晶体取向在锗的阿秒级光注入动力学中的作用。

IF 2.3 2区 物理与天体物理 Q3 CHEMISTRY, PHYSICAL Structural Dynamics-Us Pub Date : 2024-08-19 eCollection Date: 2024-07-01 DOI:10.1063/4.0000253
Nicola Di Palo, Lyudmyla Adamska, Simone Bonetti, Giacomo Inzani, Matteo Talarico, Marta Arias Velasco, Gian Luca Dolso, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Carlo Andrea Rozzi, Matteo Lucchini
{"title":"晶体取向在锗的阿秒级光注入动力学中的作用。","authors":"Nicola Di Palo, Lyudmyla Adamska, Simone Bonetti, Giacomo Inzani, Matteo Talarico, Marta Arias Velasco, Gian Luca Dolso, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Carlo Andrea Rozzi, Matteo Lucchini","doi":"10.1063/4.0000253","DOIUrl":null,"url":null,"abstract":"<p><p>Understanding photoinjection in semiconductors-a fundamental physical process-represents the first step toward devising new opto-electronic devices, capable of operating on unprecedented time scales. Fostered by the development of few-femtosecond, intense infrared pulses, and attosecond spectroscopy techniques, ultrafast charge injection in solids has been the subject of intense theoretical and experimental investigation. Recent results have shown that while under certain conditions photoinjection can be ascribed to a single, well-defined phenomenon, in a realistic multi-band semiconductor like Ge, several competing mechanisms determine the sub-cycle interaction of an intense light field with the atomic and electronic structure of matter. In this latter case, it is yet unclear how the complex balance between the different physical mechanisms is altered by the chosen interaction geometry, dictated by the relative orientation between the crystal lattice and the laser electric field direction. In this work, we investigate ultrafast photoinjection in a Ge monocrystalline sample with attosecond temporal resolution under two distinct orientations. Our combined theoretical and experimental effort suggests that the physical mechanisms determining carrier excitation in Ge are largely robust against crystal rotation. Nevertheless, the different alignment between the laser field and the crystal unit cell causes non-negligible changes in the momentum distribution of the excited carriers and their injection yield. Further experiments are needed to clarify whether the crystal orientation can be used to tune the photoinjection of carriers in a semiconductor at these extreme time scales.</p>","PeriodicalId":48683,"journal":{"name":"Structural Dynamics-Us","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11341128/pdf/","citationCount":"0","resultStr":"{\"title\":\"Role of crystal orientation in attosecond photoinjection dynamics of germanium.\",\"authors\":\"Nicola Di Palo, Lyudmyla Adamska, Simone Bonetti, Giacomo Inzani, Matteo Talarico, Marta Arias Velasco, Gian Luca Dolso, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Carlo Andrea Rozzi, Matteo Lucchini\",\"doi\":\"10.1063/4.0000253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Understanding photoinjection in semiconductors-a fundamental physical process-represents the first step toward devising new opto-electronic devices, capable of operating on unprecedented time scales. Fostered by the development of few-femtosecond, intense infrared pulses, and attosecond spectroscopy techniques, ultrafast charge injection in solids has been the subject of intense theoretical and experimental investigation. Recent results have shown that while under certain conditions photoinjection can be ascribed to a single, well-defined phenomenon, in a realistic multi-band semiconductor like Ge, several competing mechanisms determine the sub-cycle interaction of an intense light field with the atomic and electronic structure of matter. In this latter case, it is yet unclear how the complex balance between the different physical mechanisms is altered by the chosen interaction geometry, dictated by the relative orientation between the crystal lattice and the laser electric field direction. In this work, we investigate ultrafast photoinjection in a Ge monocrystalline sample with attosecond temporal resolution under two distinct orientations. Our combined theoretical and experimental effort suggests that the physical mechanisms determining carrier excitation in Ge are largely robust against crystal rotation. Nevertheless, the different alignment between the laser field and the crystal unit cell causes non-negligible changes in the momentum distribution of the excited carriers and their injection yield. Further experiments are needed to clarify whether the crystal orientation can be used to tune the photoinjection of carriers in a semiconductor at these extreme time scales.</p>\",\"PeriodicalId\":48683,\"journal\":{\"name\":\"Structural Dynamics-Us\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11341128/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Structural Dynamics-Us\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/4.0000253\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/7/1 0:00:00\",\"PubModel\":\"eCollection\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Structural Dynamics-Us","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/4.0000253","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/7/1 0:00:00","PubModel":"eCollection","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

