This paper presents the synthesis and performance of a novel flexible patch antenna sensor based on graphene nanoplatelets (GNP) material designed to operate at the 5.8 GHz frequency, targeting wearable applications. The fabrication process employed in this chapter involved a simple yet effective spray coating method, utilizing a GNP dispersion applied with a spray gun to form a rectangular patch with a full ground plane on the PDMS substrate. This method offers the advantages of being cost-effective and scalable, making it suitable for large-scale production. The antenna's performance as a sensor was evaluated by subjecting it to different bending scenarios, mimicking both compressive (positive bending) and tensile (negative bending) strains. The resulting shifts in resonant frequency under these conditions offered important information about the sensor's sensitivity. The practical applicability of the antenna sensor was demonstrated through human limb motion detection experiments, specifically tracking wrist movements. The sensor's ability to detect upward and downward wrist motions through variations in the normalized frequency output highlights its potential for real-world wearable applications. In addition to its promising performance, the operation of this antenna within the Industrial/Scientific/Medical (ISM) band at 5.8 GHz opens up a range of potential applications.
{"title":"Spray Coated GNP-PDMS Flexible Patch Antenna-Sensor for Wireless Wearable Applications","authors":"Atul Kumar Sharma;Anup Kumar Sharma;Ritu Sharma;Puneet Sharma;Mamta Devi Sharma","doi":"10.1109/TMAT.2025.3539249","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3539249","url":null,"abstract":"This paper presents the synthesis and performance of a novel flexible patch antenna sensor based on graphene nanoplatelets (GNP) material designed to operate at the 5.8 GHz frequency, targeting wearable applications. The fabrication process employed in this chapter involved a simple yet effective spray coating method, utilizing a GNP dispersion applied with a spray gun to form a rectangular patch with a full ground plane on the PDMS substrate. This method offers the advantages of being cost-effective and scalable, making it suitable for large-scale production. The antenna's performance as a sensor was evaluated by subjecting it to different bending scenarios, mimicking both compressive (positive bending) and tensile (negative bending) strains. The resulting shifts in resonant frequency under these conditions offered important information about the sensor's sensitivity. The practical applicability of the antenna sensor was demonstrated through human limb motion detection experiments, specifically tracking wrist movements. The sensor's ability to detect upward and downward wrist motions through variations in the normalized frequency output highlights its potential for real-world wearable applications. In addition to its promising performance, the operation of this antenna within the Industrial/Scientific/Medical (ISM) band at 5.8 GHz opens up a range of potential applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143512794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-03DOI: 10.1109/TMAT.2025.3535909
{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TMAT.2025.3535909","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3535909","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10869512","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-17DOI: 10.1109/TMAT.2025.3529277
{"title":"Wide Band Gap Semiconductors for Automotive Applications Call for Papers","authors":"","doi":"10.1109/TMAT.2025.3529277","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529277","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844544","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-17DOI: 10.1109/TMAT.2025.3529352
{"title":"Call for Papers: Special Issue on Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications","authors":"","doi":"10.1109/TMAT.2025.3529352","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529352","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844545","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-17DOI: 10.1109/TMAT.2025.3529353
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on:","authors":"","doi":"10.1109/TMAT.2025.3529353","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529353","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844543","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-14DOI: 10.1109/TMAT.2025.3529194
{"title":"2024 Index IEEE Transactions on Materials for Electron Devices Vol. 1","authors":"","doi":"10.1109/TMAT.2025.3529194","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529194","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"222-229"},"PeriodicalIF":0.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10841915","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The choice and engineering of the gate-dielectric (GD) is of paramount importance to the performance and energy-efficiency of two-dimensional (2D) field-effect-transistors (FETs) that are considered to be primary candidates for sub-10 nm gate length (L g ) metal-oxide-semiconductor FETs (MOSFETs). Despite remarkable progress achieved in recent years by the semiconductor-industry towards realization of high-performance 2D FETs based on transition-metal dichalcogenides (TMDs), achieving fast switching speeds and low device leakage currents remain an open challenge. More specifically, the effect of traps at the dielectric-2D interface and bulk defects in the dielectric on device performance have not been thoroughly investigated. In this paper, taking a common 2D-TMD material molybdenum disulfide (MoS 2 ) as an example, we explore various GDs and dielectric-stacks – their interfaces, traps and defects, by using rigorous ab-initio density-functional-theory (DFT) and non-equilibrium-Green's-function (NEGF) transport. Our framework and analysis provide valuable insights into the design of n-type 2D MoS 2 FETs, including their gate leakage (I GL ), subthreshold swing (SS), and ON-current (I ON ), and they can be extended to optimize the design and performance of other 2D FETs. More specifically, we demonstrate that monolayer (1L-) and bilayer (2L-) LaOCl/HfO 2 are promising GD stacks to achieve IRDS required values for I GL , SS, and I ON in n-type 2D FETs. Finally, we develop a framework to derive the design-window in terms of material/interface properties valid for both n-type and p-type 2D FETs and identify potential GD materials as a passivation/seeding layer across different L g for n-type 2D FETs. The results highlight LaOCl as a promising candidate for L g = 7 nm while several materials, including LaOCl and h BN, are viable for L g = 10 nm.
