Su Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, Chang Goo Kang
{"title":"具有埋入式局部后栅结构的 MoS2 场效应晶体管中伽马射线辐射诱发的电气特性变化。","authors":"Su Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, Chang Goo Kang","doi":"10.3390/nano14161324","DOIUrl":null,"url":null,"abstract":"<p><p>The impact of radiation on MoS<sub>2</sub>-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS<sub>2</sub> field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al<sub>2</sub>O<sub>3</sub> gate dielectrics and MoS<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al<sub>2</sub>O<sub>3</sub> dielectric interface near the MoS<sub>2</sub> side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS<sub>2</sub> channel/dielectric interface.</p>","PeriodicalId":18966,"journal":{"name":"Nanomaterials","volume":null,"pages":null},"PeriodicalIF":4.4000,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11357049/pdf/","citationCount":"0","resultStr":"{\"title\":\"Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS<sub>2</sub> Field-Effect Transistors with Buried Local Back-Gate Structure.\",\"authors\":\"Su Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, Chang Goo Kang\",\"doi\":\"10.3390/nano14161324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The impact of radiation on MoS<sub>2</sub>-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS<sub>2</sub> field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al<sub>2</sub>O<sub>3</sub> gate dielectrics and MoS<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al<sub>2</sub>O<sub>3</sub> dielectric interface near the MoS<sub>2</sub> side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS<sub>2</sub> channel/dielectric interface.</p>\",\"PeriodicalId\":18966,\"journal\":{\"name\":\"Nanomaterials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2024-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11357049/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanomaterials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3390/nano14161324\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/nano14161324","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure.
The impact of radiation on MoS2-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS2 field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al2O3 gate dielectrics and MoS2/Al2O3 interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al2O3 dielectric interface near the MoS2 side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS2 channel/dielectric interface.
期刊介绍：
Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.
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