獐牙菜Ⅲ族单钙镓单层、多层及其 vdW 异质结构的压电性:第一原理计算的启示

IF 2.9 3区 物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-08-15 DOI:10.1016/j.physe.2024.116072
Kai Cheng , Jinke Xu , Peng Wu , Xu Guo , Sandong Guo , Yan Su
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引用次数: 0

摘要

我们利用第一原理计算探讨了 Janus 多层板和基于 Janus 第 III 族单质的 vdW 异质结构的压电特性。计算结果表明,Janus 第 III 族单钙化物多层中存在所有面内和面外压电特性,原子半径差和层内偶极矩会影响 e33/d33 值。对于 vdW 异质结构,e33 值取决于堆叠构型,并随着层间距离的减小而增大。此外,vdW 异质结构的压电效应特性与双轴应变无关。我们对层数和 vdW 集成度如何影响二维材料压电效应的理解,为二维 Janus 单层及其 vdW 异质结构的实验应用提供了理论指导,也将有助于开发具有大功率密度和能量收集能力的稳健的电气-机械耦合系统。
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Piezoelectricity of Janus group-III monochalcogenide monolayers, multilayers and their vdW heterostructures: Insight from first-principles calculations

Using first-principles calculations, we have explored the piezoelectric properties of Janus multilayers and vdW heterostructures based on Janus group-III monochalcogenides. Our calculation results show that all the in-plane and out-of-plane piezoelectricity exists in Janus group-III monochalcogenide multilayers with the atomic radii difference and within intra-layer dipole moments affecting the e33/d33 value. For the vdW heterostructures, the e33 depends on the stacking configuration and increases with the decreasing interlayer distance. Furthermore, the piezoelectric effect properties of the vdW heterostructures are independent of the biaxial strain. Our understanding of how the layer number and vdW integration affect the piezoelectric effect in 2D materials provides theoretical guidance for the experimental application of 2D Janus monolayer and their vdW heterostructures and will also contribute to the development of robust electrical-mechanical-coupled systems with large power densities and energy harvesting capabilities.

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来源期刊
CiteScore
7.30
自引率
6.10%
发文量
356
审稿时长
65 days
期刊介绍: Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures
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