用于电压控制负电容和 6G 技术的锑化钡薄膜的特性分析和高频应用

IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Physica Status Solidi A-applications and Materials Science Pub Date : 2024-08-02 DOI:10.1002/pssa.202400449
Atef Fayez Qasrawi
{"title":"用于电压控制负电容和 6G 技术的锑化钡薄膜的特性分析和高频应用","authors":"Atef Fayez Qasrawi","doi":"10.1002/pssa.202400449","DOIUrl":null,"url":null,"abstract":"Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10<jats:sup>−5</jats:sup> mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01–1.80 GHz. The films display features of voltage‐controlled negative capacitance source (VCNC) and resonance–antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high‐frequency capacitance value of 2.8 nF, a density of oscillators of 4 × 10<jats:sup>10</jats:sup> cm<jats:sup>−3</jats:sup>, and a scattering time constant of τ = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high‐frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance–antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin‐film transistors and 6 G technology applications.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"43 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology\",\"authors\":\"Atef Fayez Qasrawi\",\"doi\":\"10.1002/pssa.202400449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10<jats:sup>−5</jats:sup> mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01–1.80 GHz. The films display features of voltage‐controlled negative capacitance source (VCNC) and resonance–antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high‐frequency capacitance value of 2.8 nF, a density of oscillators of 4 × 10<jats:sup>10</jats:sup> cm<jats:sup>−3</jats:sup>, and a scattering time constant of τ = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high‐frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance–antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin‐film transistors and 6 G technology applications.\",\"PeriodicalId\":20074,\"journal\":{\"name\":\"Physica Status Solidi A-applications and Materials Science\",\"volume\":\"43 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi A-applications and Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400449\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400449","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本文采用热沉积技术,在 10-5 毫巴的真空压力下制作了锑化钡(BaSb)薄膜。钡锑薄膜呈现出正方晶格。在很宽的扫描范围内,薄膜大部分都是化学计量的,钡和锑的原子含量分别为 50.17% 和 49.83%。这些薄膜的形态分析表明,生长出了尺寸在 1.64 至 4.14 μm 之间的大晶粒。Ag/BaSb/Ag 薄膜的动态电学测量在 0.01-1.80 GHz 的频域内进行。薄膜显示出电压控制负电容源(VCNC)和临界频率为 1.64 GHz 的共振-反共振峰的特征。对这些峰值的洛伦兹模型光谱分析表明,它们对应的高频电容值为 2.8 nF,振荡器密度为 4 × 1010 cm-3,散射时间常数为 τ = 100 ns。此外,Ag/BaSb/Ag 薄膜的截止频率频谱变化很大,适合高频应用。随着驱动频率从 1.0 GHz 到 1.64 GHz 的增加,截止频率从 2.6 GHz 到 1.0 THz 不等。VCNC 源、共振-反共振行为和高截止频率等特性使 BaSb 薄膜在薄膜晶体管和 6 G 技术应用中大有可为。
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Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology
Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10−5 mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01–1.80 GHz. The films display features of voltage‐controlled negative capacitance source (VCNC) and resonance–antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high‐frequency capacitance value of 2.8 nF, a density of oscillators of 4 × 1010 cm−3, and a scattering time constant of τ = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high‐frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance–antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin‐film transistors and 6 G technology applications.
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来源期刊
CiteScore
3.70
自引率
5.00%
发文量
393
审稿时长
2 months
期刊介绍: The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.
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