Pub Date : 2024-11-25DOI: 10.1109/TMAT.2024.3486974
FRANCESCA IACOPI
{"title":"Editorial An Era of Surfaces","authors":"FRANCESCA IACOPI","doi":"10.1109/TMAT.2024.3486974","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3486974","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"iii-iv"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-05DOI: 10.1109/TMAT.2024.3489232
{"title":"Call for Nominations for Editor-in-Chief—IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TMAT.2024.3489232","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3489232","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10742964","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142587635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haptic technology often uses electrical or mechanical methods to stimulate skin mechanoreceptors, creating touch sensations that will enhance experiences in assistive technologies and virtual or augmented reality. One approach involves creating platforms that deliver spatiotemporal sensation to the skin by using thin, skin-like technologies, thus minimizing user discomfort. This review highlights the biological basis for nervous system involved in sensing and the fundamentals of electrotactile devices which facilitate tactile perception in forms suitable for integration with the skin. It discusses principles of human sensation and electrical stimulation, along with materials requirement, aiming to provide a comprehensive understanding of the possibilities of electrotactile techniques and its performance in enabling specific biomedical haptic applications where other haptic technologies are less effective. The potential of current efforts, along with challenges and associated opportunities are also presented.
{"title":"Advances in Flexible Electrotactile Devices for Restoration of Biomedical Haptic Sensation","authors":"Yunxia Jin;Zixiong Wu;Yusheng Zhang;Jiaming Qi;Chwee Teck Lim","doi":"10.1109/TMAT.2024.3483174","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3483174","url":null,"abstract":"Haptic technology often uses electrical or mechanical methods to stimulate skin mechanoreceptors, creating touch sensations that will enhance experiences in assistive technologies and virtual or augmented reality. One approach involves creating platforms that deliver spatiotemporal sensation to the skin by using thin, skin-like technologies, thus minimizing user discomfort. This review highlights the biological basis for nervous system involved in sensing and the fundamentals of electrotactile devices which facilitate tactile perception in forms suitable for integration with the skin. It discusses principles of human sensation and electrical stimulation, along with materials requirement, aiming to provide a comprehensive understanding of the possibilities of electrotactile techniques and its performance in enabling specific biomedical haptic applications where other haptic technologies are less effective. The potential of current efforts, along with challenges and associated opportunities are also presented.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"126-135"},"PeriodicalIF":0.0,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/TMAT.2024.3482284
David Cooper;Victor Boureau;Trevor P. Almeida
In this paper we discuss the state-of-the-art of off-axis electron holography today. We introduce the method and illustrate how it can be used for the measurements of dopants and polarization potentials in a range of different semiconductor materials. We then demonstrate how it can be used to measure the magnetic fields around technologically relevant materials for spintronics. Within this work we also demonstrate the use of off-axis electron holography during in-situ electrical biasing experiments for the study of micro-LED devices and in-situ annealing for the case of MRAM devices. We discuss when holography can and cannot be successfully applied and demonstrate clearly that it is a useful tool that can be used for routine analysis in the semiconductor industry.
本文讨论了当今离轴电子全息技术的最新发展。我们介绍了该方法，并说明了它如何用于测量一系列不同半导体材料中的掺杂物和极化电位。然后，我们演示了如何使用该方法测量自旋电子技术相关材料周围的磁场。在这项工作中，我们还演示了在研究微型 LED 设备的原位电偏压实验和 MRAM 设备的原位退火实验中使用离轴电子全息技术。我们讨论了什么情况下可以成功应用全息技术，什么情况下不可以，并清楚地证明了全息技术是一种可用于半导体行业常规分析的有用工具。
{"title":"Off-Axis Electron Holography as a Tool for the Mapping of Electromagnetic Properties in the Semiconductor Industry","authors":"David Cooper;Victor Boureau;Trevor P. Almeida","doi":"10.1109/TMAT.2024.3482284","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3482284","url":null,"abstract":"In this paper we discuss the state-of-the-art of off-axis electron holography today. We introduce the method and illustrate how it can be used for the measurements of dopants and polarization potentials in a range of different semiconductor materials. We then demonstrate how it can be used to measure the magnetic fields around technologically relevant materials for spintronics. Within this work we also demonstrate the use of off-axis electron holography during in-situ electrical biasing experiments for the study of micro-LED devices and in-situ annealing for the case of MRAM devices. We discuss when holography can and cannot be successfully applied and demonstrate clearly that it is a useful tool that can be used for routine analysis in the semiconductor industry.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"136-150"},"PeriodicalIF":0.0,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-07DOI: 10.1109/TMAT.2024.3475331
Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque
