反应离子蚀刻在微电子领域的 50 年发展历程

Sergey Voronin;Christophe Vallée
{"title":"反应离子蚀刻在微电子领域的 50 年发展历程","authors":"Sergey Voronin;Christophe Vallée","doi":"10.1109/TMAT.2024.3420822","DOIUrl":null,"url":null,"abstract":"In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision of the etching can be improved by using innovative solutions such as pulsing plasmas and cyclic processes. These changes are then discussed in a second section from a design point of view for industrial equipment and components. In particular, the tool design evolution is discussed by addressing its generic hardware components, most common plasma sources, power coupling efficiency and matching networks.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"49-63"},"PeriodicalIF":0.0000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"50 Years of Reactive Ion Etching in Microelectronics\",\"authors\":\"Sergey Voronin;Christophe Vallée\",\"doi\":\"10.1109/TMAT.2024.3420822\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision of the etching can be improved by using innovative solutions such as pulsing plasmas and cyclic processes. These changes are then discussed in a second section from a design point of view for industrial equipment and components. In particular, the tool design evolution is discussed by addressing its generic hardware components, most common plasma sources, power coupling efficiency and matching networks.\",\"PeriodicalId\":100642,\"journal\":{\"name\":\"IEEE Transactions on Materials for Electron Devices\",\"volume\":\"1 \",\"pages\":\"49-63\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Materials for Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10579058/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Materials for Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10579058/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在这篇简短的综述中,我们探讨了自 50 年前发现反应离子蚀刻工艺以来,微电子制造中使用的等离子蚀刻技术的演变。首先从工艺工程的角度讨论了这些演变。在举例说明当前和未来面临的挑战后,介绍了如何通过使用脉冲等离子体和循环工艺等创新解决方案来提高蚀刻精度。第二部分从工业设备和部件的设计角度讨论了这些变化。特别是,通过讨论通用硬件组件、最常见的等离子源、功率耦合效率和匹配网络,讨论了工具设计的演变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
50 Years of Reactive Ion Etching in Microelectronics
In this short review, the evolution of plasma etching technologies used in microelectronics fabrication since the discovery of the reactive ion etching process 50 years ago is explored. These evolutions are first discussed from a process engineering point of view. After giving some examples of present and future challenges, it is described how the precision of the etching can be improved by using innovative solutions such as pulsing plasmas and cyclic processes. These changes are then discussed in a second section from a design point of view for industrial equipment and components. In particular, the tool design evolution is discussed by addressing its generic hardware components, most common plasma sources, power coupling efficiency and matching networks.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Editorial An Era of Surfaces Call for Nominations for Editor-in-Chief—IEEE Transactions on Semiconductor Manufacturing Advances in Flexible Electrotactile Devices for Restoration of Biomedical Haptic Sensation Off-Axis Electron Holography as a Tool for the Mapping of Electromagnetic Properties in the Semiconductor Industry Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1