{"title":"偏置电压对 Ar/CH2F2/O2 等离子刻蚀 Si3N4 薄膜的影响","authors":"Shuichi Kuboi, Junji Kataoka, Daiki Iino, Kazuaki Kurihara, Hirotaka Toyoda, Hiroyuki Fukumizu","doi":"10.35848/1347-4065/ad6d20","DOIUrl":null,"url":null,"abstract":"\n The etching mechanism of silicon nitride (Si3N4) film depending on peak-to-peak bias voltage (V\n pp) in Ar/CH2F2/O2 gas-mixture plasmas for high-aspect-ratio etching process was investigated. It was observed that the Si3N4-film etch rate initially decreased with increase in the V\n pp up to 3630 V, but then increased beyond this threshold. This unusual etching behavior can be attributed to the formation of a modified layer on the surface of the Si3N4 film. The characteristics of the modified layer, such as thickness and atomic composition, were found to be strongly influenced by the ion energy and gas chemistry of the process conditions.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"51 15","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films\",\"authors\":\"Shuichi Kuboi, Junji Kataoka, Daiki Iino, Kazuaki Kurihara, Hirotaka Toyoda, Hiroyuki Fukumizu\",\"doi\":\"10.35848/1347-4065/ad6d20\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The etching mechanism of silicon nitride (Si3N4) film depending on peak-to-peak bias voltage (V\\n pp) in Ar/CH2F2/O2 gas-mixture plasmas for high-aspect-ratio etching process was investigated. It was observed that the Si3N4-film etch rate initially decreased with increase in the V\\n pp up to 3630 V, but then increased beyond this threshold. This unusual etching behavior can be attributed to the formation of a modified layer on the surface of the Si3N4 film. The characteristics of the modified layer, such as thickness and atomic composition, were found to be strongly influenced by the ion energy and gas chemistry of the process conditions.\",\"PeriodicalId\":505044,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"51 15\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad6d20\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad6d20","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films
The etching mechanism of silicon nitride (Si3N4) film depending on peak-to-peak bias voltage (V
pp) in Ar/CH2F2/O2 gas-mixture plasmas for high-aspect-ratio etching process was investigated. It was observed that the Si3N4-film etch rate initially decreased with increase in the V
pp up to 3630 V, but then increased beyond this threshold. This unusual etching behavior can be attributed to the formation of a modified layer on the surface of the Si3N4 film. The characteristics of the modified layer, such as thickness and atomic composition, were found to be strongly influenced by the ion energy and gas chemistry of the process conditions.
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