The work function of carbon-based materials is crucial in understanding the electronic properties, offering critical insights for optimizing device performance and advancing electronic applications. The work function of diamond-like carbon (DLC), Q-carbon, and diamond is measured using ultraviolet photoelectron spectroscopy (UPS). Three DLC films having different sp 2 /sp 3 content (I D /I G ratios 0.43, 0.87, and 1.61) are grown using pulsed laser deposition, and the Q-carbon films are fabricated using subsequent pulsed laser annealing of the DLC films. Moreover, the diamond films are deposited using hot filament chemical vapor deposition (HFCVD). The compositional analysis of the films is performed using Raman spectroscopy, and the formation of Q-carbon is confirmed through Raman spectroscopy and scanning electron microscopic (SEM) analysis. The bandgap measurement using the Tauc plot demonstrates the bandgap of the DLC films to range from 2.56 eV to 3.77 eV, while the bandgap of Q-carbon is measured to be 3.7 eV. The work function measurement reveals the values to range from 3.91 eV to 4.18 eV for the DLC films. Additionally, the work function of Q-carbon is calculated to be 3.82 eV from experimental measurements, while the DFT simulations provide a value of 3.62 eV. Finally, the diamond film's work function is measured at 4.54 eV. Overall, the results reveal insights into the relationship between structural characteristics and work function, providing valuable information for optimizing the performance of these materials in electronic and optoelectronic technologies.
{"title":"Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy","authors":"Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque","doi":"10.1109/TMAT.2024.3475331","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3475331","url":null,"abstract":"The work function of carbon-based materials is crucial in understanding the electronic properties, offering critical insights for optimizing device performance and advancing electronic applications. The work function of diamond-like carbon (DLC), Q-carbon, and diamond is measured using ultraviolet photoelectron spectroscopy (UPS). Three DLC films having different sp\u0000<sup>2</sup>\u0000/sp\u0000<sup>3</sup>\u0000 content (I\u0000<sub>D</sub>\u0000/I\u0000<sub>G</sub>\u0000 ratios 0.43, 0.87, and 1.61) are grown using pulsed laser deposition, and the Q-carbon films are fabricated using subsequent pulsed laser annealing of the DLC films. Moreover, the diamond films are deposited using hot filament chemical vapor deposition (HFCVD). The compositional analysis of the films is performed using Raman spectroscopy, and the formation of Q-carbon is confirmed through Raman spectroscopy and scanning electron microscopic (SEM) analysis. The bandgap measurement using the Tauc plot demonstrates the bandgap of the DLC films to range from 2.56 eV to 3.77 eV, while the bandgap of Q-carbon is measured to be 3.7 eV. The work function measurement reveals the values to range from 3.91 eV to 4.18 eV for the DLC films. Additionally, the work function of Q-carbon is calculated to be 3.82 eV from experimental measurements, while the DFT simulations provide a value of 3.62 eV. Finally, the diamond film's work function is measured at 4.54 eV. Overall, the results reveal insights into the relationship between structural characteristics and work function, providing valuable information for optimizing the performance of these materials in electronic and optoelectronic technologies.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"121-125"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1109/TMAT.2024.3428948
Paolo A. Gargini
{"title":"Editorial A Quick History of Modern Electronics and the Role of Materials, Processes and Interfaces","authors":"Paolo A. Gargini","doi":"10.1109/TMAT.2024.3428948","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3428948","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"64-67"},"PeriodicalIF":0.0,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10659743","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142090942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-20DOI: 10.1109/TMAT.2024.3446740
Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt
Emerging interconnect technologies with increased performance of microchips necessitate the reliable integration of ultra-low-k dielectrics such as hybrid organosilicate glasses (OSG) as insulating units to prevent crosstalk. However, obtaining nanoscale trench patterns densely filled with low-k dielectrics has been challenging as the feature sizes become smaller. Several studies report on the formation of undesired low-density regions within the low-k dielectric decreasing device reliability and preventing easy scalability. With the help of molecular dynamics simulations, we developed computational modeling strategies where we explore the role of OSG precursor structure and the OSG precursor-trench interaction on the formation of low-density regions and final morphology of the low-k filling under confinement. Our goal is to ultimately provide guidance for the experimental efforts for precursor selection to control the formation of low-density regions to enhance mechanical reliability. Our simulation results show that cyclic and hyperconnected 1,3,5-benzene precursor molecules can pack in a relatively more homogeneous fashion under nanoscale confinement compared to more conventionally connected ethylene bridged Et-OCS molecules. The molecular geometry and crosslinking of hyperconnected 1,3,5-benzene precursors can help reduce the formation of low-density regions and lead to better connectivity of the filling material formed under nanoconfinement; thereby yielding improved elastic and fracture properties.
