{"title":"具有数字输出和内置能量收集电路的光伏发电温度传感芯片","authors":"Yen-Ju Lin;Jian-Zhou Yan;Kai-Min Chang;Chia-Ling Wei","doi":"10.1109/LSENS.2024.3443274","DOIUrl":null,"url":null,"abstract":"In this letter, a temperature-sensing chip with a built-in photovoltaic (PV) energy harvesting circuit is proposed. The temperature-sensing circuit includes a bipolar-junction-transistor (BJT)-based sensing circuit, a gain stage, and a successive approximation register (SAR) analog-to-digital converter (ADC), while the energy harvesting circuit is a boost dc–dc converter with a perturbation-and-observation maximum power point tracking circuit. The main goal of this work is successful chip integration. To the best of our knowledge, this is the first chip that integrates a temperature sensor, an ADC, an energy harvesting circuit, a clock generator, and other related circuits into a single chip. While conventional temperature-sensing chips are typically powered by a stable power supply voltage (which may not be available in Internet of Things devices), the proposed chip is powered by the built-in boost converter, whose output voltage inevitably has ripples. Despite this, the performance of our temperature-sensing chip is excellent. In addition, the built-in clock generator can generate signals with a subhertz frequency, which is difficult to achieve with low-power requirements. The chip was fabricated using the TSMC 0.18-μm 1P6M mixed-signal process. The measured results indicate that the sensed temperature of the proposed chip ranges from –20 °C to 80 °C with 0.17 °C resolution. The error is within ±0.8 °C, and \n<italic>R</i>\n<sup>2</sup>\n representing linearity reaches 0.99988.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photovoltaic-Energy-Powered Temperature-Sensing Chip With Digital Output and Built-in Energy Harvesting Circuit\",\"authors\":\"Yen-Ju Lin;Jian-Zhou Yan;Kai-Min Chang;Chia-Ling Wei\",\"doi\":\"10.1109/LSENS.2024.3443274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a temperature-sensing chip with a built-in photovoltaic (PV) energy harvesting circuit is proposed. The temperature-sensing circuit includes a bipolar-junction-transistor (BJT)-based sensing circuit, a gain stage, and a successive approximation register (SAR) analog-to-digital converter (ADC), while the energy harvesting circuit is a boost dc–dc converter with a perturbation-and-observation maximum power point tracking circuit. The main goal of this work is successful chip integration. To the best of our knowledge, this is the first chip that integrates a temperature sensor, an ADC, an energy harvesting circuit, a clock generator, and other related circuits into a single chip. While conventional temperature-sensing chips are typically powered by a stable power supply voltage (which may not be available in Internet of Things devices), the proposed chip is powered by the built-in boost converter, whose output voltage inevitably has ripples. Despite this, the performance of our temperature-sensing chip is excellent. In addition, the built-in clock generator can generate signals with a subhertz frequency, which is difficult to achieve with low-power requirements. The chip was fabricated using the TSMC 0.18-μm 1P6M mixed-signal process. The measured results indicate that the sensed temperature of the proposed chip ranges from –20 °C to 80 °C with 0.17 °C resolution. The error is within ±0.8 °C, and \\n<italic>R</i>\\n<sup>2</sup>\\n representing linearity reaches 0.99988.\",\"PeriodicalId\":13014,\"journal\":{\"name\":\"IEEE Sensors Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10636304/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10636304/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Photovoltaic-Energy-Powered Temperature-Sensing Chip With Digital Output and Built-in Energy Harvesting Circuit
In this letter, a temperature-sensing chip with a built-in photovoltaic (PV) energy harvesting circuit is proposed. The temperature-sensing circuit includes a bipolar-junction-transistor (BJT)-based sensing circuit, a gain stage, and a successive approximation register (SAR) analog-to-digital converter (ADC), while the energy harvesting circuit is a boost dc–dc converter with a perturbation-and-observation maximum power point tracking circuit. The main goal of this work is successful chip integration. To the best of our knowledge, this is the first chip that integrates a temperature sensor, an ADC, an energy harvesting circuit, a clock generator, and other related circuits into a single chip. While conventional temperature-sensing chips are typically powered by a stable power supply voltage (which may not be available in Internet of Things devices), the proposed chip is powered by the built-in boost converter, whose output voltage inevitably has ripples. Despite this, the performance of our temperature-sensing chip is excellent. In addition, the built-in clock generator can generate signals with a subhertz frequency, which is difficult to achieve with low-power requirements. The chip was fabricated using the TSMC 0.18-μm 1P6M mixed-signal process. The measured results indicate that the sensed temperature of the proposed chip ranges from –20 °C to 80 °C with 0.17 °C resolution. The error is within ±0.8 °C, and
R
2
representing linearity reaches 0.99988.