Hamin Lee;Juwon Ham;Junmin Lee;Wooseok Jang;Seunghoon Ko
{"title":"用于副显示面板应用的 620-pF 补偿双模电容读出集成电路","authors":"Hamin Lee;Juwon Ham;Junmin Lee;Wooseok Jang;Seunghoon Ko","doi":"10.1109/LSSC.2024.3418523","DOIUrl":null,"url":null,"abstract":"This letter presents a touch readout integrated circuit (IC) integrating both mutual- and self-capacitance sensing capabilities. The proposed IC aims to compensate for self-capacitance up to 620 pF by employing a combination of current-mode and capacitive-mode compensation techniques. A noise-monitoring scheme, based on the orthogonality of multicapacitance driving sequences, enhances readout performance by selectively detecting external noises during mutual-capacitance sensing operation. The IC achieved the measured signal-to-noise ratio (SNR) of 47.3, 30.6, and 36.1 dB in mutual-capacitance sensing and self-capacitance sensing of T/RX electrodes, respectively. By applying the noise-monitoring scheme, a 7-times higher noise power compared to the absence of external noise were successfully detected.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"195-198"},"PeriodicalIF":2.2000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 620-pF-Compensated Dual-Mode Capacitance Readout IC for Subdisplay Panel Applications\",\"authors\":\"Hamin Lee;Juwon Ham;Junmin Lee;Wooseok Jang;Seunghoon Ko\",\"doi\":\"10.1109/LSSC.2024.3418523\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a touch readout integrated circuit (IC) integrating both mutual- and self-capacitance sensing capabilities. The proposed IC aims to compensate for self-capacitance up to 620 pF by employing a combination of current-mode and capacitive-mode compensation techniques. A noise-monitoring scheme, based on the orthogonality of multicapacitance driving sequences, enhances readout performance by selectively detecting external noises during mutual-capacitance sensing operation. The IC achieved the measured signal-to-noise ratio (SNR) of 47.3, 30.6, and 36.1 dB in mutual-capacitance sensing and self-capacitance sensing of T/RX electrodes, respectively. By applying the noise-monitoring scheme, a 7-times higher noise power compared to the absence of external noise were successfully detected.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"7 \",\"pages\":\"195-198\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10570290/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10570290/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A 620-pF-Compensated Dual-Mode Capacitance Readout IC for Subdisplay Panel Applications
This letter presents a touch readout integrated circuit (IC) integrating both mutual- and self-capacitance sensing capabilities. The proposed IC aims to compensate for self-capacitance up to 620 pF by employing a combination of current-mode and capacitive-mode compensation techniques. A noise-monitoring scheme, based on the orthogonality of multicapacitance driving sequences, enhances readout performance by selectively detecting external noises during mutual-capacitance sensing operation. The IC achieved the measured signal-to-noise ratio (SNR) of 47.3, 30.6, and 36.1 dB in mutual-capacitance sensing and self-capacitance sensing of T/RX electrodes, respectively. By applying the noise-monitoring scheme, a 7-times higher noise power compared to the absence of external noise were successfully detected.