通过改进 HFC-PFC 副产品的表征,在工艺开发过程中注重可持续性

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-08-06 DOI:10.1109/TSM.2024.3439271
Nathan Marchack;Eric A. Joseph
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引用次数: 0

摘要

最近有关全氟和多氟化合物(PFAS)的潜在法规对半导体制造领域产生了巨大影响。这是因为硅及其电介质是所有先进设备技术的材料基础,这决定了碳氟化合物气体的使用,尤其是在减法图案化和腔室清洗过程中。与此同时,人工智能领域的最新进展也刺激了对制造工厂的大量投资,以生产推动该领域发展的关键硬件。由于这些趋势明显相互对立,各研究领域之间的协同合作变得越来越重要,将可持续性作为技术发展的关键参数。此类研究工作的第一个关键步骤是改进对此类制造工艺中产生的含氟副产品的表征。低温等离子体放电的使用大大增加了现有反应途径的复杂性,使这项任务变得更具挑战性。在本文中,我们介绍了一种新颖的技术分析方法,该方法适用于使用博世工艺图案化的通孔硅侧壁上残留的碳氟化合物聚合。据我们所知,这是首次在文献中报道检测到比起始气体前体分子链长更长的氟化碳片段。在未来评估新型化学物质和减排处理方法的研究工作中,这一基线将非常有价值。
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Centering Sustainability in Process Development Through Improved Characterization of HFC-PFC Byproducts
Recent legislation concerning the potential regulation of per- and polyfluorinated chemistries as a class (PFAS) has enormous implications for the field of semiconductor manufacturing. This is so because the material foundation of silicon and its dielectrics which prevails across all advanced device technologies dictates the usage of fluorocarbon gases, particularly for subtractive patterning and chamber cleaning processes. Simultaneously, recent progresses in artificial intelligence have spurred large investments in fabrication plants to produce the critical hardware driving that field. As these trends stand in clear opposition to each other, it is increasingly important for synergy between research fields to center sustainability as a key parameter of technological development. The first critical step for such research efforts involves improved characterization of the fluorinated byproducts created in such manufacturing processes. The use of low-temperature plasma discharges tremendously increases the complexity of the available reaction pathways, making this task significantly more challenging. In this paper we present a novel technical analysis method applied to the fluorocarbon polymerization remaining on through-silicon via sidewalls patterned using the Bosch Process. Fluorinated carbon fragments with longer chain lengths than the starting gas precursor molecule were detected, which represents to the best of our knowledge the first time this has been reported in literature. This baseline will be invaluable in future research efforts to assess novel chemistries and abatement treatments.
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
期刊最新文献
Editorial Table of Contents Editorial IEEE Transactions on Semiconductor Manufacturing Information for Authors Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide Band Gap Semiconductors for Automotive Applications"
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