Kevin Lauer , Stephanie Reiß , Aaron Flötotto , Katharina Peh , Dominik Bratek , Robin Müller , Dirk Schulze , Wichard Beenken , Erik Hiller , Thomas Ortlepp , Stefan Krischok
{"title":"用 ASi-Sii- 缺陷模式解释非弹性离子碰撞对低增益雪崩探测器的影响","authors":"Kevin Lauer , Stephanie Reiß , Aaron Flötotto , Katharina Peh , Dominik Bratek , Robin Müller , Dirk Schulze , Wichard Beenken , Erik Hiller , Thomas Ortlepp , Stefan Krischok","doi":"10.1016/j.nimb.2024.165472","DOIUrl":null,"url":null,"abstract":"<div><p>The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the <em>A</em><sub>Si</sub>-Si<em><sub>i</sub></em>-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B<sub>Si</sub>-Si<em><sub>i</sub></em>-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the B<sub>Si</sub>-Si<em><sub>i</sub></em>-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments.</p></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"555 ","pages":"Article 165472"},"PeriodicalIF":1.4000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0168583X24002428/pdfft?md5=70d9c0b07c479f72633b840aabb6e65f&pid=1-s2.0-S0168583X24002428-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Sii-defect mode\",\"authors\":\"Kevin Lauer , Stephanie Reiß , Aaron Flötotto , Katharina Peh , Dominik Bratek , Robin Müller , Dirk Schulze , Wichard Beenken , Erik Hiller , Thomas Ortlepp , Stefan Krischok\",\"doi\":\"10.1016/j.nimb.2024.165472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the <em>A</em><sub>Si</sub>-Si<em><sub>i</sub></em>-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B<sub>Si</sub>-Si<em><sub>i</sub></em>-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the B<sub>Si</sub>-Si<em><sub>i</sub></em>-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments.</p></div>\",\"PeriodicalId\":19380,\"journal\":{\"name\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"volume\":\"555 \",\"pages\":\"Article 165472\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S0168583X24002428/pdfft?md5=70d9c0b07c479f72633b840aabb6e65f&pid=1-s2.0-S0168583X24002428-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0168583X24002428\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"INSTRUMENTS & INSTRUMENTATION\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X24002428","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
Effect of inelastic ion collisions on low-gain avalanche detectors explained by an ASi-Sii-defect mode
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the ASi-Sii-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the BSi-Sii-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the BSi-Sii-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments.
期刊介绍：
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
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