了解半导体中的光注入--一个基本的物理过程--是设计新型光电子器件的第一步,这种器件能够在前所未有的时间尺度上工作。随着几飞秒强红外脉冲和阿秒光谱技术的发展,固体中的超快电荷注入已成为理论和实验研究的热点。最近的研究结果表明,虽然在某些条件下光注入可以归因于一种单一的、定义明确的现象,但在像 Ge 这样的现实多波段半导体中,强光场与物质的原子和电子结构之间的亚周期相互作用是由几种相互竞争的机制决定的。在后一种情况下,目前还不清楚不同物理机制之间的复杂平衡是如何被所选择的相互作用几何形状所改变的,这种几何形状是由晶格与激光电场方向之间的相对取向决定的。在这项工作中,我们以阿秒时间分辨率研究了两种不同取向下 Ge 单晶样品中的超快光注入。我们的理论和实验研究结果表明,决定 Ge 中载流子激发的物理机制在很大程度上不受晶体旋转的影响。尽管如此,激光场与晶体单元之间的不同排列会导致激发载流子的动量分布及其注入产率发生不可忽略的变化。要弄清晶体取向是否可用于调节半导体中载流子在这些极端时间尺度下的光注入,还需要进一步的实验。
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Role of crystal orientation in attosecond photoinjection dynamics of germanium.

Understanding photoinjection in semiconductors-a fundamental physical process-represents the first step toward devising new opto-electronic devices, capable of operating on unprecedented time scales. Fostered by the development of few-femtosecond, intense infrared pulses, and attosecond spectroscopy techniques, ultrafast charge injection in solids has been the subject of intense theoretical and experimental investigation. Recent results have shown that while under certain conditions photoinjection can be ascribed to a single, well-defined phenomenon, in a realistic multi-band semiconductor like Ge, several competing mechanisms determine the sub-cycle interaction of an intense light field with the atomic and electronic structure of matter. In this latter case, it is yet unclear how the complex balance between the different physical mechanisms is altered by the chosen interaction geometry, dictated by the relative orientation between the crystal lattice and the laser electric field direction. In this work, we investigate ultrafast photoinjection in a Ge monocrystalline sample with attosecond temporal resolution under two distinct orientations. Our combined theoretical and experimental effort suggests that the physical mechanisms determining carrier excitation in Ge are largely robust against crystal rotation. Nevertheless, the different alignment between the laser field and the crystal unit cell causes non-negligible changes in the momentum distribution of the excited carriers and their injection yield. Further experiments are needed to clarify whether the crystal orientation can be used to tune the photoinjection of carriers in a semiconductor at these extreme time scales.

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来源期刊
Structural Dynamics-Us
Structural Dynamics-Us CHEMISTRY, PHYSICALPHYSICS, ATOMIC, MOLECU-PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
CiteScore
5.50
自引率
3.60%
发文量
24
审稿时长
16 weeks
期刊介绍: Structural Dynamics focuses on the recent developments in experimental and theoretical methods and techniques that allow a visualization of the electronic and geometric structural changes in real time of chemical, biological, and condensed-matter systems. The community of scientists and engineers working on structural dynamics in such diverse systems often use similar instrumentation and methods. The journal welcomes articles dealing with fundamental problems of electronic and structural dynamics that are tackled by new methods, such as: Time-resolved X-ray and electron diffraction and scattering, Coherent diffractive imaging, Time-resolved X-ray spectroscopies (absorption, emission, resonant inelastic scattering, etc.), Time-resolved electron energy loss spectroscopy (EELS) and electron microscopy, Time-resolved photoelectron spectroscopies (UPS, XPS, ARPES, etc.), Multidimensional spectroscopies in the infrared, the visible and the ultraviolet, Nonlinear spectroscopies in the VUV, the soft and the hard X-ray domains, Theory and computational methods and algorithms for the analysis and description of structuraldynamics and their associated experimental signals. These new methods are enabled by new instrumentation, such as: X-ray free electron lasers, which provide flux, coherence, and time resolution, New sources of ultrashort electron pulses, New sources of ultrashort vacuum ultraviolet (VUV) to hard X-ray pulses, such as high-harmonic generation (HHG) sources or plasma-based sources, New sources of ultrashort infrared and terahertz (THz) radiation, New detectors for X-rays and electrons, New sample handling and delivery schemes, New computational capabilities.
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