毫米波压电器件的声学和电磁学协同建模

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Microelectromechanical Systems Pub Date : 2024-08-01 DOI:10.1109/JMEMS.2024.3431576
Tianyi Zhang;Yen-Wei Chang;Omar Barrera;Naveed Ahmed;Jack Kramer;Ruochen Lu
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引用次数: 0

摘要

这项工作报告了毫米波(mmWave)压电声学谐振器和滤波器的建模程序。与低频压电器件的传统方法不同,我们将声学和电磁(EM)效应(如自感应)同时纳入电路级拟合和有限元分析中,从而在更高频率下获得更高精度。为了验证该方法,我们将薄膜铌酸锂(LiNbO3)一阶非对称(A1)模式器件作为测试平台,结果与独立谐振器和五阶梯形滤波器的结果非常吻合。所报告的声学和电磁学协同建模技术在进一步发展后,可指导毫米波及更高波段的紧凑型压电器件的未来设计[2024-0074]。
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Acoustic and Electromagnetic Co-Modeling of Piezoelectric Devices at Millimeter Wave
This work reports the procedure for modeling piezoelectric acoustic resonators and filters at millimeter wave (mmWave). Different from conventional methods for lower frequency piezoelectric devices, we include both acoustic and electromagnetic (EM) effects, e.g., self-inductance, in both the circuit-level fitting and finite element analysis, toward higher accuracy at higher frequencies. To validate the method, thin-film lithium niobate (LiNbO3) first-order antisymmetric (A1) mode devices are used as the testbed, achieving great agreement for both the standalone resonators and a fifth-order ladder filter. Upon further development, the reported acoustic and EM co-modeling could guide the future design of compact piezoelectric devices at mmWave and beyond.[2024-0074]
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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