{"title":"功率超过 29.5 瓦、具有高谐波抑制能力的 7-13-GHz 宽带氮化镓功率放大器","authors":"Jialin Luo;Jing Wan;Baixi Du;Ruiying Gao;Xuming Sun;Xiaojie Zhang;Xiaoxin Liang","doi":"10.1109/LMWT.2024.3406708","DOIUrl":null,"url":null,"abstract":"This letter presents a high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nm gallium nitride (GaN) high-electron-mobility transistor (HEMT) process. An elliptic filter output matching network (MN) and a matching circuit design method based on the combination of port impedance model (PIM) and load pull are proposed, which can achieve high harmonics suppression across 7–13 GHz using a reactive matching (RM) technique. The three-stage GaN PA achieves a minimum output power of 44.7 dBm and a peak output power of 46.3 dBm at 7.5 GHz. The power-added efficiency (PAE) is more than 34.4%, with a peak PAE of 39.0% at 9.5 GHz. The second harmonic suppression (HS2) reaches more than 22.5 dBc. The PA chip occupies an area of \n<inline-formula> <tex-math>$4.8\\times 3.0$ </tex-math></inline-formula>\n mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Over 29.5-W, 7–13-GHz Wideband GaN Power Amplifier With High Harmonic Suppression\",\"authors\":\"Jialin Luo;Jing Wan;Baixi Du;Ruiying Gao;Xuming Sun;Xiaojie Zhang;Xiaoxin Liang\",\"doi\":\"10.1109/LMWT.2024.3406708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-\\n<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>\\nm gallium nitride (GaN) high-electron-mobility transistor (HEMT) process. An elliptic filter output matching network (MN) and a matching circuit design method based on the combination of port impedance model (PIM) and load pull are proposed, which can achieve high harmonics suppression across 7–13 GHz using a reactive matching (RM) technique. The three-stage GaN PA achieves a minimum output power of 44.7 dBm and a peak output power of 46.3 dBm at 7.5 GHz. The power-added efficiency (PAE) is more than 34.4%, with a peak PAE of 39.0% at 9.5 GHz. The second harmonic suppression (HS2) reaches more than 22.5 dBc. The PA chip occupies an area of \\n<inline-formula> <tex-math>$4.8\\\\times 3.0$ </tex-math></inline-formula>\\n mm2.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10551278/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10551278/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
An Over 29.5-W, 7–13-GHz Wideband GaN Power Amplifier With High Harmonic Suppression
This letter presents a high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on the 0.25-
$\mu $
m gallium nitride (GaN) high-electron-mobility transistor (HEMT) process. An elliptic filter output matching network (MN) and a matching circuit design method based on the combination of port impedance model (PIM) and load pull are proposed, which can achieve high harmonics suppression across 7–13 GHz using a reactive matching (RM) technique. The three-stage GaN PA achieves a minimum output power of 44.7 dBm and a peak output power of 46.3 dBm at 7.5 GHz. The power-added efficiency (PAE) is more than 34.4%, with a peak PAE of 39.0% at 9.5 GHz. The second harmonic suppression (HS2) reaches more than 22.5 dBc. The PA chip occupies an area of
$4.8\times 3.0$
mm2.