Jing Yi Tee, Mark John, Wei Fu, Thathsara D. Maddumapatabandi, Fabio Bussolotti, Calvin Pei Yu Wong, Kuan Eng Johnson Goh
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Physical Strategies for Geometric Control of Transition Metal Dichalcogenide Atomic Layers by Chemical Vapor Deposition (Adv. Phys. Res. 8/2024)
Chemical Vapor Deposition
In the growth of two-dimensional transition metal dichalcogenide crystals, tuning the mix of physical mechanisms like thermodynamics and kinetics can enable phase engineering and shape control of such crystals for advanced applications. In their review article 2300146, W. Fu, K.E.J. Goh and co-workers provide an updated guidance for exploiting these physical strategies in the technique of chemical vapor deposition.
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