{"title":"III 氮化物宽脊激光二极管中纵向和横向模式之间的模式竞争","authors":"Lukas Uhlig;Dominic J. Kunzmann;Ulrich T. Schwarz","doi":"10.1109/JSTQE.2024.3440179","DOIUrl":null,"url":null,"abstract":"Mode competition in semiconductor laser diodes typically causes a continuously repeating spectral modulation by periodic mode hopping through longitudinal modes. High-power laser diodes include a broad ridge waveguide that supports multiple lateral mode operation, interacting with the dynamically changing spatial distribution of charge carriers. We investigate the time-dependent behavior of longitudinal-lateral mode competition in III-nitride-based broad-ridge laser diodes, involving several longitudinal mode combs, each corresponding to a different lateral mode. For this, we perform lateral scans of streak camera measurements, take single shot images, and develop a rate equation model for numerical simulation of the process. We observe mode competition that involves all active lateral modes, driven by asymmetric mode coupling. In particular, the small wavelength spacing between adjacent lateral modes and spatial lateral hole burning are influencing mode competition dynamics in broad-ridge devices. Furthermore, we investigate the role of mode clustering on the dynamical behavior and how long-time periodicity depends on the laser diode properties.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-12"},"PeriodicalIF":4.3000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10631275","citationCount":"0","resultStr":"{\"title\":\"Mode Competition Between Longitudinal and Lateral Modes in III-Nitride Broad-Ridge Laser Diodes\",\"authors\":\"Lukas Uhlig;Dominic J. Kunzmann;Ulrich T. Schwarz\",\"doi\":\"10.1109/JSTQE.2024.3440179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mode competition in semiconductor laser diodes typically causes a continuously repeating spectral modulation by periodic mode hopping through longitudinal modes. High-power laser diodes include a broad ridge waveguide that supports multiple lateral mode operation, interacting with the dynamically changing spatial distribution of charge carriers. We investigate the time-dependent behavior of longitudinal-lateral mode competition in III-nitride-based broad-ridge laser diodes, involving several longitudinal mode combs, each corresponding to a different lateral mode. For this, we perform lateral scans of streak camera measurements, take single shot images, and develop a rate equation model for numerical simulation of the process. We observe mode competition that involves all active lateral modes, driven by asymmetric mode coupling. In particular, the small wavelength spacing between adjacent lateral modes and spatial lateral hole burning are influencing mode competition dynamics in broad-ridge devices. Furthermore, we investigate the role of mode clustering on the dynamical behavior and how long-time periodicity depends on the laser diode properties.\",\"PeriodicalId\":13094,\"journal\":{\"name\":\"IEEE Journal of Selected Topics in Quantum Electronics\",\"volume\":\"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers\",\"pages\":\"1-12\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10631275\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Selected Topics in Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10631275/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10631275/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
半导体激光二极管中的模式竞争通常是通过纵向模式的周期性跳模造成连续重复的光谱调制。高功率激光二极管包括一个宽脊波导,它支持多种横向模式操作,并与动态变化的电荷载流子空间分布相互作用。我们研究了基于 III 氮化物的宽脊激光二极管中纵向-横向模式竞争随时间变化的行为,其中涉及多个纵向模式梳,每个梳对应一个不同的横向模式。为此,我们对条纹照相机的测量结果进行横向扫描,拍摄单发图像,并建立了一个速率方程模型,用于对这一过程进行数值模拟。在非对称模式耦合的驱动下,我们观察到涉及所有活动横向模式的模式竞争。特别是,相邻横向模式之间的小波长间隔和空间横向孔燃烧影响了宽脊器件中的模式竞争动力学。此外,我们还研究了模式聚类对动力学行为的作用,以及长时间周期性如何取决于激光二极管的特性。
Mode Competition Between Longitudinal and Lateral Modes in III-Nitride Broad-Ridge Laser Diodes
Mode competition in semiconductor laser diodes typically causes a continuously repeating spectral modulation by periodic mode hopping through longitudinal modes. High-power laser diodes include a broad ridge waveguide that supports multiple lateral mode operation, interacting with the dynamically changing spatial distribution of charge carriers. We investigate the time-dependent behavior of longitudinal-lateral mode competition in III-nitride-based broad-ridge laser diodes, involving several longitudinal mode combs, each corresponding to a different lateral mode. For this, we perform lateral scans of streak camera measurements, take single shot images, and develop a rate equation model for numerical simulation of the process. We observe mode competition that involves all active lateral modes, driven by asymmetric mode coupling. In particular, the small wavelength spacing between adjacent lateral modes and spatial lateral hole burning are influencing mode competition dynamics in broad-ridge devices. Furthermore, we investigate the role of mode clustering on the dynamical behavior and how long-time periodicity depends on the laser diode properties.
期刊介绍:
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.