使用基底集成同轴线技术的低成本反射振荡器

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-06-19 DOI:10.1109/LMWT.2024.3412922
Saurabh Shukla;Soumava Mukherjee
{"title":"使用基底集成同轴线技术的低成本反射振荡器","authors":"Saurabh Shukla;Soumava Mukherjee","doi":"10.1109/LMWT.2024.3412922","DOIUrl":null,"url":null,"abstract":"This letter presents substrate integrated coaxial line technology (SICL)-based low phase noise (PN) reflection oscillator at 15 GHz. The proposed oscillator circuit is realized using SICL-based high-Q-factor resonator. The SICL resonator operates at 15 GHz, where the terminating impedance of the resonator is controlled by the appropriate selection of inset dimensions. Moreover, the proposed circuit satisfies the Kurokawa’s condition between the SICL resonator and the source terminal of active device with adjusting the length of short-circuited stub at the gate terminal in the SICL environment. Due to the high-Q factor of the SICL-based resonator, the prototype of the proposed oscillator achieved a low PN of −110 dBc/Hz at 100 kHz and −133 dBc/Hz at 1 MHz with an RF output power of 12 dBm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1035-1038"},"PeriodicalIF":0.0000,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low-Cost Reflection Oscillator Using Substrate Integrated Coaxial Line Technology\",\"authors\":\"Saurabh Shukla;Soumava Mukherjee\",\"doi\":\"10.1109/LMWT.2024.3412922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents substrate integrated coaxial line technology (SICL)-based low phase noise (PN) reflection oscillator at 15 GHz. The proposed oscillator circuit is realized using SICL-based high-Q-factor resonator. The SICL resonator operates at 15 GHz, where the terminating impedance of the resonator is controlled by the appropriate selection of inset dimensions. Moreover, the proposed circuit satisfies the Kurokawa’s condition between the SICL resonator and the source terminal of active device with adjusting the length of short-circuited stub at the gate terminal in the SICL environment. Due to the high-Q factor of the SICL-based resonator, the prototype of the proposed oscillator achieved a low PN of −110 dBc/Hz at 100 kHz and −133 dBc/Hz at 1 MHz with an RF output power of 12 dBm.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"34 8\",\"pages\":\"1035-1038\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10563190/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10563190/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了基于衬底集成同轴线技术(SICL)的 15 GHz 低相位噪声(PN)反射振荡器。所提出的振荡器电路是利用基于 SICL 的高 Q 因子谐振器实现的。SICL 谐振器的工作频率为 15 GHz,谐振器的终端阻抗可通过适当选择嵌入尺寸来控制。此外,在 SICL 环境中,通过调整栅极短路桩的长度,所提出的电路可以满足 SICL 谐振器与有源器件源极之间的黑川条件。由于基于 SICL 谐振器的高 Q 因子,拟议振荡器的原型在射频输出功率为 12 dBm 时实现了 100 kHz 时 -110 dBc/Hz 和 1 MHz 时 -133 dBc/Hz 的低 PN。
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A Low-Cost Reflection Oscillator Using Substrate Integrated Coaxial Line Technology
This letter presents substrate integrated coaxial line technology (SICL)-based low phase noise (PN) reflection oscillator at 15 GHz. The proposed oscillator circuit is realized using SICL-based high-Q-factor resonator. The SICL resonator operates at 15 GHz, where the terminating impedance of the resonator is controlled by the appropriate selection of inset dimensions. Moreover, the proposed circuit satisfies the Kurokawa’s condition between the SICL resonator and the source terminal of active device with adjusting the length of short-circuited stub at the gate terminal in the SICL environment. Due to the high-Q factor of the SICL-based resonator, the prototype of the proposed oscillator achieved a low PN of −110 dBc/Hz at 100 kHz and −133 dBc/Hz at 1 MHz with an RF output power of 12 dBm.
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