作为惊人的紧凑型成像系统的光刻胶 - 综述

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Micro and Nano Engineering Pub Date : 2024-08-14 DOI:10.1016/j.mne.2024.100280
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引用次数: 0

摘要

光刻技术最一般的目标是在涂在平面上的抗蚀剂薄膜的成像区和非成像区之间以对比的形式传递和记录掩膜或模板信息,考虑到这一点,我们可以认识到三种光刻抗蚀剂成像机制。根据光刻胶膜的性质,这种反差可能是基于光刻胶膜成像部分和非成像部分之间的内在或光诱导或辐射诱导的溶解度差异,分别用于美术平版印刷、光刻和辐射平版印刷;或者是压印平版印刷中由压力驱动的光刻胶流动和封闭;或者是定向自组装平版印刷中由热力学驱动的光刻胶成分相分离。这种对比构成了印刷图像的基础,并最终源于老化学家 "油水不相溶 "法则的基础力量。最重要的是,为了产生这种对比度,抗蚀剂薄膜必须在一个高度非线性的过程中将掩膜或模板的二维图像转化为基底上的三维浮雕图像。通过这种方式产生反差,抗蚀膜就成了一个紧凑的成像系统,可以感测、记录、存储和显示掩膜图像。此外,抗蚀膜必须保持其结构和机械完整性,以 "抵抗 "和承受其他成像后工序(如蚀刻、离子注入、电镀等)的苛刻条件。在完成所有必要的成像后工序后,抗蚀剂薄膜必须剥离或留在最终设备中。一种具有多种功能、可在多个维度上操作的多功能材料不仅令人惊叹,而且还构成了光刻技术不可复制的精髓。通过对光刻抗蚀剂成像所涉及的分子过程进行基础、理论和实验研究,本文阐述了抗蚀剂薄膜是如何实现上述基本功能的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Lithographic resists as amazing compact imaging systems – A review

Considering the goal of lithography under its most general aspect – that is, transferring and recording mask or template information in the form of contrast between the imaged and non-imaged areas of a resist film coated on a flat surface – three lithographic resist imaging mechanisms can be recognized. Depending on the nature of the resist film, this contrast may be based on intrinsic or photo- or radiation-induced differential solubility between the imaged and non-imaged part of the resist film in fine art lithography, photolithography, and radiation lithography, respectively, or pressure driven flow and confinement of resist in imprint lithography, or thermodynamically driven phase separation of resist constituents in directed self-assembly lithography. This contrast forms the basis of the printed image and ultimately derives from the forces that underlie the old chemist's rule: “Oil and water do not mix.” Crucially, to create this contrast, the resist film must transform a two-dimensional image of the mask or template into a three-dimensional relief image on the substrate in a process that is highly non-linear. By creating the contrast in this manner, the resist film serves as a compact imaging system that senses, records, stores, and displays the mask image. Additionally, the resist film must maintain its structural and mechanical integrity to “resist” and withstand the harshness of other post-imaging processes such as etching, ion implantation, electroplating, etc. Following all necessary post-imaging processes, the resist film must be stripped or be left and incorporated into the final device. A versatile material that serves a multiplicity of functions and is operational in many dimensions is not only amazing but also forms the irreducible essence of lithography. By drawing on fundamental, theoretical, and experimental studies of molecular processes involved in lithographic resist imaging, this review paper explains how the resist film performs the above essential functions.

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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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