单层二维材料非共振强场电离的二维凯尔迪什理论

Tsing-Hua Her, Che-Hao Chang, Kenan Darden, Tsun-Hsu Chang, Hsin-Yu Yao
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引用次数: 0

摘要

固体光离子化的凯尔迪什理论被推广到原子级薄的二维半导体。我们推导出了具有凯恩色散的双带模型的闭式公式及其渐近形式。这些公式表现出与体态对应公式截然不同的特征,这归因于二维态密度的缩放。我们将这些公式与最近在单层 MoS2 中进行的强场电离实验进行了比较,结果一致,从而验证了我们的公式。我们的工作有望在强光-二维材料相互作用中得到广泛应用。
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Two-dimensional Keldysh theory for non-resonant strong-field ionization of monolayer 2D materials
The Keldysh theory of photoionization for solids is generalized to atomically thin two-dimensional semiconductors. We derive a closed-form formula and its asymptotic forms for a two-band model with a Kane dispersion. These formulas exhibit characteristically different behaviors from their bulk counterparts which are attributed to the scaling of the 2D density of states. We validate our formulas by comparing them to recent strong-field ionization experiments in monolayer MoS2 with good agreement. Our work is expected to find a wide range of applications in intense light - 2D material interaction.
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