{"title":"基于 MBE 的多堆叠 GeSiSn 量子点的结构、光学和电学特性","authors":"Vyacheslav Timofeev;Ilya Skvortsov;Vladimir Mashanov;Alexandr Nikiforov;Ivan Loshkarev;Alexey Bloshkin;Victor Kirienko;Dmitry Kolyada;Dmitrii Firsov;Oleg Komkov","doi":"10.1109/JSTQE.2024.3439526","DOIUrl":null,"url":null,"abstract":"Multistacked GeSiSn/Si quantum dot (MQD) structures of different compositions were obtained by molecular-beam epitaxy. The elastically strained state of GeSiSn/Si MQD structures was confirmed by the presence of diffraction maxima on X-ray rocking curves. The optical properties of GeSiSn/Si MQD structures were studied by Fourier transform infrared (FTIR) photoluminescence spectroscopy. The structures exhibited photoluminescence peaks in the 0.6–0.8 eV range originating from the QD region. The calculations showed that the observed peaks correspond to the radiative transition between the Δ\n<sub>4</sub>\n conduction band in Si and the energy level of heavy holes in the QDs. The peak positions in the PL spectra are in good correlation with the calculation results. It was demonstrated that the transition energy depends strongly on the composition and size of GeSiSn/Si QDs. The p-i-n photodiodes were developed based on the GeSiSn/Si MQD structures. The cutoff wavelength maximum reached the value of 2.65 μm for Ge\n<sub>0.80</sub>\nSi\n<sub>0.11</sub>\nSn\n<sub>0.09</sub>\n/Si MQD p-i-n photodiodes.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots\",\"authors\":\"Vyacheslav Timofeev;Ilya Skvortsov;Vladimir Mashanov;Alexandr Nikiforov;Ivan Loshkarev;Alexey Bloshkin;Victor Kirienko;Dmitry Kolyada;Dmitrii Firsov;Oleg Komkov\",\"doi\":\"10.1109/JSTQE.2024.3439526\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multistacked GeSiSn/Si quantum dot (MQD) structures of different compositions were obtained by molecular-beam epitaxy. The elastically strained state of GeSiSn/Si MQD structures was confirmed by the presence of diffraction maxima on X-ray rocking curves. The optical properties of GeSiSn/Si MQD structures were studied by Fourier transform infrared (FTIR) photoluminescence spectroscopy. The structures exhibited photoluminescence peaks in the 0.6–0.8 eV range originating from the QD region. The calculations showed that the observed peaks correspond to the radiative transition between the Δ\\n<sub>4</sub>\\n conduction band in Si and the energy level of heavy holes in the QDs. The peak positions in the PL spectra are in good correlation with the calculation results. It was demonstrated that the transition energy depends strongly on the composition and size of GeSiSn/Si QDs. The p-i-n photodiodes were developed based on the GeSiSn/Si MQD structures. The cutoff wavelength maximum reached the value of 2.65 μm for Ge\\n<sub>0.80</sub>\\nSi\\n<sub>0.11</sub>\\nSn\\n<sub>0.09</sub>\\n/Si MQD p-i-n photodiodes.\",\"PeriodicalId\":13094,\"journal\":{\"name\":\"IEEE Journal of Selected Topics in Quantum Electronics\",\"volume\":\"31 1: SiGeSn Infrared Photon. and Quantum Electronics\",\"pages\":\"1-8\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Selected Topics in Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10623775/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10623775/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots
Multistacked GeSiSn/Si quantum dot (MQD) structures of different compositions were obtained by molecular-beam epitaxy. The elastically strained state of GeSiSn/Si MQD structures was confirmed by the presence of diffraction maxima on X-ray rocking curves. The optical properties of GeSiSn/Si MQD structures were studied by Fourier transform infrared (FTIR) photoluminescence spectroscopy. The structures exhibited photoluminescence peaks in the 0.6–0.8 eV range originating from the QD region. The calculations showed that the observed peaks correspond to the radiative transition between the Δ
4
conduction band in Si and the energy level of heavy holes in the QDs. The peak positions in the PL spectra are in good correlation with the calculation results. It was demonstrated that the transition energy depends strongly on the composition and size of GeSiSn/Si QDs. The p-i-n photodiodes were developed based on the GeSiSn/Si MQD structures. The cutoff wavelength maximum reached the value of 2.65 μm for Ge
0.80
Si
0.11
Sn
0.09
/Si MQD p-i-n photodiodes.
期刊介绍：
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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