随着微芯片性能的不断提高，新兴的互连技术需要可靠地集成超低 K 电介质，如混合有机硅玻璃（OSG）作为绝缘单元，以防止串扰。然而，随着特征尺寸越来越小，要获得密布低 k 电介质的纳米级沟槽图案一直是个挑战。一些研究报告指出，在低 k 电介质中会形成不想要的低密度区域，从而降低了器件的可靠性，并阻碍了可扩展性。在分子动力学模拟的帮助下，我们开发了计算建模策略，探索 OSG 前驱体结构和 OSG 前驱体-沟槽相互作用对低密度区的形成以及约束下低介电填料最终形态的作用。我们的目标是最终为选择前驱体的实验工作提供指导，以控制低密度区域的形成，提高机械可靠性。我们的模拟结果表明，与传统连接的乙烯桥接 Et-OCS 分子相比，环状和超连接的 1,3,5 苯前驱体分子在纳米级约束下可以以相对更均匀的方式堆积。超连接 1,3,5-苯前体的分子几何形状和交联有助于减少低密度区域的形成，并使在纳米约束下形成的填充材料具有更好的连通性，从而改善弹性和断裂性能。
{"title":"Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials","authors":"Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt","doi":"10.1109/TMAT.2024.3446740","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3446740","url":null,"abstract":"Emerging interconnect technologies with increased performance of microchips necessitate the reliable integration of ultra-low-k dielectrics such as hybrid organosilicate glasses (OSG) as insulating units to prevent crosstalk. However, obtaining nanoscale trench patterns densely filled with low-k dielectrics has been challenging as the feature sizes become smaller. Several studies report on the formation of undesired low-density regions within the low-k dielectric decreasing device reliability and preventing easy scalability. With the help of molecular dynamics simulations, we developed computational modeling strategies where we explore the role of OSG precursor structure and the OSG precursor-trench interaction on the formation of low-density regions and final morphology of the low-k filling under confinement. Our goal is to ultimately provide guidance for the experimental efforts for precursor selection to control the formation of low-density regions to enhance mechanical reliability. Our simulation results show that cyclic and hyperconnected 1,3,5-benzene precursor molecules can pack in a relatively more homogeneous fashion under nanoscale confinement compared to more conventionally connected ethylene bridged Et-OCS molecules. The molecular geometry and crosslinking of hyperconnected 1,3,5-benzene precursors can help reduce the formation of low-density regions and lead to better connectivity of the filling material formed under nanoconfinement; thereby yielding improved elastic and fracture properties.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"82-89"},"PeriodicalIF":0.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-15DOI: 10.1109/TMAT.2024.3443753
Baiyu Zhang;Hansel A. Hobbie;Yizhang Wu;Wubin Bai;Aaron D. Franklin
MXenes have garnered significant attention for electronics applications due to their facile synthesis, tunable properties, and exceptional optical and electrical characteristics. Their stable aqueous suspension without additional surfactants enables compatibility of MXenes with various low-cost, additive manufacturing techniques, including spin coating, spraying, and direct-write printing. In this work, we investigate the aerosol jet printing of water-based Ti 3 C 2 T x MXene on surfaces with different wettability, achieving printed thin films with sheet resistance as low as ∼7 Ω/□ within three printing passes on both hydrophilic and hydrophobic substrates. Furthermore, we present MXene-contacted carbon nanotube thin-film transistors (CNT-TFTs) with various device geometries, finding a tradeoff between on- and off-state performance when selecting between bottom and top contacts, respectively. Devices with MXene contacts exhibited performance (on-state current up to 16.9 μA/mm and on/off-current ratio of 10 6 ) comparable to printed CNT-TFTs contacted by graphene and silver nanowires; meanwhile, the lower unit price of MXene ink makes it a more attractive candidate for low-cost, large-area fabrication.
