钴催化聚丙烯腈碳化,制备具有高双电层电容的含氮有序介孔碳 CMK-1 电极

IF 4.8 3区 材料科学 Q1 CHEMISTRY, APPLIED Microporous and Mesoporous Materials Pub Date : 2024-08-13 DOI:10.1016/j.micromeso.2024.113294
Daiki Tanaka , Natsumi Takemori , Yoshiki Iba , Kanako Suyama , Shunsuke Shimizu , Takeharu Yoshii , Hirotomo Nishihara , Yoshihiro Kamimura , Yoshihiro Kubota , Satoshi Inagaki
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引用次数: 0

摘要

有序介孔碳 CMK-1 是以聚丙烯腈(PAN)为碳/氮源,通过在载钴介孔二氧化硅 MCM-48 的有序介孔内先在相对较低的温度下碳化(第一步),然后部分石墨化(第二步在较高温度下碳化)制备而成的。碳化的第一步称为 "浸润",所得材料称为 PANinf。在对 PANinf/MCM-48 复合材料进行的高级温度编程解吸分析中,观察到的 HCN 信号温度表明,在 Co 催化剂的作用下,碳化温度从 550°C 降至 450°C。在 Co 催化剂的帮助下,在相对较高的温度下(约 1000 °C),与选择性去除吡啶 N 物种相关的典型 N2 生成量也有所增加,从而导致石墨表面的形成。与不使用催化剂制备的 CMK-1 相比,通过钴催化碳化制备的 CMK-1 在 Et4N+BF4-/ 碳酸丙烯电解质中表现出更高的双层电容和导电率。这也意味着碳质壁内部的石墨化进程。这些结果表明,CMK-1 中石墨畴的边缘平面主要暴露在碳质壁的表面,从而增加了电容测量过程中电解质吸附位点的数量。
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Cobalt-catalyzed carbonization from polyacrylonitrile for preparing nitrogen-containing ordered mesoporous carbon CMK-1 electrode with high electric double-layer capacitance

Ordered mesoporous carbon CMK-1 was prepared via carbonization at a relatively low temperature (the first step) followed by partial graphitization (the second step of carbonization at higher temperature) inside the ordered mesopores of cobalt-loaded mesoporous silica MCM-48 using polyacrylonitrile (PAN) as a carbon/nitrogen source. This first step of the carbonization is called “infusibilization”, and the resultant material is denoted as PANinf. In an advanced temperature-programmed desorption analysis of the PANinf/MCM-48 composite, the temperature of the observed HCN signal indicated that carbonization was reduced from 550 to 450 °C by a Co catalyst. The amount of typical N2 formation associated with the selective removal of pyridinic N species, resulting in the graphitic surface formation, also increased at a relatively high temperature (approximately 1000 °C) with the aid of the Co catalyst. The CMK-1 prepared through cobalt-catalyzed carbonization exhibited a higher electric double-layer capacitance with an Et4N+BF4/propylene carbonate electrolyte, and higher electrical conductivity than CMK-1 prepared without a catalyst. This also implied the progress of graphitization within the carbonaceous wall. These results suggest that the edge planes of the graphitic domains in CMK-1 are predominantly exposed on the surfaces of the carbonaceous walls, resulting in an increase in the number of adsorptive sites for the electrolyte during capacitance measurements.

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来源期刊
Microporous and Mesoporous Materials
Microporous and Mesoporous Materials 化学-材料科学:综合
CiteScore
10.70
自引率
5.80%
发文量
649
审稿时长
26 days
期刊介绍: Microporous and Mesoporous Materials covers novel and significant aspects of porous solids classified as either microporous (pore size up to 2 nm) or mesoporous (pore size 2 to 50 nm). The porosity should have a specific impact on the material properties or application. Typical examples are zeolites and zeolite-like materials, pillared materials, clathrasils and clathrates, carbon molecular sieves, ordered mesoporous materials, organic/inorganic porous hybrid materials, or porous metal oxides. Both natural and synthetic porous materials are within the scope of the journal. Topics which are particularly of interest include: All aspects of natural microporous and mesoporous solids The synthesis of crystalline or amorphous porous materials The physico-chemical characterization of microporous and mesoporous solids, especially spectroscopic and microscopic The modification of microporous and mesoporous solids, for example by ion exchange or solid-state reactions All topics related to diffusion of mobile species in the pores of microporous and mesoporous materials Adsorption (and other separation techniques) using microporous or mesoporous adsorbents Catalysis by microporous and mesoporous materials Host/guest interactions Theoretical chemistry and modelling of host/guest interactions All topics related to the application of microporous and mesoporous materials in industrial catalysis, separation technology, environmental protection, electrochemistry, membranes, sensors, optical devices, etc.
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