{"title":"A Framework for Exploring Gate-Dielectric Materials for High-Performance Two-Dimensional Field-Effect-Transistors","authors":"Ankit Kumar;Lin Xu;Albert Ho;Arnab Pal;Kunjesh Agashiwala;Kamyar Parto;Wei Cao;Kaustav Banerjee","doi":"10.1109/TMAT.2024.3513236","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3513236","url":null,"abstract":"The choice and engineering of the gate-dielectric (GD) is of paramount importance to the performance and energy-efficiency of two-dimensional (2D) field-effect-transistors (FETs) that are considered to be primary candidates for sub-10 nm gate length (L\u0000<sub>g</sub>\u0000) metal-oxide-semiconductor FETs (MOSFETs). Despite remarkable progress achieved in recent years by the semiconductor-industry towards realization of high-performance 2D FETs based on transition-metal dichalcogenides (TMDs), achieving fast switching speeds and low device leakage currents remain an open challenge. More specifically, the effect of traps at the dielectric-2D interface and bulk defects in the dielectric on device performance have not been thoroughly investigated. In this paper, taking a common 2D-TMD material molybdenum disulfide (MoS\u0000<sub>2</sub>\u0000) as an example, we explore various GDs and dielectric-stacks – their interfaces, traps and defects, by using rigorous ab-initio density-functional-theory (DFT) and non-equilibrium-Green's-function (NEGF) transport. Our framework and analysis provide valuable insights into the design of n-type 2D MoS\u0000<sub>2</sub>\u0000 FETs, including their gate leakage (I\u0000<sub>GL</sub>\u0000), subthreshold swing (SS), and ON-current (I\u0000<sub>ON</sub>\u0000), and they can be extended to optimize the design and performance of other 2D FETs. More specifically, we demonstrate that monolayer (1L-) and bilayer (2L-) LaOCl/HfO\u0000<sub>2</sub>\u0000 are promising GD stacks to achieve IRDS required values for I\u0000<sub>GL</sub>\u0000, SS, and I\u0000<sub>ON</sub>\u0000 in n-type 2D FETs. Finally, we develop a framework to derive the design-window in terms of material/interface properties valid for both n-type and p-type 2D FETs and identify potential GD materials as a passivation/seeding layer across different L\u0000<sub>g</sub>\u0000 for n-type 2D FETs. The results highlight LaOCl as a promising candidate for L\u0000<sub>g</sub>\u0000 = 7 nm while several materials, including LaOCl and \u0000<italic>h</i>\u0000BN, are viable for L\u0000<sub>g</sub>\u0000 = 10 nm.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"211-220"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/TMAT.2024.3469608
{"title":"IEEE Electron Devices Society Information","authors":"","doi":"10.1109/TMAT.2024.3469608","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3469608","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10772478","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/TMAT.2024.3486974
FRANCESCA IACOPI
{"title":"Editorial An Era of Surfaces","authors":"FRANCESCA IACOPI","doi":"10.1109/TMAT.2024.3486974","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3486974","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"iii-iv"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-18DOI: 10.1109/TMAT.2024.3501212
Akrajas Ali Umar;P. Susthita Menon
This paper discusses a specific case regarding how the behavior of the perovskite lattice and the crystallinity properties of the electron transport layer (ETL) impact the photoelectrical dynamics in perovskite solar cells (PSCs). While many factors influence this photovoltaic process, including the properties of the perovskite layer, ETL, hole transport layer (HTL), and the interfacial properties between these components, the fundamental phenomena occurring within each layer are quite similar. By examining the properties of the perovskite layer and ETL, we can gain valuable insights into how they collectively influence the transport of photogenerated carriers in PSCs. This brief review aims to shed light on these key aspects, thus catalyzing efforts to enhance the performance of perovskite solar cells. Understanding the underlying dynamics at play will enable researchers to devise more targeted strategies to optimize PSCs, ultimately realizing their full potential in renewable energy applications.
{"title":"Optoelectrical Dynamic of Perovskite Solar Cells Under Perovskite and Electron Transport Layer Crystallinity Effect","authors":"Akrajas Ali Umar;P. Susthita Menon","doi":"10.1109/TMAT.2024.3501212","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3501212","url":null,"abstract":"This paper discusses a specific case regarding how the behavior of the perovskite lattice and the crystallinity properties of the electron transport layer (ETL) impact the photoelectrical dynamics in perovskite solar cells (PSCs). While many factors influence this photovoltaic process, including the properties of the perovskite layer, ETL, hole transport layer (HTL), and the interfacial properties between these components, the fundamental phenomena occurring within each layer are quite similar. By examining the properties of the perovskite layer and ETL, we can gain valuable insights into how they collectively influence the transport of photogenerated carriers in PSCs. This brief review aims to shed light on these key aspects, thus catalyzing efforts to enhance the performance of perovskite solar cells. Understanding the underlying dynamics at play will enable researchers to devise more targeted strategies to optimize PSCs, ultimately realizing their full potential in renewable energy applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"194-210"},"PeriodicalIF":0.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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