{"title":"MXene-Contacted Carbon Nanotube Thin-Film Transistors Using Aerosol Jet Printing","authors":"Baiyu Zhang;Hansel A. Hobbie;Yizhang Wu;Wubin Bai;Aaron D. Franklin","doi":"10.1109/TMAT.2024.3443753","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3443753","url":null,"abstract":"MXenes have garnered significant attention for electronics applications due to their facile synthesis, tunable properties, and exceptional optical and electrical characteristics. Their stable aqueous suspension without additional surfactants enables compatibility of MXenes with various low-cost, additive manufacturing techniques, including spin coating, spraying, and direct-write printing. In this work, we investigate the aerosol jet printing of water-based Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000T\u0000<italic><sub>x</sub></i>\u0000 MXene on surfaces with different wettability, achieving printed thin films with sheet resistance as low as ∼7 Ω/□ within three printing passes on both hydrophilic and hydrophobic substrates. Furthermore, we present MXene-contacted carbon nanotube thin-film transistors (CNT-TFTs) with various device geometries, finding a tradeoff between on- and off-state performance when selecting between bottom and top contacts, respectively. Devices with MXene contacts exhibited performance (on-state current up to 16.9 μA/mm and on/off-current ratio of 10\u0000<sup>6</sup>\u0000) comparable to printed CNT-TFTs contacted by graphene and silver nanowires; meanwhile, the lower unit price of MXene ink makes it a more attractive candidate for low-cost, large-area fabrication.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"90-96"},"PeriodicalIF":0.0,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-08DOI: 10.1109/TMAT.2024.3440889
Manh Dat Nguyen;Zhiwei Yin;Rafael Del Rey;Francesca Iacopi;Yang Yang
There is growing interest in Additive Manufacturing (AM) as a state-of-the-art fabrication technology for electronics, complementary to silicon -based manufacturing. Notwithstanding current limitations in the choice of available materials and minimum feature sizes, the ability to manufacture complex customized structures, compact and rapid prototyping are the main benefits of 3D printed electronics. This paper summarizes the status of AM electronics material's characteristics and introduces the principles of AME process. In particular, the AME applications in various frequency bands are discussed. Overall, this paper demonstrates the significance of AM in facilitating the advancement of advanced electronic component manufacturing, particularly as to passive circuits, electronic devices, antennas, metasurfaces and electronic packaging.
增材制造（AM）作为一种先进的电子制造技术，是对硅基制造技术的补充，受到越来越多的关注。尽管目前在可用材料的选择和最小特征尺寸方面存在限制，但制造复杂定制结构、紧凑和快速原型的能力是三维打印电子技术的主要优势。本文总结了 AM 电子材料特性的现状，并介绍了 AME 工艺的原理。特别讨论了 AME 在不同频段的应用。总之，本文论证了 AM 在促进先进电子元件制造方面的重要意义，尤其是在无源电路、电子器件、天线、元表面和电子封装方面。
{"title":"Additive Manufacturing Materials and Processes for Passive Electronics in Wireless Communication","authors":"Manh Dat Nguyen;Zhiwei Yin;Rafael Del Rey;Francesca Iacopi;Yang Yang","doi":"10.1109/TMAT.2024.3440889","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3440889","url":null,"abstract":"There is growing interest in Additive Manufacturing (AM) as a state-of-the-art fabrication technology for electronics, complementary to silicon -based manufacturing. Notwithstanding current limitations in the choice of available materials and minimum feature sizes, the ability to manufacture complex customized structures, compact and rapid prototyping are the main benefits of 3D printed electronics. This paper summarizes the status of AM electronics material's characteristics and introduces the principles of AME process. In particular, the AME applications in various frequency bands are discussed. Overall, this paper demonstrates the significance of AM in facilitating the advancement of advanced electronic component manufacturing, particularly as to passive circuits, electronic devices, antennas, metasurfaces and electronic packaging.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"97-105"},"PeriodicalIF":0.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142313050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The discovery of ferroelectricity in hafnia has revolutionized the field and brought industry applications closer than ever. One of the most interesting aspects of hafnia compared to other ferroelectric materials is the possibility of scaling film thicknesses down to the 10 nm regime and even below. However, going significantly below 10 nm poses some challenges in terms of materials engineering. In this perspective paper, the topic of thickness scaling in ferroelectric hafnia will be discussed in terms of physical limits, current achievements and challenges, and potential applications in different device types.
{"title":"On the Thickness Scaling of Ferroelectric Hafnia","authors":"Suzanne Lancaster;Stefan Slesazeck;Thomas Mikolajick","doi":"10.1109/TMAT.2024.3423665","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3423665","url":null,"abstract":"The discovery of ferroelectricity in hafnia has revolutionized the field and brought industry applications closer than ever. One of the most interesting aspects of hafnia compared to other ferroelectric materials is the possibility of scaling film thicknesses down to the 10 nm regime and even below. However, going significantly below 10 nm poses some challenges in terms of materials engineering. In this perspective paper, the topic of thickness scaling in ferroelectric hafnia will be discussed in terms of physical limits, current achievements and challenges, and potential applications in different device types.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"36-48"},"PeriodicalIF":0.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：