半金属电子产品的兴起

Enzi Zhai, Tianyu Liang, Ruizi Liu, Mingyang Cai, Ran Li, Qiming Shao, Cong Su, Yuxuan Cosmi Lin
{"title":"半金属电子产品的兴起","authors":"Enzi Zhai, Tianyu Liang, Ruizi Liu, Mingyang Cai, Ran Li, Qiming Shao, Cong Su, Yuxuan Cosmi Lin","doi":"10.1038/s44287-024-00068-z","DOIUrl":null,"url":null,"abstract":"Semi-metals present unique transport properties due to their distinctive band structures and topological properties, leading to an emergence of semi-metal-based electronic applications. Specifically, these properties include intrinsic low density of states at the Fermi level, the linear dispersion electronic structure and the symmetry breaking in the momentum space, which can be harnessed for improved functionality, energy efficiency and form factor in electronic devices. In this Review, we examine the fundamental properties and devices based on semi-metals and their heterojunctions for electronics applications. We then discuss advanced logic, analogue, memory and interconnect technologies enabled by the physical properties of semi-metals and benchmark them against the state-of-the-art technologies. Finally, we outline the remaining challenges and future perspectives of practical applications of semi-metal heterojunction electronics. This Review examines the unique electronic properties of semi-metals and their microelectronics applications, highlighting recent advancements, challenges and future prospects for semi-metal-based technologies in logic, memory, interconnects and high-frequency devices.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"1 8","pages":"497-515"},"PeriodicalIF":0.0000,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The rise of semi-metal electronics\",\"authors\":\"Enzi Zhai, Tianyu Liang, Ruizi Liu, Mingyang Cai, Ran Li, Qiming Shao, Cong Su, Yuxuan Cosmi Lin\",\"doi\":\"10.1038/s44287-024-00068-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semi-metals present unique transport properties due to their distinctive band structures and topological properties, leading to an emergence of semi-metal-based electronic applications. Specifically, these properties include intrinsic low density of states at the Fermi level, the linear dispersion electronic structure and the symmetry breaking in the momentum space, which can be harnessed for improved functionality, energy efficiency and form factor in electronic devices. In this Review, we examine the fundamental properties and devices based on semi-metals and their heterojunctions for electronics applications. We then discuss advanced logic, analogue, memory and interconnect technologies enabled by the physical properties of semi-metals and benchmark them against the state-of-the-art technologies. Finally, we outline the remaining challenges and future perspectives of practical applications of semi-metal heterojunction electronics. This Review examines the unique electronic properties of semi-metals and their microelectronics applications, highlighting recent advancements, challenges and future prospects for semi-metal-based technologies in logic, memory, interconnects and high-frequency devices.\",\"PeriodicalId\":501701,\"journal\":{\"name\":\"Nature Reviews Electrical Engineering\",\"volume\":\"1 8\",\"pages\":\"497-515\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Reviews Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.nature.com/articles/s44287-024-00068-z\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00068-z","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

半金属因其独特的带状结构和拓扑特性而具有独特的传输特性,从而催生了基于半金属的电子应用。具体来说,这些特性包括费米级的固有低态密度、线性色散电子结构和动量空间的对称性破缺,这些特性可用于改善电子器件的功能、能效和外形尺寸。在本综述中,我们将探讨基于半金属及其异质结的电子应用的基本特性和器件。然后,我们将讨论利用半金属的物理特性实现的先进逻辑、模拟、存储器和互连技术,并将这些技术与最先进的技术进行比较。最后,我们概述了半金属异质结电子学实际应用的剩余挑战和未来前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
The rise of semi-metal electronics
Semi-metals present unique transport properties due to their distinctive band structures and topological properties, leading to an emergence of semi-metal-based electronic applications. Specifically, these properties include intrinsic low density of states at the Fermi level, the linear dispersion electronic structure and the symmetry breaking in the momentum space, which can be harnessed for improved functionality, energy efficiency and form factor in electronic devices. In this Review, we examine the fundamental properties and devices based on semi-metals and their heterojunctions for electronics applications. We then discuss advanced logic, analogue, memory and interconnect technologies enabled by the physical properties of semi-metals and benchmark them against the state-of-the-art technologies. Finally, we outline the remaining challenges and future perspectives of practical applications of semi-metal heterojunction electronics. This Review examines the unique electronic properties of semi-metals and their microelectronics applications, highlighting recent advancements, challenges and future prospects for semi-metal-based technologies in logic, memory, interconnects and high-frequency devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The future of 2D spintronics Spintronics for ultra-low-power circuits and systems Spin-transfer torque magnetoresistive random access memory technology status and future directions Perpendicularly magnetized materials for energy-efficient orbitronics Spintronic neural systems
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1