Cu with extremely small twin crystals (e.g., 0.625 nm) is dominated by the strong barrier created by a high density of TBs, whereas that with twin crystal sizes of 2.5–10 nm is dominated by dislocation–TB and dislocation–grain boundary interactions. Bonded NT-Cu with 2–6 atoms per TB layer exhibits softening at initial plastic deformation due to the onset of partial collapse of TBs; however, the strength then significantly increases with a further increase in strain due to strain hardening.\",\"PeriodicalId\":15088,\"journal\":{\"name\":\"Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0217053\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0217053","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Atomistic simulations of effects of nanostructure on bonding mechanism and mechanical response of direct bonding of (111)-oriented nanotwinned Cu
Low-temperature, low-pressure Cu-to-Cu direct bonding technology is a promising solution for next-generation high-density interconnects. Previous studies have shown that many properties of nanomaterials are determined by their structural characteristics. Therefore, the effect of the nanostructure (i.e., twin crystal and twin boundary, TB, sizes) on the bonding mechanism and mechanical response of the direct bonding of (111)-oriented nanotwinned Cu (NT-Cu) is studied using molecular dynamics simulations, where TB size means the TB layer thickness in terms of the number of atoms. The simulation results show that NT-Cu with extremely small twin crystals (e.g., 0.625 nm) have poor diffusivity. The number of dislocations induced by plastic deformation increases with increasing twin crystal size during stretching processes, degrading mechanical strength. The strain hardening of bonded NT-Cu with extremely small twin crystals (e.g., 0.625 nm) is dominated by the strong barrier created by a high density of TBs, whereas that with twin crystal sizes of 2.5–10 nm is dominated by dislocation–TB and dislocation–grain boundary interactions. Bonded NT-Cu with 2–6 atoms per TB layer exhibits softening at initial plastic deformation due to the onset of partial collapse of TBs; however, the strength then significantly increases with a further increase in strain due to strain hardening.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces